JPH057249Y2 - - Google Patents
Info
- Publication number
- JPH057249Y2 JPH057249Y2 JP11551485U JP11551485U JPH057249Y2 JP H057249 Y2 JPH057249 Y2 JP H057249Y2 JP 11551485 U JP11551485 U JP 11551485U JP 11551485 U JP11551485 U JP 11551485U JP H057249 Y2 JPH057249 Y2 JP H057249Y2
- Authority
- JP
- Japan
- Prior art keywords
- shutter plate
- particles
- tip
- container
- forming apparatus
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000002245 particle Substances 0.000 claims description 30
- 230000005484 gravity Effects 0.000 claims description 5
- 239000000758 substrate Substances 0.000 claims description 5
- 230000001154 acute effect Effects 0.000 claims description 4
- 230000015572 biosynthetic process Effects 0.000 claims description 2
- 239000012528 membrane Substances 0.000 claims 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 6
- 229910052733 gallium Inorganic materials 0.000 description 6
- 230000000694 effects Effects 0.000 description 4
- 229910052785 arsenic Inorganic materials 0.000 description 3
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 238000010792 warming Methods 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11551485U JPH057249Y2 (fr) | 1985-07-27 | 1985-07-27 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11551485U JPH057249Y2 (fr) | 1985-07-27 | 1985-07-27 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6223871U JPS6223871U (fr) | 1987-02-13 |
| JPH057249Y2 true JPH057249Y2 (fr) | 1993-02-24 |
Family
ID=30999236
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11551485U Expired - Lifetime JPH057249Y2 (fr) | 1985-07-27 | 1985-07-27 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH057249Y2 (fr) |
-
1985
- 1985-07-27 JP JP11551485U patent/JPH057249Y2/ja not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6223871U (fr) | 1987-02-13 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2007518874A (ja) | 真空蒸着方法、及び真空蒸着用密封型蒸発源装置 | |
| JPH057249Y2 (fr) | ||
| EP0735157A2 (fr) | Production de vapeur de magnésium par vaporisation à haute vitesse | |
| JPS6352111B2 (fr) | ||
| US5366552A (en) | Apparatus for liquid-phase epitaxial growth | |
| JP3588783B2 (ja) | 真空蒸着用材料供給装置 | |
| JPH0238923Y2 (fr) | ||
| JPH0516399B2 (fr) | ||
| JPH04272169A (ja) | 含浸型真空蒸着装置 | |
| JP2526036B2 (ja) | 分子線エピタキシヤル装置のシヤツタ構造 | |
| JPH0798861A (ja) | 磁気記録媒体の製造装置 | |
| JPS63235466A (ja) | 蒸着法 | |
| JP2672680B2 (ja) | 薄膜の製造方法及びこれに用いる蒸発源 | |
| JPH05287513A (ja) | イオンプレーティング装置 | |
| JPH0527501Y2 (fr) | ||
| JP2001115254A (ja) | 蒸着装置および蒸着材料擦り切り装置並びに蒸着材料供給装置 | |
| JP2024049963A (ja) | 蒸着方法および蒸着用容器 | |
| JPH02197564A (ja) | 真空蒸着装置 | |
| JPH0360913B2 (fr) | ||
| JPS6179765A (ja) | レ−ザ蒸着装置 | |
| JPH03197668A (ja) | 蒸発源およびそれを用いた蒸発装置 | |
| JPH0665465U (ja) | 蒸着装置 | |
| JPS5945994A (ja) | 分子線エピタキシヤル成長用るつぼ | |
| JP2825974B2 (ja) | 分子線源容器 | |
| JPH04111730U (ja) | 分子線エピタキシイ装置 |