JPH0572108B2 - - Google Patents

Info

Publication number
JPH0572108B2
JPH0572108B2 JP57156253A JP15625382A JPH0572108B2 JP H0572108 B2 JPH0572108 B2 JP H0572108B2 JP 57156253 A JP57156253 A JP 57156253A JP 15625382 A JP15625382 A JP 15625382A JP H0572108 B2 JPH0572108 B2 JP H0572108B2
Authority
JP
Japan
Prior art keywords
collector
base
transistor
layer
transistors
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP57156253A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5944864A (ja
Inventor
Tadashi Hirao
Makoto Hirayama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP57156253A priority Critical patent/JPS5944864A/ja
Publication of JPS5944864A publication Critical patent/JPS5944864A/ja
Publication of JPH0572108B2 publication Critical patent/JPH0572108B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/65—Integrated injection logic

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Bipolar Integrated Circuits (AREA)
JP57156253A 1982-09-06 1982-09-06 半導体集積回路装置 Granted JPS5944864A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57156253A JPS5944864A (ja) 1982-09-06 1982-09-06 半導体集積回路装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57156253A JPS5944864A (ja) 1982-09-06 1982-09-06 半導体集積回路装置

Publications (2)

Publication Number Publication Date
JPS5944864A JPS5944864A (ja) 1984-03-13
JPH0572108B2 true JPH0572108B2 (cg-RX-API-DMAC7.html) 1993-10-08

Family

ID=15623738

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57156253A Granted JPS5944864A (ja) 1982-09-06 1982-09-06 半導体集積回路装置

Country Status (1)

Country Link
JP (1) JPS5944864A (cg-RX-API-DMAC7.html)

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5466784A (en) * 1977-11-08 1979-05-29 Toshiba Corp Semiconductor integrated circuit device
JPS5693362A (en) * 1979-12-26 1981-07-28 Mitsubishi Electric Corp Manufacture of semiconductor ic device

Also Published As

Publication number Publication date
JPS5944864A (ja) 1984-03-13

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