JPH0571129B2 - - Google Patents
Info
- Publication number
- JPH0571129B2 JPH0571129B2 JP16285A JP16285A JPH0571129B2 JP H0571129 B2 JPH0571129 B2 JP H0571129B2 JP 16285 A JP16285 A JP 16285A JP 16285 A JP16285 A JP 16285A JP H0571129 B2 JPH0571129 B2 JP H0571129B2
- Authority
- JP
- Japan
- Prior art keywords
- mask material
- etching
- groove
- silicon
- layer mask
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000000463 material Substances 0.000 claims description 59
- 238000005530 etching Methods 0.000 claims description 41
- 238000000034 method Methods 0.000 claims description 30
- 239000000758 substrate Substances 0.000 claims description 29
- 238000001020 plasma etching Methods 0.000 claims description 8
- 239000004065 semiconductor Substances 0.000 claims description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 7
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 7
- 238000004519 manufacturing process Methods 0.000 claims description 6
- 229910052751 metal Inorganic materials 0.000 claims description 2
- 239000002184 metal Substances 0.000 claims description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 47
- 229910052710 silicon Inorganic materials 0.000 description 47
- 239000010703 silicon Substances 0.000 description 47
- 239000010410 layer Substances 0.000 description 25
- 238000002955 isolation Methods 0.000 description 7
- 150000002500 ions Chemical class 0.000 description 6
- 229910004298 SiO 2 Inorganic materials 0.000 description 5
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 4
- 229910052750 molybdenum Inorganic materials 0.000 description 4
- 239000011733 molybdenum Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 230000010354 integration Effects 0.000 description 2
- 238000006116 polymerization reaction Methods 0.000 description 2
- 239000012495 reaction gas Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- IRPGOXJVTQTAAN-UHFFFAOYSA-N 2,2,3,3,3-pentafluoropropanal Chemical compound FC(F)(F)C(F)(F)C=O IRPGOXJVTQTAAN-UHFFFAOYSA-N 0.000 description 1
- KLZUFWVZNOTSEM-UHFFFAOYSA-K Aluminum fluoride Inorganic materials F[Al](F)F KLZUFWVZNOTSEM-UHFFFAOYSA-K 0.000 description 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 229960002050 hydrofluoric acid Drugs 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Drying Of Semiconductors (AREA)
- Element Separation (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16285A JPS61159737A (ja) | 1985-01-07 | 1985-01-07 | 半導体装置の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16285A JPS61159737A (ja) | 1985-01-07 | 1985-01-07 | 半導体装置の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61159737A JPS61159737A (ja) | 1986-07-19 |
| JPH0571129B2 true JPH0571129B2 (enrdf_load_stackoverflow) | 1993-10-06 |
Family
ID=11466340
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16285A Granted JPS61159737A (ja) | 1985-01-07 | 1985-01-07 | 半導体装置の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61159737A (enrdf_load_stackoverflow) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP4361620A1 (en) | 2022-10-28 | 2024-05-01 | ARKRAY, Inc. | Method for analyzing sample comprising hemoglobin a2 by capillary electrophoresis |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0407077A3 (en) * | 1989-07-03 | 1992-12-30 | American Telephone And Telegraph Company | Trench etching in an integrated-circuit semiconductor device |
| JPH07326659A (ja) * | 1994-06-02 | 1995-12-12 | Hitachi Ltd | 半導体集積回路装置の製造方法 |
| JP7328276B2 (ja) | 2021-05-27 | 2023-08-16 | 京セラ株式会社 | 非相反性導波路、アイソレータ、光スイッチ、光送受信機、データセンタ、及び製造方法 |
-
1985
- 1985-01-07 JP JP16285A patent/JPS61159737A/ja active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP4361620A1 (en) | 2022-10-28 | 2024-05-01 | ARKRAY, Inc. | Method for analyzing sample comprising hemoglobin a2 by capillary electrophoresis |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS61159737A (ja) | 1986-07-19 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US6284666B1 (en) | Method of reducing RIE lag for deep trench silicon etching | |
| KR100320830B1 (ko) | 다층 구조의 실리콘 질화물 층에서 트렌치를 이방적으로에칭하는 프로세스 및 조성물과 금속 산화물 반도체 전계효과 트랜지스터를 형성하는 프로세스 | |
| US5629237A (en) | Taper etching without re-entrance profile | |
| EP0335459A2 (en) | Electrical connections for electronic devices | |
| US5960318A (en) | Borderless contact etch process with sidewall spacer and selective isotropic etch process | |
| JPS6242445A (ja) | 集積回路の製造方法 | |
| JPH06163478A (ja) | 半導体のドライエッチング方法 | |
| JPH06216230A (ja) | Ｓｏｉウエハ上のトレンチ構造及び製造方法 | |
| JPH10335444A (ja) | 半導体装置の製造方法 | |
| US5384281A (en) | Non-conformal and oxidizable etch stops for submicron features | |
| EP0369953B1 (en) | Tapering of holes through dielectric layers for forming contacts in integrated devices | |
| JPH11135489A (ja) | 半導体のエッチング方法 | |
| JPH0571129B2 (enrdf_load_stackoverflow) | ||
| JPH0680650B2 (ja) | 半導体集積回路装置の製造方法 | |
| JPH0214548A (ja) | 半導体装置およびその製造方法 | |
| JPH05283407A (ja) | 半導体装置の製造方法 | |
| JPH0422021B2 (enrdf_load_stackoverflow) | ||
| EP0496169A1 (en) | Method of integrated circuit fabrication including filling windows with conducting material | |
| JPS6187337A (ja) | 半導体装置の製造方法 | |
| JP3550276B2 (ja) | 半導体装置の製造方法 | |
| KR100478488B1 (ko) | 반도체 소자 및 그 제조 방법 | |
| KR100275501B1 (ko) | 트렌치 형성 방법 | |
| JP3395719B2 (ja) | 半導体装置の製造方法 | |
| JPS63289936A (ja) | 溝パタン形成法 | |
| JPS62282457A (ja) | 溝型コンデンサーを有する集積回路 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |