JPH0567597B2 - - Google Patents
Info
- Publication number
- JPH0567597B2 JPH0567597B2 JP15216988A JP15216988A JPH0567597B2 JP H0567597 B2 JPH0567597 B2 JP H0567597B2 JP 15216988 A JP15216988 A JP 15216988A JP 15216988 A JP15216988 A JP 15216988A JP H0567597 B2 JPH0567597 B2 JP H0567597B2
- Authority
- JP
- Japan
- Prior art keywords
- vapor pressure
- crystal growth
- chamber
- temperature
- pressure control
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000013078 crystal Substances 0.000 claims description 81
- 239000003708 ampul Substances 0.000 description 13
- 229910007709 ZnTe Inorganic materials 0.000 description 12
- 239000010453 quartz Substances 0.000 description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 10
- 150000001875 compounds Chemical class 0.000 description 8
- 239000000463 material Substances 0.000 description 7
- 239000002904 solvent Substances 0.000 description 7
- 125000006850 spacer group Chemical group 0.000 description 6
- 238000000926 separation method Methods 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000007791 liquid phase Substances 0.000 description 3
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 238000005136 cathodoluminescence Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 238000010574 gas phase reaction Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 239000007790 solid phase Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15216988A JPH01320287A (ja) | 1988-06-22 | 1988-06-22 | 結晶成長装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15216988A JPH01320287A (ja) | 1988-06-22 | 1988-06-22 | 結晶成長装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH01320287A JPH01320287A (ja) | 1989-12-26 |
| JPH0567597B2 true JPH0567597B2 (de) | 1993-09-27 |
Family
ID=15534544
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15216988A Granted JPH01320287A (ja) | 1988-06-22 | 1988-06-22 | 結晶成長装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01320287A (de) |
-
1988
- 1988-06-22 JP JP15216988A patent/JPH01320287A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPH01320287A (ja) | 1989-12-26 |
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