JPH0565065B2 - - Google Patents
Info
- Publication number
- JPH0565065B2 JPH0565065B2 JP22737586A JP22737586A JPH0565065B2 JP H0565065 B2 JPH0565065 B2 JP H0565065B2 JP 22737586 A JP22737586 A JP 22737586A JP 22737586 A JP22737586 A JP 22737586A JP H0565065 B2 JPH0565065 B2 JP H0565065B2
- Authority
- JP
- Japan
- Prior art keywords
- epitaxial layer
- hole
- hollow chamber
- oxide film
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000000758 substrate Substances 0.000 claims description 26
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 24
- 229910052710 silicon Inorganic materials 0.000 claims description 24
- 239000010703 silicon Substances 0.000 claims description 24
- 238000000034 method Methods 0.000 claims description 23
- 239000013078 crystal Substances 0.000 claims description 15
- 238000004519 manufacturing process Methods 0.000 claims description 8
- 238000005530 etching Methods 0.000 claims description 7
- 238000007789 sealing Methods 0.000 claims description 4
- 238000004544 sputter deposition Methods 0.000 claims description 3
- 238000007740 vapor deposition Methods 0.000 claims description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 239000012535 impurity Substances 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 239000011796 hollow space material Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Pressure Sensors (AREA)
- Weting (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP22737586A JPS6381983A (ja) | 1986-09-26 | 1986-09-26 | 微細中空室の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP22737586A JPS6381983A (ja) | 1986-09-26 | 1986-09-26 | 微細中空室の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6381983A JPS6381983A (ja) | 1988-04-12 |
| JPH0565065B2 true JPH0565065B2 (enrdf_load_stackoverflow) | 1993-09-16 |
Family
ID=16859821
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP22737586A Granted JPS6381983A (ja) | 1986-09-26 | 1986-09-26 | 微細中空室の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6381983A (enrdf_load_stackoverflow) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3093487B2 (ja) * | 1992-10-28 | 2000-10-03 | 松下電子工業株式会社 | 半導体装置およびその製造方法 |
| JP4512186B2 (ja) * | 2004-06-30 | 2010-07-28 | 京セラキンセキ株式会社 | 圧電振動子の製造方法 |
-
1986
- 1986-09-26 JP JP22737586A patent/JPS6381983A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6381983A (ja) | 1988-04-12 |
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