JPH0565065B2 - - Google Patents
Info
- Publication number
- JPH0565065B2 JPH0565065B2 JP22737586A JP22737586A JPH0565065B2 JP H0565065 B2 JPH0565065 B2 JP H0565065B2 JP 22737586 A JP22737586 A JP 22737586A JP 22737586 A JP22737586 A JP 22737586A JP H0565065 B2 JPH0565065 B2 JP H0565065B2
- Authority
- JP
- Japan
- Prior art keywords
- epitaxial layer
- hole
- hollow chamber
- oxide film
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Landscapes
- Weting (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Pressure Sensors (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP22737586A JPS6381983A (ja) | 1986-09-26 | 1986-09-26 | 微細中空室の製造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP22737586A JPS6381983A (ja) | 1986-09-26 | 1986-09-26 | 微細中空室の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS6381983A JPS6381983A (ja) | 1988-04-12 |
JPH0565065B2 true JPH0565065B2 (enrdf_load_html_response) | 1993-09-16 |
Family
ID=16859821
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP22737586A Granted JPS6381983A (ja) | 1986-09-26 | 1986-09-26 | 微細中空室の製造方法 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6381983A (enrdf_load_html_response) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3093487B2 (ja) * | 1992-10-28 | 2000-10-03 | 松下電子工業株式会社 | 半導体装置およびその製造方法 |
JP4512186B2 (ja) * | 2004-06-30 | 2010-07-28 | 京セラキンセキ株式会社 | 圧電振動子の製造方法 |
-
1986
- 1986-09-26 JP JP22737586A patent/JPS6381983A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS6381983A (ja) | 1988-04-12 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US5672551A (en) | Method for manufacturing a semiconductor pressure sensor with single-crystal silicon diaphragm and single-crystal gage elements | |
US20100255662A1 (en) | Method for producing polycrystalline silicon germanium suitable for micromachining | |
US6689669B2 (en) | High temperature sensors utilizing doping controlled, dielectrically isolated beta silicon carbide (SiC) sensing elements on a specifically selected high temperature force collecting membrane | |
JPH07111956B2 (ja) | エピタキシアル・シリコン膜 | |
US5946549A (en) | Method for manufacturing sensor using semiconductor | |
JPH0565065B2 (enrdf_load_html_response) | ||
US20020179563A1 (en) | Application of a strain-compensated heavily doped etch stop for silicon structure formation | |
JPH06302834A (ja) | 薄膜構造の製造方法 | |
JPS6376484A (ja) | 半導体圧力センサの製造方法 | |
JP2541184B2 (ja) | 圧力・電気変換装置の製造方法 | |
US20080213981A1 (en) | Method of Fabricating a Silicon-On-Insulator Structure | |
JPS60193379A (ja) | 低抵抗単結晶領域形成方法 | |
JP3775629B2 (ja) | 半導体圧力センサ及びその製造方法 | |
JPS62283679A (ja) | 半導体圧力センサの製造方法 | |
JPH0114714B2 (enrdf_load_html_response) | ||
JPS60121737A (ja) | 半導体装置の素子分離方法 | |
JPH01258439A (ja) | 半導体装置およびその製造方法 | |
JPH02205363A (ja) | 半導体圧力センサ | |
JPH0468575B2 (enrdf_load_html_response) | ||
CN120024866A (zh) | 用于无支撑地布置的硅结构的应力补偿方法、半导体元件和传感器 | |
JPS59167028A (ja) | 化合物半導体集積回路装置の製造方法 | |
US5382823A (en) | Semiconductor device and method for production thereof | |
JP3055508B2 (ja) | 圧力検出器の製造方法 | |
JPH0519088B2 (enrdf_load_html_response) | ||
JPH09304207A (ja) | 圧力センサ |