JPH0563439B2 - - Google Patents
Info
- Publication number
- JPH0563439B2 JPH0563439B2 JP17968484A JP17968484A JPH0563439B2 JP H0563439 B2 JPH0563439 B2 JP H0563439B2 JP 17968484 A JP17968484 A JP 17968484A JP 17968484 A JP17968484 A JP 17968484A JP H0563439 B2 JPH0563439 B2 JP H0563439B2
- Authority
- JP
- Japan
- Prior art keywords
- amorphous silicon
- single crystal
- thin film
- silicon
- doped
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000010408 film Substances 0.000 claims description 30
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 28
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 22
- 239000013078 crystal Substances 0.000 claims description 22
- 229910052710 silicon Inorganic materials 0.000 claims description 22
- 239000010703 silicon Substances 0.000 claims description 22
- 239000012535 impurity Substances 0.000 claims description 18
- 238000000034 method Methods 0.000 claims description 18
- 239000000758 substrate Substances 0.000 claims description 17
- 239000010409 thin film Substances 0.000 claims description 16
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 9
- 239000007790 solid phase Substances 0.000 claims description 8
- 238000004519 manufacturing process Methods 0.000 claims description 7
- 238000005530 etching Methods 0.000 claims description 4
- 238000010438 heat treatment Methods 0.000 claims description 3
- 239000002344 surface layer Substances 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 20
- 238000002425 crystallisation Methods 0.000 description 12
- 230000008025 crystallization Effects 0.000 description 12
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 6
- 229910052698 phosphorus Inorganic materials 0.000 description 6
- 239000011574 phosphorus Substances 0.000 description 6
- 238000007796 conventional method Methods 0.000 description 5
- 239000002019 doping agent Substances 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000006911 nucleation Effects 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17968484A JPS6158879A (ja) | 1984-08-29 | 1984-08-29 | シリコン薄膜結晶の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17968484A JPS6158879A (ja) | 1984-08-29 | 1984-08-29 | シリコン薄膜結晶の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6158879A JPS6158879A (ja) | 1986-03-26 |
| JPH0563439B2 true JPH0563439B2 (de) | 1993-09-10 |
Family
ID=16070060
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP17968484A Granted JPS6158879A (ja) | 1984-08-29 | 1984-08-29 | シリコン薄膜結晶の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6158879A (de) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2698147B2 (ja) * | 1989-02-10 | 1998-01-19 | 三洋電機株式会社 | Ｓｏｉ構造の形成方法 |
| JP2762097B2 (ja) * | 1989-02-20 | 1998-06-04 | 三洋電機株式会社 | Ｓｏｉ膜の形成方法 |
| JP2762103B2 (ja) * | 1989-03-20 | 1998-06-04 | 三洋電機株式会社 | Ｓｏｉ膜の形成方法 |
| FR2646860B1 (fr) * | 1989-05-15 | 1996-07-19 | Sanyo Electric Co | Procede pour la formation d'une structure soi |
| US6413805B1 (en) | 1993-03-12 | 2002-07-02 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device forming method |
| US5663077A (en) | 1993-07-27 | 1997-09-02 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing a thin film transistor in which the gate insulator comprises two oxide films |
| JP3221473B2 (ja) | 1994-02-03 | 2001-10-22 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| JP2007329200A (ja) * | 2006-06-06 | 2007-12-20 | Toshiba Corp | 半導体装置の製造方法 |
| JP2013258188A (ja) * | 2012-06-11 | 2013-12-26 | Hitachi Kokusai Electric Inc | 基板処理方法と半導体装置の製造方法、および基板処理装置 |
-
1984
- 1984-08-29 JP JP17968484A patent/JPS6158879A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6158879A (ja) | 1986-03-26 |
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