JPH0562452B2 - - Google Patents

Info

Publication number
JPH0562452B2
JPH0562452B2 JP59224260A JP22426084A JPH0562452B2 JP H0562452 B2 JPH0562452 B2 JP H0562452B2 JP 59224260 A JP59224260 A JP 59224260A JP 22426084 A JP22426084 A JP 22426084A JP H0562452 B2 JPH0562452 B2 JP H0562452B2
Authority
JP
Japan
Prior art keywords
layer
growth
substrate
growth method
growing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP59224260A
Other languages
English (en)
Japanese (ja)
Other versions
JPS60111412A (ja
Inventor
Kondoru Biin Jon
Seshiru Fuerudoman Reonaado
Toomasu Fuiorii Ansonii
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
American Telephone and Telegraph Co Inc
AT&T Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by American Telephone and Telegraph Co Inc, AT&T Corp filed Critical American Telephone and Telegraph Co Inc
Publication of JPS60111412A publication Critical patent/JPS60111412A/ja
Publication of JPH0562452B2 publication Critical patent/JPH0562452B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/82—Heterojunctions
    • H10D62/822—Heterojunctions comprising only Group IV materials heterojunctions, e.g. Si/Ge heterojunctions
    • H10P14/22—
    • H10P14/2905—
    • H10P14/3211—
    • H10P14/3248—
    • H10P14/3411—
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/025—Deposition multi-step
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/072—Heterojunctions
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/169—Vacuum deposition, e.g. including molecular beam epitaxy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/938—Lattice strain control or utilization

Landscapes

  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Recrystallisation Techniques (AREA)
JP59224260A 1983-10-28 1984-10-26 Ｇｅ／Ｓｉ半導体異種構造の成長法 Granted JPS60111412A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US06/546,736 US4529455A (en) 1983-10-28 1983-10-28 Method for epitaxially growing Gex Si1-x layers on Si utilizing molecular beam epitaxy
US546736 1983-10-28

Publications (2)

Publication Number Publication Date
JPS60111412A JPS60111412A (ja) 1985-06-17
JPH0562452B2 true JPH0562452B2 (enExample) 1993-09-08

Family

ID=24181785

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59224260A Granted JPS60111412A (ja) 1983-10-28 1984-10-26 Ｇｅ／Ｓｉ半導体異種構造の成長法

Country Status (2)

Country Link
US (1) US4529455A (enExample)
JP (1) JPS60111412A (enExample)

Families Citing this family (50)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4707197A (en) * 1984-08-02 1987-11-17 American Telephone And Telegraph Company, At&T Bell Laboratories Method of producing a silicide/Si heteroepitaxial structure, and articles produced by the method
US4855013A (en) * 1984-08-13 1989-08-08 Agency Of Industrial Science And Technology Method for controlling the thickness of a thin crystal film
JPS61107719A (ja) * 1984-10-31 1986-05-26 Matsushita Electric Ind Co Ltd ３−５化合物単結晶薄膜をそなえたＳｉ基板およびその製造方法
DE3442460A1 (de) * 1984-11-22 1986-05-28 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Verfahren zur dotierung von halbleitermaterial
US4879256A (en) * 1985-06-05 1989-11-07 At&T Bell Laboratories Method of controlling the order-disorder state in a semiconductor device
US4843439A (en) * 1985-08-28 1989-06-27 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Tailorable infrared sensing device with strain layer superlattice structure
US4725870A (en) * 1985-11-18 1988-02-16 American Telephone And Telegraph Company, At&T Bell Laboratories Silicon germanium photodetector
CA1282671C (en) * 1985-11-18 1991-04-09 John Condon Bean Device having strain induced region
DE3542482A1 (de) * 1985-11-30 1987-06-04 Licentia Gmbh Modulationsdotierter feldeffekttransistor
US4871690A (en) * 1986-01-21 1989-10-03 Xerox Corporation Semiconductor structures utilizing semiconductor support means selectively pretreated with migratory defects
US5326716A (en) * 1986-02-11 1994-07-05 Max Planck-Gesellschaft Zur Foerderung Der Wissenschaften E.V. Liquid phase epitaxial process for producing three-dimensional semiconductor structures by liquid phase expitaxy
US4711857A (en) * 1986-08-28 1987-12-08 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Tailorable infrared sensing device with strain layer superlattice structure
DE3725214A1 (de) * 1986-09-27 1988-03-31 Licentia Gmbh Impatt-diode
US4769341A (en) * 1986-12-29 1988-09-06 American Telephone And Telegraph Company, At&T Bell Laboratories Method of fabricating non-silicon materials on silicon substrate using an alloy of Sb and Group IV semiconductors
GB8708926D0 (en) * 1987-04-14 1987-05-20 British Telecomm Bipolar transistor
JPS63285923A (ja) * 1987-05-19 1988-11-22 Komatsu Denshi Kinzoku Kk シリコン−ゲルマニウム合金の製造方法
US4996649A (en) * 1987-08-11 1991-02-26 Minolta Camera Kabushiki Kaisha Image processor capable of storing character images and graphic images in a memory and including a timer for ensuring image processing operations are carried out in a predetermined time period
US4982263A (en) * 1987-12-21 1991-01-01 Texas Instruments Incorporated Anodizable strain layer for SOI semiconductor structures
US4849370A (en) * 1987-12-21 1989-07-18 Texas Instruments Incorporated Anodizable strain layer for SOI semiconductor structures
JP2740029B2 (ja) * 1987-12-23 1998-04-15 ブリテツシユ・テレコミユニケイシヨンズ・パブリツク・リミテツド・カンパニー 半導体ヘテロ構造
US4962051A (en) * 1988-11-18 1990-10-09 Motorola, Inc. Method of forming a defect-free semiconductor layer on insulator
US5084411A (en) * 1988-11-29 1992-01-28 Hewlett-Packard Company Semiconductor processing with silicon cap over Si1-x Gex Film
US5256550A (en) * 1988-11-29 1993-10-26 Hewlett-Packard Company Fabricating a semiconductor device with strained Si1-x Gex layer
US5241197A (en) * 1989-01-25 1993-08-31 Hitachi, Ltd. Transistor provided with strained germanium layer
EP0380077A3 (en) * 1989-01-25 1990-09-12 Hitachi, Ltd. Transistor provided with strained germanium layer
GB8905511D0 (en) * 1989-03-10 1989-04-19 British Telecomm Preparing substrates
US5019882A (en) * 1989-05-15 1991-05-28 International Business Machines Corporation Germanium channel silicon MOSFET
US5202284A (en) * 1989-12-01 1993-04-13 Hewlett-Packard Company Selective and non-selective deposition of Si1-x Gex on a Si subsrate that is partially masked with SiO2
US4975387A (en) * 1989-12-15 1990-12-04 The United States Of America As Represented By The Secretary Of The Navy Formation of epitaxial si-ge heterostructures by solid phase epitaxy
US5338389A (en) * 1990-01-19 1994-08-16 Research Development Corporation Of Japan Method of epitaxially growing compound crystal and doping method therein
US5097308A (en) * 1990-03-13 1992-03-17 General Instrument Corp. Method for controlling the switching speed of bipolar power devices
US5205871A (en) * 1990-06-01 1993-04-27 The United States Of America As Represented By The Secretary Of The Navy Monocrystalline germanium film on sapphire
US5442205A (en) * 1991-04-24 1995-08-15 At&T Corp. Semiconductor heterostructure devices with strained semiconductor layers
US5221413A (en) * 1991-04-24 1993-06-22 At&T Bell Laboratories Method for making low defect density semiconductor heterostructure and devices made thereby
US5241214A (en) * 1991-04-29 1993-08-31 Massachusetts Institute Of Technology Oxides and nitrides of metastabale group iv alloys and nitrides of group iv elements and semiconductor devices formed thereof
US5259918A (en) * 1991-06-12 1993-11-09 International Business Machines Corporation Heteroepitaxial growth of germanium on silicon by UHV/CVD
DE59209978D1 (de) * 1991-09-23 2003-03-27 Infineon Technologies Ag Verfahren zur Herstellung eines MOS-Transistors
US5286334A (en) * 1991-10-21 1994-02-15 International Business Machines Corporation Nonselective germanium deposition by UHV/CVD
US5523243A (en) * 1992-12-21 1996-06-04 International Business Machines Corporation Method of fabricating a triple heterojunction bipolar transistor
DE4301333C2 (de) * 1993-01-20 2003-05-15 Daimler Chrysler Ag Verfahren zur Herstellung von Silizium-Germanium-Heterobipolartransistoren
US5461243A (en) * 1993-10-29 1995-10-24 International Business Machines Corporation Substrate for tensilely strained semiconductor
JP2748917B2 (ja) * 1996-03-22 1998-05-13 日本電気株式会社 半導体装置
FR2756972B1 (fr) * 1996-12-10 1999-03-05 France Telecom Procede de relaxation de film contraint par fusion de couche interfaciale
US6087683A (en) * 1998-07-31 2000-07-11 Lucent Technologies Silicon germanium heterostructure bipolar transistor with indium doped base
DE19859429A1 (de) * 1998-12-22 2000-06-29 Daimler Chrysler Ag Verfahren zur Herstellung epitaktischer Silizium-Germaniumschichten
US6218711B1 (en) * 1999-02-19 2001-04-17 Advanced Micro Devices, Inc. Raised source/drain process by selective sige epitaxy
US6602760B2 (en) 2000-12-21 2003-08-05 Interuniversitair Microelektronica Centrum (Imec) Method of producing a semiconductor layer on a substrate
EP1583139A1 (en) * 2004-04-02 2005-10-05 Interuniversitaire Microelectronica Centrum vzw ( IMEC) Method for depositing a group III-nitride material on a silicon substrate and device therefor
EP2275591B1 (en) * 2009-07-10 2014-03-19 Imec Method for manufacturing a mono-crystalline layer of germanium or aluminium on a substrate
US8748908B2 (en) 2012-05-07 2014-06-10 Sufian Abedrabbo Semiconductor optical emission device

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3615855A (en) * 1969-04-03 1971-10-26 Gen Motors Corp Radiant energy photovoltalic device
US4357183A (en) * 1980-08-13 1982-11-02 Massachusetts Institute Of Technology Heteroepitaxy of germanium silicon on silicon utilizing alloying control
JPS5742116A (en) * 1980-08-26 1982-03-09 Nippon Telegr & Teleph Corp <Ntt> Semiconductor superlattice crystal
JPS5946414B2 (ja) * 1980-09-16 1984-11-12 沖電気工業株式会社 化合物半導体装置
JPS5753927A (en) * 1980-09-18 1982-03-31 Oki Electric Ind Co Ltd Compound semiconductor device

Also Published As

Publication number Publication date
US4529455A (en) 1985-07-16
JPS60111412A (ja) 1985-06-17

Similar Documents

Publication Publication Date Title
JPH0562452B2 (enExample)
US6232138B1 (en) Relaxed InxGa(1-x)as buffers
US8029905B2 (en) GeSiSn-based compounds, templates, and semiconductor structures
JP3286921B2 (ja) シリコン基板化合物半導体装置
JP2569058B2 (ja) 半導体装置
US6447938B1 (en) Gallium nitride collector grid solar cell
US4861393A (en) Semiconductor heterostructures having Gex Si1-x layers on Si utilizing molecular beam epitaxy
JP2001048698A (ja) 低抵抗ｐ型単結晶酸化亜鉛およびその製造方法
US4960728A (en) Homogenization anneal of II-VI compounds
Zhao et al. Boron-doped III–V semiconductors for Si-based optoelectronic devices
Bean Silicon-based semiconductor heterostructures
JP2010225870A (ja) 半導体素子
US6594293B1 (en) Relaxed InxGa1-xAs layers integrated with Si
US6589335B2 (en) Relaxed InxGa1-xAs layers integrated with Si
US20080217652A1 (en) Growth of AsSb-Based Semiconductor Structures on InP Substrates Using Sb-Containing Buffer Layers
Ren et al. Heteroepitaxy of In0. 53Ga0. 47As on GaAs substrate by low pressure metalorganic chemical vapor deposition for the OEIC applications
WO1994016459A1 (fr) Substrat epitaxial semiconducteur
JPH0722312A (ja) 歪半導体膜の製造方法
JP3254823B2 (ja) 半導体エピタキシャル基板およびその製造方法
CN114038732A (zh) 一种采用界面失配阵列技术在GaAs衬底上生长GaSb的方法
Sirajiddin et al. SYNTHESIS, MORPHOLOGICAL AND PHOTOELECTRIC PROPERTIES OF THE (GAAS) 1-XY (GE2) X (ZNSE) Y SOLID SOLUTIONS
JPH1032165A (ja) 化合物半導体層の成長方法
US20250185408A1 (en) A Method of Manufacturing Group III-V Based Semiconductor Materials Comprising Strain Relaxed Buffers Providing Possibility for Lattice Constant Adjustment When Growing on (111)SI Substrates
Yan et al. High-quality InGaP and InGaP/InAlP multiple quantum well grown by gas-source molecular beam epitaxy
JPH08264456A (ja) 化合物半導体の結晶成長方法