JPH0561239B2 - - Google Patents
Info
- Publication number
- JPH0561239B2 JPH0561239B2 JP28127484A JP28127484A JPH0561239B2 JP H0561239 B2 JPH0561239 B2 JP H0561239B2 JP 28127484 A JP28127484 A JP 28127484A JP 28127484 A JP28127484 A JP 28127484A JP H0561239 B2 JPH0561239 B2 JP H0561239B2
- Authority
- JP
- Japan
- Prior art keywords
- raw material
- single crystal
- crucible
- liquid capsule
- melt
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000013078 crystal Substances 0.000 claims description 78
- 239000007788 liquid Substances 0.000 claims description 74
- 239000002775 capsule Substances 0.000 claims description 59
- 239000002994 raw material Substances 0.000 claims description 38
- 150000001875 compounds Chemical class 0.000 claims description 23
- 239000012535 impurity Substances 0.000 claims description 22
- 239000004065 semiconductor Substances 0.000 claims description 21
- 239000000155 melt Substances 0.000 claims description 17
- 238000000034 method Methods 0.000 claims description 13
- 238000010438 heat treatment Methods 0.000 claims description 7
- 239000008710 crystal-8 Substances 0.000 claims description 3
- 238000005204 segregation Methods 0.000 claims description 3
- 239000008393 encapsulating agent Substances 0.000 claims description 2
- 238000007598 dipping method Methods 0.000 claims 1
- 238000002791 soaking Methods 0.000 claims 1
- 235000012431 wafers Nutrition 0.000 description 7
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 4
- 239000011261 inert gas Substances 0.000 description 4
- 229910000673 Indium arsenide Inorganic materials 0.000 description 3
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910004613 CdTe Inorganic materials 0.000 description 2
- 229910005542 GaSb Inorganic materials 0.000 description 2
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical compound [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 description 2
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 description 2
- 229910001873 dinitrogen Inorganic materials 0.000 description 2
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 description 2
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000005496 eutectics Effects 0.000 description 1
- 229910021478 group 5 element Inorganic materials 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000011780 sodium chloride Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B27/00—Single-crystal growth under a protective fluid
- C30B27/02—Single-crystal growth under a protective fluid by pulling from a melt
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP28127484A JPS61158897A (ja) | 1984-12-29 | 1984-12-29 | 化合物半導体単結晶の引上げ方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP28127484A JPS61158897A (ja) | 1984-12-29 | 1984-12-29 | 化合物半導体単結晶の引上げ方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61158897A JPS61158897A (ja) | 1986-07-18 |
| JPH0561239B2 true JPH0561239B2 (enrdf_load_stackoverflow) | 1993-09-03 |
Family
ID=17636785
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP28127484A Granted JPS61158897A (ja) | 1984-12-29 | 1984-12-29 | 化合物半導体単結晶の引上げ方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61158897A (enrdf_load_stackoverflow) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1992001826A1 (en) * | 1990-07-26 | 1992-02-06 | Sumitomo Electric Industries, Ltd. | Method and apparatus for making single crystal |
| JPH085737B2 (ja) * | 1990-10-17 | 1996-01-24 | コマツ電子金属株式会社 | 半導体単結晶製造装置 |
| US5427056A (en) * | 1990-10-17 | 1995-06-27 | Komatsu Electronic Metals Co., Ltd. | Apparatus and method for producing single crystal |
| JPH06239691A (ja) * | 1993-02-12 | 1994-08-30 | Japan Energy Corp | 単結晶の成長方法 |
-
1984
- 1984-12-29 JP JP28127484A patent/JPS61158897A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS61158897A (ja) | 1986-07-18 |
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