JPH0560647B2 - - Google Patents
Info
- Publication number
- JPH0560647B2 JPH0560647B2 JP20152185A JP20152185A JPH0560647B2 JP H0560647 B2 JPH0560647 B2 JP H0560647B2 JP 20152185 A JP20152185 A JP 20152185A JP 20152185 A JP20152185 A JP 20152185A JP H0560647 B2 JPH0560647 B2 JP H0560647B2
- Authority
- JP
- Japan
- Prior art keywords
- crystal growth
- molecular beam
- sample
- substrate
- cryopanel
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000013078 crystal Substances 0.000 claims description 26
- 238000001451 molecular beam epitaxy Methods 0.000 claims description 8
- 238000001073 sample cooling Methods 0.000 claims description 5
- 239000000758 substrate Substances 0.000 description 17
- 238000001816 cooling Methods 0.000 description 11
- 238000000034 method Methods 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 230000003373 anti-fouling effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000003507 refrigerant Substances 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20152185A JPS6262512A (ja) | 1985-09-13 | 1985-09-13 | 分子線エピタキシ−装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20152185A JPS6262512A (ja) | 1985-09-13 | 1985-09-13 | 分子線エピタキシ−装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6262512A JPS6262512A (ja) | 1987-03-19 |
| JPH0560647B2 true JPH0560647B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1993-09-02 |
Family
ID=16442423
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP20152185A Granted JPS6262512A (ja) | 1985-09-13 | 1985-09-13 | 分子線エピタキシ−装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6262512A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6290923A (ja) * | 1985-10-17 | 1987-04-25 | Fujitsu Ltd | 分子線結晶成長装置 |
| JP2000082661A (ja) | 1998-07-02 | 2000-03-21 | Toshiba Corp | 加熱装置，加熱装置の評価法及びパタ―ン形成方法 |
-
1985
- 1985-09-13 JP JP20152185A patent/JPS6262512A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6262512A (ja) | 1987-03-19 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US8196619B2 (en) | Load lock apparatus, processing system and substrate processing method | |
| JPH0727895B2 (ja) | 半導体ウエハーの処理方法と装置 | |
| JPH0560647B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | ||
| JPS61227169A (ja) | スパツタリング装置 | |
| JPS61111993A (ja) | 分子線エピタキシ装置 | |
| JP3023967B2 (ja) | 熱処理装置 | |
| JPH07115165B2 (ja) | 真空ろう付装置 | |
| CN103243382A (zh) | 一种生长碲化铋纳米薄膜的热壁外延装置和方法 | |
| JPH072617Y2 (ja) | Ｐｂｎルツボの均一加熱機構 | |
| JPS6074517A (ja) | スパツタリング装置 | |
| JPS6173334A (ja) | 処理装置 | |
| JP2508687Y2 (ja) | 熱処理炉 | |
| JPS59152296A (ja) | 分子線エピタキシヤル成長における分子線強度制御方法 | |
| JPH053107B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | ||
| JPH0526447Y2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | ||
| JPS5842225A (ja) | 外熱形の横型半導体気相成長装置 | |
| JPH01305890A (ja) | 分子線結晶成長装置 | |
| JPS63297558A (ja) | ウエハ保持装置 | |
| JPH04162712A (ja) | 減圧ｃｖｄ装置 | |
| JP2002367915A (ja) | 基板処理装置 | |
| JPH03186338A (ja) | バルブ装置 | |
| JPH06151325A (ja) | 割型炉 | |
| JPH03275591A (ja) | 分子線結晶成長装置 | |
| JPS6192396A (ja) | 極低温容器 | |
| JP2851828B2 (ja) | 薄膜形成用分子線源熱遮断装置 |