JPS6262512A - 分子線エピタキシ−装置 - Google Patents

分子線エピタキシ−装置

Info

Publication number
JPS6262512A
JPS6262512A JP20152185A JP20152185A JPS6262512A JP S6262512 A JPS6262512 A JP S6262512A JP 20152185 A JP20152185 A JP 20152185A JP 20152185 A JP20152185 A JP 20152185A JP S6262512 A JPS6262512 A JP S6262512A
Authority
JP
Japan
Prior art keywords
specimen
crystal growth
molecular beam
cooling
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP20152185A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0560647B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html
Inventor
Norio Kanai
金井　謙雄
Naoyuki Tamura
直行 田村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP20152185A priority Critical patent/JPS6262512A/ja
Publication of JPS6262512A publication Critical patent/JPS6262512A/ja
Publication of JPH0560647B2 publication Critical patent/JPH0560647B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
JP20152185A 1985-09-13 1985-09-13 分子線エピタキシ−装置 Granted JPS6262512A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP20152185A JPS6262512A (ja) 1985-09-13 1985-09-13 分子線エピタキシ−装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP20152185A JPS6262512A (ja) 1985-09-13 1985-09-13 分子線エピタキシ−装置

Publications (2)

Publication Number Publication Date
JPS6262512A true JPS6262512A (ja) 1987-03-19
JPH0560647B2 JPH0560647B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1993-09-02

Family

ID=16442423

Family Applications (1)

Application Number Title Priority Date Filing Date
JP20152185A Granted JPS6262512A (ja) 1985-09-13 1985-09-13 分子線エピタキシ−装置

Country Status (1)

Country Link
JP (1) JPS6262512A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6290923A (ja) * 1985-10-17 1987-04-25 Fujitsu Ltd 分子線結晶成長装置
US6441351B2 (en) 1998-07-02 2002-08-27 Kabushiki Kaisha Toshiba Heating device, method for evaluating heating device and pattern forming method

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6290923A (ja) * 1985-10-17 1987-04-25 Fujitsu Ltd 分子線結晶成長装置
US6441351B2 (en) 1998-07-02 2002-08-27 Kabushiki Kaisha Toshiba Heating device, method for evaluating heating device and pattern forming method

Also Published As

Publication number Publication date
JPH0560647B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1993-09-02

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