JPH0559987B2 - - Google Patents

Info

Publication number
JPH0559987B2
JPH0559987B2 JP1548785A JP1548785A JPH0559987B2 JP H0559987 B2 JPH0559987 B2 JP H0559987B2 JP 1548785 A JP1548785 A JP 1548785A JP 1548785 A JP1548785 A JP 1548785A JP H0559987 B2 JPH0559987 B2 JP H0559987B2
Authority
JP
Japan
Prior art keywords
pump
reduced pressure
reactor
gas
exhaust gas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP1548785A
Other languages
English (en)
Japanese (ja)
Other versions
JPS61177370A (ja
Inventor
Hisaharu Kyota
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP1548785A priority Critical patent/JPS61177370A/ja
Publication of JPS61177370A publication Critical patent/JPS61177370A/ja
Publication of JPH0559987B2 publication Critical patent/JPH0559987B2/ja
Granted legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J3/00—Processes of utilising sub-atmospheric or super-atmospheric pressure to effect chemical or physical change of matter; Apparatus therefor
    • B01J3/006—Processes utilising sub-atmospheric pressure; Apparatus therefor
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical Vapour Deposition (AREA)
JP1548785A 1985-01-31 1985-01-31 減圧反応装置 Granted JPS61177370A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1548785A JPS61177370A (ja) 1985-01-31 1985-01-31 減圧反応装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1548785A JPS61177370A (ja) 1985-01-31 1985-01-31 減圧反応装置

Publications (2)

Publication Number Publication Date
JPS61177370A JPS61177370A (ja) 1986-08-09
JPH0559987B2 true JPH0559987B2 (enExample) 1993-09-01

Family

ID=11890150

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1548785A Granted JPS61177370A (ja) 1985-01-31 1985-01-31 減圧反応装置

Country Status (1)

Country Link
JP (1) JPS61177370A (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS648039U (enExample) * 1987-06-29 1989-01-17
US20050250347A1 (en) * 2003-12-31 2005-11-10 Bailey Christopher M Method and apparatus for maintaining by-product volatility in deposition process
KR20240168330A (ko) * 2022-02-24 2024-11-29 아이에이치아이 버넥스 아게 화학 기상 증착 장치

Also Published As

Publication number Publication date
JPS61177370A (ja) 1986-08-09

Similar Documents

Publication Publication Date Title
US6773687B1 (en) Exhaust apparatus for process apparatus and method of removing impurity gas
CN1823404B (zh) 半导体装置的制造方法及衬底处理装置
US6402806B1 (en) Method for unreacted precursor conversion and effluent removal
CN100537844C (zh) 在沉积过程中维持副产物挥发性的方法和设备
US6107198A (en) Ammonium chloride vaporizer cold trap
JP6522892B2 (ja) 真空排気システム
US5797195A (en) Nitrogen trifluoride thermal cleaning apparatus and process
JPH05154334A (ja) 半導体製造装置の排気ポンプシステム
US20110247561A1 (en) Thermal Chemical Vapor Deposition Methods, and Thermal Chemical Vapor Deposition Systems
JPS60198394A (ja) 真空処理装置の排気装置
WO2007099081A1 (en) Method for treating effluents containing fluorocompounds like pfc and hfc
JP3539446B2 (ja) 副生成物トラップ装置及びその洗浄方法
EP0731497A2 (en) Diluted nitrogen trifluoride thermal cleaning process
JPH0559987B2 (enExample)
EP1441043A2 (en) Supply of gas to semiconductor process chamber
JPS6235807B2 (enExample)
JP3153945B2 (ja) 減圧ｃｖｄ装置
JP2686447B2 (ja) 反応装置
US6869579B2 (en) Process for treating exhaust gas
KR101909430B1 (ko) 반도체 공정 시스템용 가스 파우더처리 장치 및 방법
US6436353B1 (en) Gas recovering apparatus
WO2003005427A1 (fr) Systeme de traitement et procede de nettoyage
JPS6322173B2 (enExample)
US6263590B1 (en) Method and apparatus for controlling byproduct induced defect density
JP2009088308A (ja) 基板処理装置

Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term