JPH0559518B2 - - Google Patents
Info
- Publication number
- JPH0559518B2 JPH0559518B2 JP2041007A JP4100790A JPH0559518B2 JP H0559518 B2 JPH0559518 B2 JP H0559518B2 JP 2041007 A JP2041007 A JP 2041007A JP 4100790 A JP4100790 A JP 4100790A JP H0559518 B2 JPH0559518 B2 JP H0559518B2
- Authority
- JP
- Japan
- Prior art keywords
- voltage
- semiconductor integrated
- integrated circuit
- transistor
- internal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 230000015654 memory Effects 0.000 claims description 45
- 239000004065 semiconductor Substances 0.000 claims description 22
- 230000008859 change Effects 0.000 claims description 12
- 239000003990 capacitor Substances 0.000 claims description 7
- 230000005540 biological transmission Effects 0.000 claims 4
- 230000002093 peripheral effect Effects 0.000 description 25
- 230000010354 integration Effects 0.000 description 12
- 238000000034 method Methods 0.000 description 12
- 230000032683 aging Effects 0.000 description 9
- 239000000758 substrate Substances 0.000 description 9
- 230000000694 effects Effects 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 238000002955 isolation Methods 0.000 description 4
- 230000004044 response Effects 0.000 description 4
- 230000015556 catabolic process Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000003491 array Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 239000010410 layer Substances 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 230000009471 action Effects 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000002784 hot electron Substances 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
Landscapes
- For Increasing The Reliability Of Semiconductor Memories (AREA)
- Dram (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2041007A JPH02236895A (ja) | 1990-02-23 | 1990-02-23 | 半導体集積回路 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2041007A JPH02236895A (ja) | 1990-02-23 | 1990-02-23 | 半導体集積回路 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56057143A Division JPS57172761A (en) | 1981-04-17 | 1981-04-17 | Semiconductor integrated circuit |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH02236895A JPH02236895A (ja) | 1990-09-19 |
| JPH0559518B2 true JPH0559518B2 (zh) | 1993-08-31 |
Family
ID=12596339
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2041007A Granted JPH02236895A (ja) | 1990-02-23 | 1990-02-23 | 半導体集積回路 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH02236895A (zh) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS52106279A (en) * | 1976-03-03 | 1977-09-06 | Oki Electric Ind Co Ltd | Manufacture of semiconductor ic |
| JPS53112058A (en) * | 1977-03-11 | 1978-09-30 | Nippon Telegr & Teleph Corp <Ntt> | Semiconductor device and temperature characteristic measuring method of the same |
| JPS545667A (en) * | 1977-06-15 | 1979-01-17 | Matsushita Electric Ind Co Ltd | Test method for semiconductor device |
| JPS5458386A (en) * | 1977-10-19 | 1979-05-11 | Hitachi Ltd | Mos semiconductor device |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5482575U (zh) * | 1977-11-21 | 1979-06-12 |
-
1990
- 1990-02-23 JP JP2041007A patent/JPH02236895A/ja active Granted
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS52106279A (en) * | 1976-03-03 | 1977-09-06 | Oki Electric Ind Co Ltd | Manufacture of semiconductor ic |
| JPS53112058A (en) * | 1977-03-11 | 1978-09-30 | Nippon Telegr & Teleph Corp <Ntt> | Semiconductor device and temperature characteristic measuring method of the same |
| JPS545667A (en) * | 1977-06-15 | 1979-01-17 | Matsushita Electric Ind Co Ltd | Test method for semiconductor device |
| JPS5458386A (en) * | 1977-10-19 | 1979-05-11 | Hitachi Ltd | Mos semiconductor device |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH02236895A (ja) | 1990-09-19 |
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