JPH0558068B2 - - Google Patents

Info

Publication number
JPH0558068B2
JPH0558068B2 JP61147514A JP14751486A JPH0558068B2 JP H0558068 B2 JPH0558068 B2 JP H0558068B2 JP 61147514 A JP61147514 A JP 61147514A JP 14751486 A JP14751486 A JP 14751486A JP H0558068 B2 JPH0558068 B2 JP H0558068B2
Authority
JP
Japan
Prior art keywords
diamond
hydrogen
thermal conductivity
carbon
carbon film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP61147514A
Other languages
English (en)
Japanese (ja)
Other versions
JPS634068A (ja
Inventor
Kazutaka Fujii
Nobuaki Shohata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP61147514A priority Critical patent/JPS634068A/ja
Publication of JPS634068A publication Critical patent/JPS634068A/ja
Publication of JPH0558068B2 publication Critical patent/JPH0558068B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Chemical Vapour Deposition (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Carbon And Carbon Compounds (AREA)
JP61147514A 1986-06-23 1986-06-23 ダイヤモンド状カ−ボン膜 Granted JPS634068A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP61147514A JPS634068A (ja) 1986-06-23 1986-06-23 ダイヤモンド状カ−ボン膜

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61147514A JPS634068A (ja) 1986-06-23 1986-06-23 ダイヤモンド状カ−ボン膜

Publications (2)

Publication Number Publication Date
JPS634068A JPS634068A (ja) 1988-01-09
JPH0558068B2 true JPH0558068B2 (fr) 1993-08-25

Family

ID=15432060

Family Applications (1)

Application Number Title Priority Date Filing Date
JP61147514A Granted JPS634068A (ja) 1986-06-23 1986-06-23 ダイヤモンド状カ−ボン膜

Country Status (1)

Country Link
JP (1) JPS634068A (fr)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2728918B2 (ja) * 1988-11-30 1998-03-18 株式会社リコー 液体噴射記録ヘッド
WO2000071780A1 (fr) * 1999-05-19 2000-11-30 Mitsubishi Shoji Plastics Corporation Film dlc, contenant en plastique recouvert de dlc, et procede et appareil de fabrication de contenant en plastique recouvert de dlc

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5842473A (ja) * 1981-09-07 1983-03-11 Semiconductor Energy Lab Co Ltd サ−マルヘツド作製方法
JPS5842472A (ja) * 1981-09-07 1983-03-11 Semiconductor Energy Lab Co Ltd サ−マルヘツド
JPS60157725A (ja) * 1984-01-26 1985-08-19 Denki Kagaku Kogyo Kk 磁気記憶媒体
JPS60195092A (ja) * 1984-03-15 1985-10-03 Tdk Corp カ−ボン系薄膜の製造方法および装置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5842473A (ja) * 1981-09-07 1983-03-11 Semiconductor Energy Lab Co Ltd サ−マルヘツド作製方法
JPS5842472A (ja) * 1981-09-07 1983-03-11 Semiconductor Energy Lab Co Ltd サ−マルヘツド
JPS60157725A (ja) * 1984-01-26 1985-08-19 Denki Kagaku Kogyo Kk 磁気記憶媒体
JPS60195092A (ja) * 1984-03-15 1985-10-03 Tdk Corp カ−ボン系薄膜の製造方法および装置

Also Published As

Publication number Publication date
JPS634068A (ja) 1988-01-09

Similar Documents

Publication Publication Date Title
Deshpandey et al. Diamond and diamondlike films: Deposition processes and properties
JP3136307B2 (ja) 電子用途用ダイヤモンド載置基板
Ong et al. Effects of substrate temperature on the structure and properties of reactive pulsed laser deposited CNx films
Yara et al. Low temperature fabrication of diamond films with nanocrystal seeding
Bhattacharya et al. Effect of deposition temperature on the growth of nanocrystalline silicon network from helium diluted silane plasma
JPH0558068B2 (fr)
Yara et al. Fabrication of diamond films at low pressure and low-temperature by magneto-active microwave plasma chemical vapor deposition
JP2794173B2 (ja) 複合炭素被膜の形成方法
JP2623475B2 (ja) 対向電極型マイクロ波プラズマ処理装置および処理方法
Kumar et al. High rate deposition of diamond like carbon films by very high frequency plasma enhanced chemical vapor deposition at 100 MHz
JPH04118884A (ja) 固体放電素子
Brassard et al. Substrate biasing effect on the electrical properties of magnetron-sputtered high-k titanium silicate thin films
JPH08288172A (ja) ケイ素添加無定形水素化炭素誘電体を有するコンデンサ
DebRoy et al. Optical emissions during plasma assisted chemical vapor deposition of diamond-like carbon films
Amanullah et al. Characterization of isochronally and isothermally annealed indium tin oxide thin films
Droes et al. Plasma-enhanced chemical vapor deposition (PECVD)
CN1045658A (zh) 一种金属氧化物超导薄膜的制备方法
Kupfer et al. High-rate deposition of MgO by reactive ac pulsed magnetron sputtering in the transition mode
JPH0448757B2 (fr)
JP3276415B2 (ja) セラミックス皮膜の形成方法及び成形装置
JPH079059B2 (ja) 炭素薄膜の製造方法
JPH0665744A (ja) ダイヤモンド状炭素薄膜の製造方法
Baránková et al. Characterization of the linear arc discharge (LAD) source for film deposition
Matsuoka et al. Diamond synthesis by sputtering
JP6944699B2 (ja) 六方晶系窒化ホウ素膜の製造方法