JPH0554263B2 - - Google Patents
Info
- Publication number
- JPH0554263B2 JPH0554263B2 JP57057241A JP5724182A JPH0554263B2 JP H0554263 B2 JPH0554263 B2 JP H0554263B2 JP 57057241 A JP57057241 A JP 57057241A JP 5724182 A JP5724182 A JP 5724182A JP H0554263 B2 JPH0554263 B2 JP H0554263B2
- Authority
- JP
- Japan
- Prior art keywords
- wiring
- polysilicon
- insulating film
- diffusion layer
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000000758 substrate Substances 0.000 claims description 23
- 238000000034 method Methods 0.000 claims description 12
- 239000004065 semiconductor Substances 0.000 claims description 12
- 239000002184 metal Substances 0.000 claims description 10
- 229910052751 metal Inorganic materials 0.000 claims description 10
- 239000012535 impurity Substances 0.000 claims description 7
- 238000004519 manufacturing process Methods 0.000 claims description 6
- 150000001875 compounds Chemical class 0.000 claims description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 41
- 229920005591 polysilicon Polymers 0.000 description 41
- 239000010408 film Substances 0.000 description 38
- 238000009792 diffusion process Methods 0.000 description 33
- 229910021332 silicide Inorganic materials 0.000 description 12
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 11
- 238000005530 etching Methods 0.000 description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 8
- 229910052710 silicon Inorganic materials 0.000 description 8
- 239000010703 silicon Substances 0.000 description 8
- 238000005755 formation reaction Methods 0.000 description 7
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Substances [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 7
- 230000015572 biosynthetic process Effects 0.000 description 6
- VLJQDHDVZJXNQL-UHFFFAOYSA-N 4-methyl-n-(oxomethylidene)benzenesulfonamide Chemical compound CC1=CC=C(S(=O)(=O)N=C=O)C=C1 VLJQDHDVZJXNQL-UHFFFAOYSA-N 0.000 description 5
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 5
- 238000005468 ion implantation Methods 0.000 description 5
- 229910052698 phosphorus Inorganic materials 0.000 description 5
- 239000011574 phosphorus Substances 0.000 description 5
- 229910021340 platinum monosilicide Inorganic materials 0.000 description 5
- 229910004298 SiO 2 Inorganic materials 0.000 description 4
- 238000000137 annealing Methods 0.000 description 4
- 238000001020 plasma etching Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- ZXEYZECDXFPJRJ-UHFFFAOYSA-N $l^{3}-silane;platinum Chemical compound [SiH3].[Pt] ZXEYZECDXFPJRJ-UHFFFAOYSA-N 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- 239000012298 atmosphere Substances 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000009684 ion beam mixing Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- RLOWWWKZYUNIDI-UHFFFAOYSA-N phosphinic chloride Chemical compound ClP=O RLOWWWKZYUNIDI-UHFFFAOYSA-N 0.000 description 2
- 229910021339 platinum silicide Inorganic materials 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 229910015275 MoF 6 Inorganic materials 0.000 description 1
- QZPSXPBJTPJTSZ-UHFFFAOYSA-N aqua regia Chemical compound Cl.O[N+]([O-])=O QZPSXPBJTPJTSZ-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 229910001423 beryllium ion Inorganic materials 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 229910001512 metal fluoride Inorganic materials 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
Landscapes
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57057241A JPS58175847A (ja) | 1982-04-08 | 1982-04-08 | 半導体装置の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57057241A JPS58175847A (ja) | 1982-04-08 | 1982-04-08 | 半導体装置の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58175847A JPS58175847A (ja) | 1983-10-15 |
| JPH0554263B2 true JPH0554263B2 (ko) | 1993-08-12 |
Family
ID=13050031
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57057241A Granted JPS58175847A (ja) | 1982-04-08 | 1982-04-08 | 半導体装置の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58175847A (ko) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL8402859A (nl) * | 1984-09-18 | 1986-04-16 | Philips Nv | Werkwijze voor het vervaardigen van submicrongroeven in bijvoorbeeld halfgeleidermateriaal en met deze werkwijze verkregen inrichtingen. |
| JPH0642484B2 (ja) * | 1985-09-09 | 1994-06-01 | 日本電信電話株式会社 | 半導体装置の製造方法 |
| EP0296718A3 (en) * | 1987-06-26 | 1990-05-02 | Hewlett-Packard Company | A coplanar and self-aligned contact structure |
-
1982
- 1982-04-08 JP JP57057241A patent/JPS58175847A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS58175847A (ja) | 1983-10-15 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPH0343778B2 (ko) | ||
| JP2605008B2 (ja) | 半導体装置の製造方法 | |
| EP0396357B1 (en) | Process for forming CMOS field effect transistors | |
| JPS62588B2 (ko) | ||
| JPH07120795B2 (ja) | 半導体デバイスの製作方法 | |
| JPH0564456B2 (ko) | ||
| US4069067A (en) | Method of making a semiconductor device | |
| US5128272A (en) | Self-aligned planar monolithic integrated circuit vertical transistor process | |
| US5151378A (en) | Self-aligned planar monolithic integrated circuit vertical transistor process | |
| US6281060B1 (en) | Method of manufacturing a semiconductor device containing a BiCMOS circuit | |
| JPH0554263B2 (ko) | ||
| JPH0581051B2 (ko) | ||
| JPH065696B2 (ja) | 半導体装置の製造方法 | |
| JPH0127589B2 (ko) | ||
| JPS6138858B2 (ko) | ||
| JPH10284438A (ja) | 半導体集積回路及びその製造方法 | |
| JP2745946B2 (ja) | 半導体集積回路の製造方法 | |
| JPS6154661A (ja) | 半導体装置の製造方法 | |
| JP3068733B2 (ja) | 半導体装置の製造方法 | |
| KR100230734B1 (ko) | 반도체 소자 및 그의 제조방법 | |
| JPH0475346A (ja) | 半導体装置の製造方法 | |
| JPH1126756A (ja) | 半導体装置の製造方法 | |
| JPH05226590A (ja) | 半導体装置及び半導体装置の製造方法 | |
| JPH08340106A (ja) | 半導体装置の製造方法 | |
| JPH04348039A (ja) | 半導体装置の製造方法 |