JPH055187B2 - - Google Patents

Info

Publication number
JPH055187B2
JPH055187B2 JP59217571A JP21757184A JPH055187B2 JP H055187 B2 JPH055187 B2 JP H055187B2 JP 59217571 A JP59217571 A JP 59217571A JP 21757184 A JP21757184 A JP 21757184A JP H055187 B2 JPH055187 B2 JP H055187B2
Authority
JP
Japan
Prior art keywords
laser
photoelectric conversion
patterning
thin film
bias voltage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP59217571A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6196774A (ja
Inventor
Yoshuki Uchida
Shinji Nishiura
Toshio Hama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fuji Electric Co Ltd
Original Assignee
Fuji Electric Corporate Research and Development Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Electric Corporate Research and Development Ltd filed Critical Fuji Electric Corporate Research and Development Ltd
Priority to JP59217571A priority Critical patent/JPS6196774A/ja
Priority to US06/776,670 priority patent/US4728615A/en
Priority to EP85113194A priority patent/EP0179403A3/en
Publication of JPS6196774A publication Critical patent/JPS6196774A/ja
Publication of JPH055187B2 publication Critical patent/JPH055187B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/10—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26—Testing of individual semiconductor devices
    • G01R31/265—Contactless testing
    • G01R31/2656—Contactless testing using non-ionising electromagnetic radiation, e.g. optical radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
    • H10F19/30—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising thin-film photovoltaic cells
    • H10F19/31—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising thin-film photovoltaic cells having multiple laterally adjacent thin-film photovoltaic cells deposited on the same substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
    • H10F19/30—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising thin-film photovoltaic cells
    • H10F19/31—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising thin-film photovoltaic cells having multiple laterally adjacent thin-film photovoltaic cells deposited on the same substrate
    • H10F19/33—Patterning processes to connect the photovoltaic cells, e.g. laser cutting of conductive or active layers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S136/00—Batteries: thermoelectric and photoelectric
    • Y10S136/29—Testing, calibrating, treating, e.g. aging
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/94—Laser ablative material removal

Landscapes

  • Physics & Mathematics (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Engineering & Computer Science (AREA)
  • Toxicology (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Health & Medical Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Optics & Photonics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Photovoltaic Devices (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
JP59217571A 1984-10-17 1984-10-17 薄膜光電変換素子製造装置 Granted JPS6196774A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP59217571A JPS6196774A (ja) 1984-10-17 1984-10-17 薄膜光電変換素子製造装置
US06/776,670 US4728615A (en) 1984-10-17 1985-09-16 Method for producing thin-film photoelectric transducer
EP85113194A EP0179403A3 (en) 1984-10-17 1985-10-17 Apparatus for producing thin-film photoelectric transducer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59217571A JPS6196774A (ja) 1984-10-17 1984-10-17 薄膜光電変換素子製造装置

Publications (2)

Publication Number Publication Date
JPS6196774A JPS6196774A (ja) 1986-05-15
JPH055187B2 true JPH055187B2 (enExample) 1993-01-21

Family

ID=16706352

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59217571A Granted JPS6196774A (ja) 1984-10-17 1984-10-17 薄膜光電変換素子製造装置

Country Status (3)

Country Link
US (1) US4728615A (enExample)
EP (1) EP0179403A3 (enExample)
JP (1) JPS6196774A (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04266068A (ja) * 1991-02-20 1992-09-22 Canon Inc 光電変換素子及びその製造方法
US20080029152A1 (en) * 2006-08-04 2008-02-07 Erel Milshtein Laser scribing apparatus, systems, and methods
US7879685B2 (en) * 2006-08-04 2011-02-01 Solyndra, Inc. System and method for creating electric isolation between layers comprising solar cells
JP5210056B2 (ja) * 2008-06-05 2013-06-12 芝浦メカトロニクス株式会社 レーザ加工装置
TW201013963A (en) 2008-08-15 2010-04-01 Ulvac Inc Method and apparatus for manufacturing solar battery
DE112009002647T5 (de) * 2008-11-04 2012-06-14 Ulvac, Inc. Verfahren zur Herstellung einer Solarzelle und Vorrichtung zur Herstellung einer Solarzelle
JP5558339B2 (ja) * 2010-12-28 2014-07-23 京セラ株式会社 光電変換モジュールの製造方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4301409A (en) * 1978-06-06 1981-11-17 California Institute Of Technology Solar cell anomaly detection method and apparatus
US4287473A (en) * 1979-05-25 1981-09-01 The United States Of America As Represented By The United States Department Of Energy Nondestructive method for detecting defects in photodetector and solar cell devices
US4315096A (en) * 1980-07-25 1982-02-09 Eastman Kodak Company Integrated array of photovoltaic cells having minimized shorting losses
JPS58158977A (ja) * 1982-02-25 1983-09-21 ユニバ−シテイ・オブ・デラウエア 薄膜太陽電池を製造する方法及び装置
US4640002A (en) * 1982-02-25 1987-02-03 The University Of Delaware Method and apparatus for increasing the durability and yield of thin film photovoltaic devices
JPS5986269A (ja) * 1982-11-09 1984-05-18 Semiconductor Energy Lab Co Ltd 光電変換装置の作製方法
JPS5994884A (ja) * 1982-11-24 1984-05-31 Semiconductor Energy Lab Co Ltd 光電変換装置の作製方法
JPS59107579A (ja) * 1982-12-11 1984-06-21 Semiconductor Energy Lab Co Ltd 光電変換装置の作製方法
JPS6014441A (ja) * 1983-07-04 1985-01-25 Semiconductor Energy Lab Co Ltd 半導体装置作製方法

Also Published As

Publication number Publication date
EP0179403A3 (en) 1988-08-31
JPS6196774A (ja) 1986-05-15
EP0179403A2 (en) 1986-04-30
US4728615A (en) 1988-03-01

Similar Documents

Publication Publication Date Title
Haas et al. High speed laser processing for monolithical series connection of silicon thin‐film modules
JP2005515639A (ja) 薄膜光起電モジュールの製造方法
US20100124600A1 (en) Method and apparatus for detecting and passivating defects in thin film solar cells
JPH055187B2 (enExample)
US20110005571A1 (en) Method and apparatus for manufacturing solar cell, and solar cell
JPS6154681A (ja) 薄膜光起電力素子の製造方法
JPH0837317A (ja) 薄膜太陽電池および薄膜太陽電池の欠陥検出方法およびその方法を用いた薄膜太陽電池の欠陥検出除去装置
JP4233330B2 (ja) 光起電力装置の検査方法
CN102439467A (zh) 大面积半导体器件的电气及光电子表征
US20130314093A1 (en) Method and system employing a solution contact for measurement
JPH0377672B2 (enExample)
JP3043364B2 (ja) 少数キヤリアの界面再結合速度決定方法
WO2009123039A1 (ja) 太陽電池の製造方法および太陽電池の製造装置
Ametowobla Characterization of a laser doping process for crystalline silicon solar cells
JP2009246122A (ja) 太陽電池の製造方法および製造装置
JPH10125632A (ja) レーザエッチング方法及びその装置
JPH11204816A (ja) 半導体薄膜光電変換装置の製造方法
US4700463A (en) Non-crystalline semiconductor solar battery and method of manufacture thereof
Engelhart Laser processing for high-efficiency silicon solar cells
JP2006229052A (ja) 太陽電池とその製造方法及びこれに用いる短絡部除去装置
Ku et al. Electrical characterization of P3 isolation lines patterned with a UV laser incident from the film side on thin-film silicon solar cells
JP2009072831A (ja) レーザースクライブを形成する装置
KR101169455B1 (ko) 태양전지의 제조방법
Abdul Fattah et al. Nanosecond vs picosecond: The potential for advanced solar cell processing via pulsed laser technology
JP2540501B2 (ja) レ−ザ加工方法

Legal Events

Date Code Title Description
LAPS Cancellation because of no payment of annual fees