JPS6196774A - 薄膜光電変換素子製造装置 - Google Patents

薄膜光電変換素子製造装置

Info

Publication number
JPS6196774A
JPS6196774A JP59217571A JP21757184A JPS6196774A JP S6196774 A JPS6196774 A JP S6196774A JP 59217571 A JP59217571 A JP 59217571A JP 21757184 A JP21757184 A JP 21757184A JP S6196774 A JPS6196774 A JP S6196774A
Authority
JP
Japan
Prior art keywords
laser
photoelectric conversion
thin film
conversion device
film photoelectric
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP59217571A
Other languages
English (en)
Japanese (ja)
Other versions
JPH055187B2 (enExample
Inventor
Yoshiyuki Uchida
内田　喜之
Shinji Nishiura
西浦　真治
Toshio Hama
敏夫 濱
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fuji Electric Co Ltd
Original Assignee
Fuji Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Electric Co Ltd filed Critical Fuji Electric Co Ltd
Priority to JP59217571A priority Critical patent/JPS6196774A/ja
Priority to US06/776,670 priority patent/US4728615A/en
Priority to EP85113194A priority patent/EP0179403A3/en
Publication of JPS6196774A publication Critical patent/JPS6196774A/ja
Publication of JPH055187B2 publication Critical patent/JPH055187B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/10—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26—Testing of individual semiconductor devices
    • G01R31/265—Contactless testing
    • G01R31/2656—Contactless testing using non-ionising electromagnetic radiation, e.g. optical radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
    • H10F19/30—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising thin-film photovoltaic cells
    • H10F19/31—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising thin-film photovoltaic cells having multiple laterally adjacent thin-film photovoltaic cells deposited on the same substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
    • H10F19/30—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising thin-film photovoltaic cells
    • H10F19/31—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising thin-film photovoltaic cells having multiple laterally adjacent thin-film photovoltaic cells deposited on the same substrate
    • H10F19/33—Patterning processes to connect the photovoltaic cells, e.g. laser cutting of conductive or active layers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S136/00—Batteries: thermoelectric and photoelectric
    • Y10S136/29—Testing, calibrating, treating, e.g. aging
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/94—Laser ablative material removal

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Optics & Photonics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Photovoltaic Devices (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
JP59217571A 1984-10-17 1984-10-17 薄膜光電変換素子製造装置 Granted JPS6196774A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP59217571A JPS6196774A (ja) 1984-10-17 1984-10-17 薄膜光電変換素子製造装置
US06/776,670 US4728615A (en) 1984-10-17 1985-09-16 Method for producing thin-film photoelectric transducer
EP85113194A EP0179403A3 (en) 1984-10-17 1985-10-17 Apparatus for producing thin-film photoelectric transducer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59217571A JPS6196774A (ja) 1984-10-17 1984-10-17 薄膜光電変換素子製造装置

Publications (2)

Publication Number Publication Date
JPS6196774A true JPS6196774A (ja) 1986-05-15
JPH055187B2 JPH055187B2 (enExample) 1993-01-21

Family

ID=16706352

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59217571A Granted JPS6196774A (ja) 1984-10-17 1984-10-17 薄膜光電変換素子製造装置

Country Status (3)

Country Link
US (1) US4728615A (enExample)
EP (1) EP0179403A3 (enExample)
JP (1) JPS6196774A (enExample)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009291813A (ja) * 2008-06-05 2009-12-17 Shibaura Mechatronics Corp レーザ加工装置
WO2010018869A1 (ja) 2008-08-15 2010-02-18 株式会社アルバック 太陽電池の製造方法及び製造装置
WO2010052884A1 (ja) * 2008-11-04 2010-05-14 株式会社アルバック 太陽電池の製造方法及び製造装置
JP2012142337A (ja) * 2010-12-28 2012-07-26 Kyocera Corp 光電変換モジュールの製造方法

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04266068A (ja) * 1991-02-20 1992-09-22 Canon Inc 光電変換素子及びその製造方法
US20080029152A1 (en) * 2006-08-04 2008-02-07 Erel Milshtein Laser scribing apparatus, systems, and methods
US7879685B2 (en) * 2006-08-04 2011-02-01 Solyndra, Inc. System and method for creating electric isolation between layers comprising solar cells

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5753986A (enExample) * 1980-07-25 1982-03-31 Eastman Kodak Co
JPS5986269A (ja) * 1982-11-09 1984-05-18 Semiconductor Energy Lab Co Ltd 光電変換装置の作製方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4301409A (en) * 1978-06-06 1981-11-17 California Institute Of Technology Solar cell anomaly detection method and apparatus
US4287473A (en) * 1979-05-25 1981-09-01 The United States Of America As Represented By The United States Department Of Energy Nondestructive method for detecting defects in photodetector and solar cell devices
US4640002A (en) * 1982-02-25 1987-02-03 The University Of Delaware Method and apparatus for increasing the durability and yield of thin film photovoltaic devices
JPS58158977A (ja) * 1982-02-25 1983-09-21 ユニバ−シテイ・オブ・デラウエア 薄膜太陽電池を製造する方法及び装置
JPS5994884A (ja) * 1982-11-24 1984-05-31 Semiconductor Energy Lab Co Ltd 光電変換装置の作製方法
JPS59107579A (ja) * 1982-12-11 1984-06-21 Semiconductor Energy Lab Co Ltd 光電変換装置の作製方法
JPS6014441A (ja) * 1983-07-04 1985-01-25 Semiconductor Energy Lab Co Ltd 半導体装置作製方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5753986A (enExample) * 1980-07-25 1982-03-31 Eastman Kodak Co
JPS5986269A (ja) * 1982-11-09 1984-05-18 Semiconductor Energy Lab Co Ltd 光電変換装置の作製方法

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009291813A (ja) * 2008-06-05 2009-12-17 Shibaura Mechatronics Corp レーザ加工装置
WO2010018869A1 (ja) 2008-08-15 2010-02-18 株式会社アルバック 太陽電池の製造方法及び製造装置
WO2010052884A1 (ja) * 2008-11-04 2010-05-14 株式会社アルバック 太陽電池の製造方法及び製造装置
JP5193309B2 (ja) * 2008-11-04 2013-05-08 株式会社アルバック 太陽電池の製造方法及び製造装置
JP2012142337A (ja) * 2010-12-28 2012-07-26 Kyocera Corp 光電変換モジュールの製造方法

Also Published As

Publication number Publication date
US4728615A (en) 1988-03-01
EP0179403A3 (en) 1988-08-31
EP0179403A2 (en) 1986-04-30
JPH055187B2 (enExample) 1993-01-21

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Legal Events

Date Code Title Description
LAPS Cancellation because of no payment of annual fees