JPH055181B2 - - Google Patents
Info
- Publication number
- JPH055181B2 JPH055181B2 JP58106089A JP10608983A JPH055181B2 JP H055181 B2 JPH055181 B2 JP H055181B2 JP 58106089 A JP58106089 A JP 58106089A JP 10608983 A JP10608983 A JP 10608983A JP H055181 B2 JPH055181 B2 JP H055181B2
- Authority
- JP
- Japan
- Prior art keywords
- region
- oxide film
- substrate
- field oxide
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
- H10D62/82—Heterojunctions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58106089A JPS59231865A (ja) | 1983-06-14 | 1983-06-14 | 半導体装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58106089A JPS59231865A (ja) | 1983-06-14 | 1983-06-14 | 半導体装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS59231865A JPS59231865A (ja) | 1984-12-26 |
| JPH055181B2 true JPH055181B2 (OSRAM) | 1993-01-21 |
Family
ID=14424817
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58106089A Granted JPS59231865A (ja) | 1983-06-14 | 1983-06-14 | 半導体装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59231865A (OSRAM) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63237475A (ja) * | 1987-03-25 | 1988-10-03 | Seiko Instr & Electronics Ltd | Ｍｏｓ型電界効果トランジスタの製造方法 |
| JP2947654B2 (ja) * | 1990-10-31 | 1999-09-13 | キヤノン株式会社 | Ｍｉｓ型トランジスタ |
| WO2010067525A1 (ja) * | 2008-12-08 | 2010-06-17 | 住友化学株式会社 | 半導体装置、半導体装置の製造方法、半導体基板、および半導体基板の製造方法 |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57122576A (en) * | 1981-01-22 | 1982-07-30 | Nippon Telegr & Teleph Corp <Ntt> | Semiconductor treating method |
-
1983
- 1983-06-14 JP JP58106089A patent/JPS59231865A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS59231865A (ja) | 1984-12-26 |
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