JPH0550866B2 - - Google Patents

Info

Publication number
JPH0550866B2
JPH0550866B2 JP59135904A JP13590484A JPH0550866B2 JP H0550866 B2 JPH0550866 B2 JP H0550866B2 JP 59135904 A JP59135904 A JP 59135904A JP 13590484 A JP13590484 A JP 13590484A JP H0550866 B2 JPH0550866 B2 JP H0550866B2
Authority
JP
Japan
Prior art keywords
layer
drain
base layer
electrode
conductivity type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP59135904A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6115370A (ja
Inventor
Hiromichi Oohashi
Akio Nakagawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Priority to JP59135904A priority Critical patent/JPS6115370A/ja
Priority to GB8430147A priority patent/GB2150753B/en
Priority to DE3443854A priority patent/DE3443854C2/de
Publication of JPS6115370A publication Critical patent/JPS6115370A/ja
Priority to US06/858,854 priority patent/US4689647A/en
Priority to US07/807,752 priority patent/US5212396A/en
Publication of JPH0550866B2 publication Critical patent/JPH0550866B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/141—Anode or cathode regions of thyristors; Collector or emitter regions of gated bipolar-mode devices, e.g. of IGBTs
    • H10D62/142—Anode regions of thyristors or collector regions of gated bipolar-mode devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H10D12/441—Vertical IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/64—Electrodes comprising a Schottky barrier to a semiconductor

Landscapes

  • Electrodes Of Semiconductors (AREA)
JP59135904A 1983-11-30 1984-06-30 半導体装置 Granted JPS6115370A (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP59135904A JPS6115370A (ja) 1984-06-30 1984-06-30 半導体装置
GB8430147A GB2150753B (en) 1983-11-30 1984-11-29 Semiconductor device
DE3443854A DE3443854C2 (de) 1983-11-30 1984-11-30 Halbleiteranordnung mit isoliertem Gate
US06/858,854 US4689647A (en) 1983-11-30 1986-04-30 Conductivity modulated field effect switch with optimized anode emitter and anode base impurity concentrations
US07/807,752 US5212396A (en) 1983-11-30 1991-12-17 Conductivity modulated field effect transistor with optimized anode emitter and anode base impurity concentrations

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59135904A JPS6115370A (ja) 1984-06-30 1984-06-30 半導体装置

Publications (2)

Publication Number Publication Date
JPS6115370A JPS6115370A (ja) 1986-01-23
JPH0550866B2 true JPH0550866B2 (OSRAM) 1993-07-30

Family

ID=15162540

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59135904A Granted JPS6115370A (ja) 1983-11-30 1984-06-30 半導体装置

Country Status (1)

Country Link
JP (1) JPS6115370A (OSRAM)

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2572210B2 (ja) * 1984-11-20 1997-01-16 三菱電機株式会社 縦型パワ−ｍｏｓ電界効果型半導体装置
JPS63150970A (ja) * 1986-12-15 1988-06-23 Fuji Electric Co Ltd 導電変調型絶縁ゲ−トトランジスタ
JP2579928B2 (ja) * 1987-02-26 1997-02-12 株式会社東芝 半導体素子およびその製造方法
JPS63260174A (ja) * 1987-04-17 1988-10-27 Sanyo Electric Co Ltd 半導体装置の製造方法
JPS63260175A (ja) * 1987-04-17 1988-10-27 Sanyo Electric Co Ltd 半導体装置の製造方法
JPH0828506B2 (ja) * 1988-11-07 1996-03-21 三菱電機株式会社 半導体装置およびその製造方法
JPH07118514B2 (ja) * 1989-04-24 1995-12-18 株式会社東芝 半田バンプ型半導体装置
JPH02309676A (ja) * 1989-05-24 1990-12-25 Meidensha Corp 逆導通形インシュレティッドゲートバイポーラトランジスタ
EP0450082B1 (en) * 1989-08-31 2004-04-28 Denso Corporation Insulated gate bipolar transistor
US7271497B2 (en) * 2003-03-10 2007-09-18 Fairchild Semiconductor Corporation Dual metal stud bumping for flip chip applications
JP5055907B2 (ja) * 2005-10-05 2012-10-24 サンケン電気株式会社 半導体装置
DE102005053487B4 (de) * 2005-11-09 2011-06-09 Infineon Technologies Ag Leistungs-IGBT mit erhöhter Robustheit
JP2007184486A (ja) * 2006-01-10 2007-07-19 Denso Corp 半導体装置
JP5332175B2 (ja) 2007-10-24 2013-11-06 富士電機株式会社 制御回路を備える半導体装置
JP2009194330A (ja) 2008-02-18 2009-08-27 Mitsubishi Electric Corp 半導体装置およびその製造方法
JP4937213B2 (ja) * 2008-08-26 2012-05-23 三菱電機株式会社 電力用半導体装置
US8159022B2 (en) 2008-09-30 2012-04-17 Infineon Technologies Austria Ag Robust semiconductor device with an emitter zone and a field stop zone
JP2013247248A (ja) * 2012-05-25 2013-12-09 Fuji Electric Co Ltd 半導体装置の製造方法
JP2015008235A (ja) * 2013-06-25 2015-01-15 富士電機株式会社 半導体装置の製造方法
JP6260515B2 (ja) 2014-11-13 2018-01-17 三菱電機株式会社 半導体装置
JP6297172B2 (ja) * 2015-01-07 2018-03-20 三菱電機株式会社 炭化珪素半導体装置及びその製造方法
DE102015104723B4 (de) * 2015-03-27 2017-09-21 Infineon Technologies Ag Verfahren zum Herstellen von ersten und zweiten dotierten Gebieten und von Rekombinationsgebieten in einem Halbleiterkörper
US10991822B2 (en) 2017-02-24 2021-04-27 Mitsubishi Electric Corporation Silicon carbide semiconductor device having a conductive layer formed above a bottom surface of a well region so as not to be in ohmic connection with the well region and power converter including the same
JP7156495B2 (ja) 2019-02-27 2022-10-19 富士電機株式会社 半導体装置
CN110676314B (zh) 2019-10-23 2021-05-04 广东美的白色家电技术创新中心有限公司 一种绝缘栅双极型晶体管、功率模块及生活电器
KR102719789B1 (ko) * 2021-11-30 2024-10-18 파칼 테크놀로지스, 인크. 낮은 작동 전압을 갖는 npnp 층상 mos 게이트 트렌치 디바이스

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4364073A (en) * 1980-03-25 1982-12-14 Rca Corporation Power MOSFET with an anode region
JPS58124275A (ja) * 1982-01-12 1983-07-23 シ−メンス・アクチエンゲゼルシヤフト Ｍｉｓ電界効果トランジスタ

Also Published As

Publication number Publication date
JPS6115370A (ja) 1986-01-23

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Legal Events

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EXPY Cancellation because of completion of term