JPH0550861B2 - - Google Patents

Info

Publication number
JPH0550861B2
JPH0550861B2 JP59259673A JP25967384A JPH0550861B2 JP H0550861 B2 JPH0550861 B2 JP H0550861B2 JP 59259673 A JP59259673 A JP 59259673A JP 25967384 A JP25967384 A JP 25967384A JP H0550861 B2 JPH0550861 B2 JP H0550861B2
Authority
JP
Japan
Prior art keywords
region
conductivity type
impurity density
low impurity
gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP59259673A
Other languages
English (en)
Japanese (ja)
Other versions
JPS61137365A (ja
Inventor
Junichi Nishizawa
Naoshige Tamamushi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Priority to JP59259673A priority Critical patent/JPS61137365A/ja
Publication of JPS61137365A publication Critical patent/JPS61137365A/ja
Publication of JPH0550861B2 publication Critical patent/JPH0550861B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/26—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having three or more potential barriers, e.g. photothyristors
    • H10F30/263—Photothyristors

Landscapes

  • Thyristors (AREA)
JP59259673A 1984-12-08 1984-12-08 光トリガ・光クエンチ静電誘導サイリスタ Granted JPS61137365A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59259673A JPS61137365A (ja) 1984-12-08 1984-12-08 光トリガ・光クエンチ静電誘導サイリスタ

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59259673A JPS61137365A (ja) 1984-12-08 1984-12-08 光トリガ・光クエンチ静電誘導サイリスタ

Publications (2)

Publication Number Publication Date
JPS61137365A JPS61137365A (ja) 1986-06-25
JPH0550861B2 true JPH0550861B2 (en, 2012) 1993-07-30

Family

ID=17337309

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59259673A Granted JPS61137365A (ja) 1984-12-08 1984-12-08 光トリガ・光クエンチ静電誘導サイリスタ

Country Status (1)

Country Link
JP (1) JPS61137365A (en, 2012)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011192691A (ja) * 2010-03-12 2011-09-29 Renesas Electronics Corp 半導体装置およびその製造方法

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02102569A (ja) * 1988-10-12 1990-04-16 Nippon Telegr & Teleph Corp <Ntt> 半導体装置
DE202004021675U1 (de) 2003-05-06 2010-05-12 Enecsys Ltd., Cambridge Leistungsversorgungsschaltungen
US8067855B2 (en) 2003-05-06 2011-11-29 Enecsys Limited Power supply circuits
WO2006048689A2 (en) * 2004-11-08 2006-05-11 Encesys Limited Integrated circuits and power supplies

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5814097B2 (ja) * 1975-05-16 1983-03-17 株式会社日立製作所 デンキカイヘイキ
JPS5951743B2 (ja) * 1978-11-08 1984-12-15 株式会社日立製作所 半導体集積装置
JPS55128870A (en) * 1979-03-26 1980-10-06 Semiconductor Res Found Electrostatic induction thyristor and semiconductor device
DE2922301C2 (de) * 1979-05-31 1985-04-25 Siemens AG, 1000 Berlin und 8000 München Lichtsteuerbarer Thyristor und Verfahren zu seiner Herstellung
JPS5637676A (en) * 1979-09-05 1981-04-11 Hitachi Ltd Field effect type semiconductor switching device
JPS5940576A (ja) * 1982-08-30 1984-03-06 Junichi Nishizawa フオトサイリスタ

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011192691A (ja) * 2010-03-12 2011-09-29 Renesas Electronics Corp 半導体装置およびその製造方法

Also Published As

Publication number Publication date
JPS61137365A (ja) 1986-06-25

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Legal Events

Date Code Title Description
LAPS Cancellation because of no payment of annual fees