JPH054833B2 - - Google Patents
Info
- Publication number
- JPH054833B2 JPH054833B2 JP26714086A JP26714086A JPH054833B2 JP H054833 B2 JPH054833 B2 JP H054833B2 JP 26714086 A JP26714086 A JP 26714086A JP 26714086 A JP26714086 A JP 26714086A JP H054833 B2 JPH054833 B2 JP H054833B2
- Authority
- JP
- Japan
- Prior art keywords
- quantum well
- layer
- light
- region
- well region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004065 semiconductor Substances 0.000 claims description 17
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 6
- 238000005253 cladding Methods 0.000 description 6
- 239000000969 carrier Substances 0.000 description 5
- 230000010355 oscillation Effects 0.000 description 5
- 239000013078 crystal Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000001451 molecular beam epitaxy Methods 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 239000011701 zinc Substances 0.000 description 2
- 229910052725 zinc Inorganic materials 0.000 description 2
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
Landscapes
- Semiconductor Lasers (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP26714086A JPS63120490A (ja) | 1986-11-10 | 1986-11-10 | 半導体レ−ザ |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP26714086A JPS63120490A (ja) | 1986-11-10 | 1986-11-10 | 半導体レ−ザ |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS63120490A JPS63120490A (ja) | 1988-05-24 |
JPH054833B2 true JPH054833B2 (ko) | 1993-01-20 |
Family
ID=17440634
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP26714086A Granted JPS63120490A (ja) | 1986-11-10 | 1986-11-10 | 半導体レ−ザ |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS63120490A (ko) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0619418U (ja) * | 1992-06-10 | 1994-03-15 | 三千男 谷本 | 刈払機の線状刈刃巻回構造 |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4922500A (en) * | 1989-04-21 | 1990-05-01 | Bell Communications Research, Inc. | Cross-coupled quantum-well stripe laser array |
-
1986
- 1986-11-10 JP JP26714086A patent/JPS63120490A/ja active Granted
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0619418U (ja) * | 1992-06-10 | 1994-03-15 | 三千男 谷本 | 刈払機の線状刈刃巻回構造 |
Also Published As
Publication number | Publication date |
---|---|
JPS63120490A (ja) | 1988-05-24 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
EP0227865A1 (en) | Light emitting semiconductor device | |
EP1187277B1 (en) | Stepped substrate semiconductor laser for emitting light at slant portion | |
JP2686306B2 (ja) | 半導体レーザ装置とその製造方法 | |
EP0915542B1 (en) | Semiconductor laser having improved current blocking layers and method of forming the same | |
US4759025A (en) | Window structure semiconductor laser | |
JP2778454B2 (ja) | 半導体レーザ | |
JPH04350988A (ja) | 量子井戸構造発光素子 | |
JPH054833B2 (ko) | ||
JP3801410B2 (ja) | 半導体レーザ素子及びその製造方法 | |
JP2679974B2 (ja) | 半導体レーザ装置 | |
JPH09129969A (ja) | 半導体レーザ | |
JP2748570B2 (ja) | 半導体レーザ素子 | |
JP2555984B2 (ja) | 半導体レーザおよびその製造方法 | |
JPS6244713B2 (ko) | ||
JP3223969B2 (ja) | 半導体レーザ | |
JPH0632343B2 (ja) | 半導体レ−ザ | |
JPH0728093B2 (ja) | 半導体レ−ザ素子 | |
JPH07202346A (ja) | 半導体装置の製造方法および半導体装置 | |
JP3191359B2 (ja) | 半導体レーザー | |
JPH054834B2 (ko) | ||
JPH08236858A (ja) | p型基板埋め込み型半導体レーザ及びその製造方法 | |
JPH05343813A (ja) | 量子井戸構造半導体レーザ装置及び製造方法 | |
JPH05160509A (ja) | 量子井戸構造埋め込み半導体レーザ | |
JPH0722212B2 (ja) | 量子井戸レーザ | |
JPH11168256A (ja) | 発光素子及びその製造方法 |