JPH0547920B2 - - Google Patents
Info
- Publication number
- JPH0547920B2 JPH0547920B2 JP57227760A JP22776082A JPH0547920B2 JP H0547920 B2 JPH0547920 B2 JP H0547920B2 JP 57227760 A JP57227760 A JP 57227760A JP 22776082 A JP22776082 A JP 22776082A JP H0547920 B2 JPH0547920 B2 JP H0547920B2
- Authority
- JP
- Japan
- Prior art keywords
- data
- memory cell
- output
- nonvolatile semiconductor
- reading
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
Landscapes
- Read Only Memory (AREA)
- Non-Volatile Memory (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57227760A JPS59121696A (ja) | 1982-12-28 | 1982-12-28 | 不揮発性半導体メモリ |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57227760A JPS59121696A (ja) | 1982-12-28 | 1982-12-28 | 不揮発性半導体メモリ |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4144168A Division JP2502008B2 (ja) | 1992-06-04 | 1992-06-04 | 不揮発性半導体メモリ |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS59121696A JPS59121696A (ja) | 1984-07-13 |
| JPH0547920B2 true JPH0547920B2 (enrdf_load_stackoverflow) | 1993-07-20 |
Family
ID=16865941
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57227760A Granted JPS59121696A (ja) | 1982-12-28 | 1982-12-28 | 不揮発性半導体メモリ |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59121696A (enrdf_load_stackoverflow) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61165892A (ja) * | 1985-01-17 | 1986-07-26 | Matsushita Electric Ind Co Ltd | 不揮発性メモリの書込回路 |
| US7190617B1 (en) | 1989-04-13 | 2007-03-13 | Sandisk Corporation | Flash EEprom system |
| EP1031992B1 (en) | 1989-04-13 | 2006-06-21 | SanDisk Corporation | Flash EEPROM system |
| KR100566465B1 (ko) | 1995-01-31 | 2006-03-31 | 가부시끼가이샤 히다치 세이사꾸쇼 | 반도체 메모리 장치 |
| US6320785B1 (en) | 1996-07-10 | 2001-11-20 | Hitachi, Ltd. | Nonvolatile semiconductor memory device and data writing method therefor |
| JP3062730B2 (ja) | 1996-07-10 | 2000-07-12 | 株式会社日立製作所 | 不揮発性半導体記憶装置および書込み方法 |
| JP3629144B2 (ja) * | 1998-06-01 | 2005-03-16 | 株式会社東芝 | 不揮発性半導体記憶装置 |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5346621B2 (enrdf_load_stackoverflow) * | 1974-10-21 | 1978-12-15 | ||
| JPS54161853A (en) * | 1978-06-12 | 1979-12-21 | Seiko Epson Corp | Read-only memory |
-
1982
- 1982-12-28 JP JP57227760A patent/JPS59121696A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS59121696A (ja) | 1984-07-13 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| EP0297518B1 (en) | Programmable read only memory with means for discharging bit line before program verifying operation | |
| US5612920A (en) | Semiconductor memory device having a voltage down converter for generating an internal power supply voltage from an external power supply | |
| US6219273B1 (en) | Integrated semiconductor-magnetic random access memory system | |
| JPS6161198B2 (enrdf_load_stackoverflow) | ||
| JPH01171200A (ja) | 電気的にプログラムすることが可能なメモリセルのテスト方法と対応する集積回路 | |
| EP0166540B1 (en) | A semiconductor memory device | |
| US5930172A (en) | Page buffer for a multi-level flash memory with a limited number of latches per memory cell | |
| US3824564A (en) | Integrated threshold mnos memory with decoder and operating sequence | |
| US4805151A (en) | Nonvolatile semiconductor memory device | |
| US6137719A (en) | Nonvolatile semiconductor memory device storing multi-bit data | |
| EP0167275A2 (en) | Semiconductor memory device | |
| JPH0547920B2 (enrdf_load_stackoverflow) | ||
| JPH03134897A (ja) | 不揮発性メモリ | |
| US5867427A (en) | Electrically writable nonvolatile semiconductor memory device | |
| EP0325105B1 (en) | Multiport memory | |
| US4809230A (en) | Semiconductor memory device with active pull up | |
| EP0259862A1 (en) | Semiconductor memory with improved write function | |
| US5136186A (en) | Glitch free power-up for a programmable array | |
| US7054191B1 (en) | Method and system for writing data to memory cells | |
| JP2001057094A (ja) | 多値不揮発性半導体メモリ | |
| JPH034998B2 (enrdf_load_stackoverflow) | ||
| US4821237A (en) | Semiconductor memory device | |
| JP2502008B2 (ja) | 不揮発性半導体メモリ | |
| JPH11126490A (ja) | 不揮発性半導体メモリ | |
| JP2572607B2 (ja) | 半導体記憶装置 |