JPH0546707B2 - - Google Patents
Info
- Publication number
- JPH0546707B2 JPH0546707B2 JP59068025A JP6802584A JPH0546707B2 JP H0546707 B2 JPH0546707 B2 JP H0546707B2 JP 59068025 A JP59068025 A JP 59068025A JP 6802584 A JP6802584 A JP 6802584A JP H0546707 B2 JPH0546707 B2 JP H0546707B2
- Authority
- JP
- Japan
- Prior art keywords
- single crystal
- cdte
- current path
- film
- hgcdte
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000013078 crystal Substances 0.000 claims description 37
- 229910004613 CdTe Inorganic materials 0.000 claims description 29
- 238000001514 detection method Methods 0.000 claims description 16
- 238000004519 manufacturing process Methods 0.000 claims description 12
- 238000005530 etching Methods 0.000 claims description 9
- 238000000034 method Methods 0.000 claims description 9
- 239000007772 electrode material Substances 0.000 claims description 8
- 239000000758 substrate Substances 0.000 claims description 7
- 238000010030 laminating Methods 0.000 claims description 2
- 238000000151 deposition Methods 0.000 claims 1
- 229910000661 Mercury cadmium telluride Inorganic materials 0.000 description 20
- 239000000969 carrier Substances 0.000 description 7
- 230000007547 defect Effects 0.000 description 7
- 230000000694 effects Effects 0.000 description 5
- 238000007796 conventional method Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 238000009825 accumulation Methods 0.000 description 2
- 239000007791 liquid phase Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000006798 recombination Effects 0.000 description 2
- 238000005215 recombination Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- MODGUXHMLLXODK-UHFFFAOYSA-N [Br].CO Chemical compound [Br].CO MODGUXHMLLXODK-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
- H10F30/10—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices being sensitive to infrared radiation, visible or ultraviolet radiation, and having no potential barriers, e.g. photoresistors
Landscapes
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
- Light Receiving Elements (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59068025A JPS60211884A (ja) | 1984-04-05 | 1984-04-05 | 赤外線検出素子及びその製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59068025A JPS60211884A (ja) | 1984-04-05 | 1984-04-05 | 赤外線検出素子及びその製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60211884A JPS60211884A (ja) | 1985-10-24 |
| JPH0546707B2 true JPH0546707B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1993-07-14 |
Family
ID=13361856
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59068025A Granted JPS60211884A (ja) | 1984-04-05 | 1984-04-05 | 赤外線検出素子及びその製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60211884A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2604298B1 (fr) * | 1986-09-19 | 1988-10-28 | Commissariat Energie Atomique | Procede de realisation d'une prise de contact electrique sur un substrat en hgcdte de conductivite p et application a la fabrication d'une diode n/p |
-
1984
- 1984-04-05 JP JP59068025A patent/JPS60211884A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS60211884A (ja) | 1985-10-24 |
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