JPH0546086B2 - - Google Patents
Info
- Publication number
- JPH0546086B2 JPH0546086B2 JP58159275A JP15927583A JPH0546086B2 JP H0546086 B2 JPH0546086 B2 JP H0546086B2 JP 58159275 A JP58159275 A JP 58159275A JP 15927583 A JP15927583 A JP 15927583A JP H0546086 B2 JPH0546086 B2 JP H0546086B2
- Authority
- JP
- Japan
- Prior art keywords
- pressure
- bonding
- oxide film
- semiconductor
- mirror
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004065 semiconductor Substances 0.000 claims description 32
- 239000000758 substrate Substances 0.000 claims description 20
- 229910052710 silicon Inorganic materials 0.000 claims description 16
- 239000010703 silicon Substances 0.000 claims description 16
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 15
- 238000000034 method Methods 0.000 claims description 12
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims description 6
- 238000005498 polishing Methods 0.000 claims description 4
- 239000008188 pellet Substances 0.000 description 20
- 239000011521 glass Substances 0.000 description 9
- 239000000853 adhesive Substances 0.000 description 7
- 230000001070 adhesive effect Effects 0.000 description 7
- 238000010438 heat treatment Methods 0.000 description 6
- 230000003068 static effect Effects 0.000 description 5
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 4
- 239000013078 crystal Substances 0.000 description 4
- 239000010410 layer Substances 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 239000012790 adhesive layer Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 229920001296 polysiloxane Polymers 0.000 description 3
- 230000035945 sensitivity Effects 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 125000005372 silanol group Chemical group 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 229910008051 Si-OH Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910002808 Si–O–Si Inorganic materials 0.000 description 1
- 229910006358 Si—OH Inorganic materials 0.000 description 1
- QZPSXPBJTPJTSZ-UHFFFAOYSA-N aqua regia Chemical compound Cl.O[N+]([O-])=O QZPSXPBJTPJTSZ-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000005388 borosilicate glass Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
- 230000005494 condensation Effects 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 230000018044 dehydration Effects 0.000 description 1
- 238000006297 dehydration reaction Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000005496 eutectics Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/84—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by variation of applied mechanical force, e.g. of pressure
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Measuring Fluid Pressure (AREA)
- Pressure Sensors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15927583A JPS6050970A (ja) | 1983-08-31 | 1983-08-31 | 半導体圧力変換器 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15927583A JPS6050970A (ja) | 1983-08-31 | 1983-08-31 | 半導体圧力変換器 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP40481290A Division JPH0673383B2 (ja) | 1990-12-21 | 1990-12-21 | 半導体圧力変換器の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6050970A JPS6050970A (ja) | 1985-03-22 |
| JPH0546086B2 true JPH0546086B2 (ko) | 1993-07-13 |
Family
ID=15690219
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15927583A Granted JPS6050970A (ja) | 1983-08-31 | 1983-08-31 | 半導体圧力変換器 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6050970A (ko) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001345435A (ja) * | 2000-03-29 | 2001-12-14 | Shin Etsu Handotai Co Ltd | シリコンウェーハ及び貼り合わせウェーハの製造方法、並びにその貼り合わせウェーハ |
| US6461939B1 (en) | 1999-04-09 | 2002-10-08 | Shin-Etsu Handotai Co., Ltd. | SOI wafers and methods for producing SOI wafer |
| US6797632B1 (en) | 1999-10-14 | 2004-09-28 | Shin-Etsu Handotai Co., Ltd. | Bonded wafer producing method and bonded wafer |
| WO2004102668A1 (ja) | 2003-05-15 | 2004-11-25 | Shin-Etsu Handotai Co. Ltd. | Ｓｏｉウェーハおよびその製造方法 |
| US8918278B2 (en) | 2000-08-28 | 2014-12-23 | Inrix Global Services Limited | Method and system for modeling and processing vehicular traffic data and information and applying thereof |
| US9026114B2 (en) | 2004-07-09 | 2015-05-05 | INRX Global Services Limited | System and method for geographically locating a cellular phone |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62122148A (ja) * | 1985-11-21 | 1987-06-03 | Toshiba Corp | 半導体基板 |
| JPH0795505B2 (ja) * | 1990-02-28 | 1995-10-11 | 信越半導体株式会社 | 接合ウエーハの製造方法 |
| JPH10223497A (ja) * | 1997-01-31 | 1998-08-21 | Shin Etsu Handotai Co Ltd | 貼り合わせ基板の作製方法 |
| JP3635200B2 (ja) | 1998-06-04 | 2005-04-06 | 信越半導体株式会社 | Ｓｏｉウェーハの製造方法 |
| JP3385972B2 (ja) | 1998-07-10 | 2003-03-10 | 信越半導体株式会社 | 貼り合わせウェーハの製造方法および貼り合わせウェーハ |
| WO2001048825A1 (fr) | 1999-12-24 | 2001-07-05 | Shin-Etsu Handotai Co., Ltd. | Procédé de production de tranche collée |
| WO2001093334A1 (fr) | 2000-05-30 | 2001-12-06 | Shin-Etsu Handotai Co.,Ltd. | Procede de fabrication d'une plaquette collee et cette derniere |
| KR20030072954A (ko) * | 2002-03-07 | 2003-09-19 | 주식회사 케이이씨 | 반도체 압력 센서 및 그 제조 방법 |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5710980A (en) * | 1980-06-23 | 1982-01-20 | Mitsubishi Electric Corp | Semiconductor pressure detecting device |
-
1983
- 1983-08-31 JP JP15927583A patent/JPS6050970A/ja active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5710980A (en) * | 1980-06-23 | 1982-01-20 | Mitsubishi Electric Corp | Semiconductor pressure detecting device |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6461939B1 (en) | 1999-04-09 | 2002-10-08 | Shin-Etsu Handotai Co., Ltd. | SOI wafers and methods for producing SOI wafer |
| EP2413352A2 (en) | 1999-04-09 | 2012-02-01 | Shin-Etsu Handotai Co., Ltd. | Soi wafer and method for producing soi wafer |
| US6797632B1 (en) | 1999-10-14 | 2004-09-28 | Shin-Etsu Handotai Co., Ltd. | Bonded wafer producing method and bonded wafer |
| JP2001345435A (ja) * | 2000-03-29 | 2001-12-14 | Shin Etsu Handotai Co Ltd | シリコンウェーハ及び貼り合わせウェーハの製造方法、並びにその貼り合わせウェーハ |
| US8918278B2 (en) | 2000-08-28 | 2014-12-23 | Inrix Global Services Limited | Method and system for modeling and processing vehicular traffic data and information and applying thereof |
| WO2004102668A1 (ja) | 2003-05-15 | 2004-11-25 | Shin-Etsu Handotai Co. Ltd. | Ｓｏｉウェーハおよびその製造方法 |
| US9026114B2 (en) | 2004-07-09 | 2015-05-05 | INRX Global Services Limited | System and method for geographically locating a cellular phone |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6050970A (ja) | 1985-03-22 |
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