JPH0544822B2 - - Google Patents

Info

Publication number
JPH0544822B2
JPH0544822B2 JP60062605A JP6260585A JPH0544822B2 JP H0544822 B2 JPH0544822 B2 JP H0544822B2 JP 60062605 A JP60062605 A JP 60062605A JP 6260585 A JP6260585 A JP 6260585A JP H0544822 B2 JPH0544822 B2 JP H0544822B2
Authority
JP
Japan
Prior art keywords
susceptor
thermostat
heater
temperature
wafer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP60062605A
Other languages
English (en)
Japanese (ja)
Other versions
JPS60220929A (ja
Inventor
Fujitsugu Nakatsui
Yoshimasa Fukushima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP6260585A priority Critical patent/JPS60220929A/ja
Publication of JPS60220929A publication Critical patent/JPS60220929A/ja
Publication of JPH0544822B2 publication Critical patent/JPH0544822B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67098Apparatus for thermal treatment
    • H01L21/67103Apparatus for thermal treatment mainly by conduction
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Physics & Mathematics (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Plasma & Fusion (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
JP6260585A 1985-03-27 1985-03-27 プラズマcvd装置 Granted JPS60220929A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6260585A JPS60220929A (ja) 1985-03-27 1985-03-27 プラズマcvd装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6260585A JPS60220929A (ja) 1985-03-27 1985-03-27 プラズマcvd装置

Publications (2)

Publication Number Publication Date
JPS60220929A JPS60220929A (ja) 1985-11-05
JPH0544822B2 true JPH0544822B2 (enExample) 1993-07-07

Family

ID=13205117

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6260585A Granted JPS60220929A (ja) 1985-03-27 1985-03-27 プラズマcvd装置

Country Status (1)

Country Link
JP (1) JPS60220929A (enExample)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5075256A (en) * 1989-08-25 1991-12-24 Applied Materials, Inc. Process for removing deposits from backside and end edge of semiconductor wafer while preventing removal of materials from front surface of wafer

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55121649A (en) * 1979-03-14 1980-09-18 Pioneer Electronic Corp Cvd device

Also Published As

Publication number Publication date
JPS60220929A (ja) 1985-11-05

Similar Documents

Publication Publication Date Title
US11265971B2 (en) Sensor system for multi-zone electrostatic chuck
US5603772A (en) Furnace equipped with independently controllable heater elements for uniformly heating semiconductor wafers
TWI594362B (zh) 可調式溫度控制基板支撐組件
TW201534754A (zh) 像素化溫度控制的基板支撐組件
JP2003123943A (ja) 加熱装置
JPH0586477B2 (enExample)
US20230298916A1 (en) System and method for heating semiconductor wafers
CN108022852B (zh) Icp刻蚀机台及其绝缘窗口薄膜加热器装置和温度控制方法
JPS63216283A (ja) 加熱装置
US2847554A (en) Electrical heating apparatus
JPH0544822B2 (enExample)
US6057235A (en) Method for reducing surface charge on semiconducter wafers to prevent arcing during plasma deposition
JP2000306917A (ja) 基板加熱装置
US5074952A (en) Zone-melt recrystallization method and apparatus
JPH11283730A (ja) 円盤状ヒータ
JPH07106317A (ja) 試料台
JPH037883A (ja) 薄膜加熱装置
JP7763759B2 (ja) マルチゾーン静電チャック
JPS644237Y2 (enExample)
JP2002373764A (ja) 加熱板の温度制御装置
US2626448A (en) Apparatus for and method of treating selenium rectifiers
JP3228993B2 (ja) 基板加熱機能を有する成膜装置
JP2909835B2 (ja) 半導体製造装置および液処理方法
JP2816339B2 (ja) 加熱装置
JPH0927380A (ja) オゾン発生装置