JPH053983B2 - - Google Patents
Info
- Publication number
- JPH053983B2 JPH053983B2 JP63117934A JP11793488A JPH053983B2 JP H053983 B2 JPH053983 B2 JP H053983B2 JP 63117934 A JP63117934 A JP 63117934A JP 11793488 A JP11793488 A JP 11793488A JP H053983 B2 JPH053983 B2 JP H053983B2
- Authority
- JP
- Japan
- Prior art keywords
- atomic
- optical memory
- erasing
- recording
- memory medium
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 230000003287 optical effect Effects 0.000 claims description 36
- 239000000463 material Substances 0.000 claims description 13
- 229910052741 iridium Inorganic materials 0.000 claims description 9
- 239000000203 mixture Substances 0.000 claims description 9
- 229910052697 platinum Inorganic materials 0.000 claims description 9
- 230000008859 change Effects 0.000 claims description 8
- 229910052750 molybdenum Inorganic materials 0.000 claims description 7
- 229910052751 metal Inorganic materials 0.000 claims description 6
- 229910052726 zirconium Inorganic materials 0.000 claims description 5
- 239000002184 metal Substances 0.000 claims description 4
- 238000002425 crystallisation Methods 0.000 description 35
- 230000008025 crystallization Effects 0.000 description 35
- 239000010410 layer Substances 0.000 description 23
- 239000011669 selenium Substances 0.000 description 14
- 239000013078 crystal Substances 0.000 description 11
- 229910052714 tellurium Inorganic materials 0.000 description 11
- 230000007423 decrease Effects 0.000 description 9
- 239000000758 substrate Substances 0.000 description 9
- 230000004913 activation Effects 0.000 description 7
- 239000002667 nucleating agent Substances 0.000 description 7
- 238000004544 sputter deposition Methods 0.000 description 7
- 238000000034 method Methods 0.000 description 6
- 229910045601 alloy Inorganic materials 0.000 description 5
- 239000000956 alloy Substances 0.000 description 5
- 229910052797 bismuth Inorganic materials 0.000 description 5
- 229910005793 GeO 2 Inorganic materials 0.000 description 4
- 229910052787 antimony Inorganic materials 0.000 description 4
- 229910052732 germanium Inorganic materials 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 230000000704 physical effect Effects 0.000 description 4
- 238000003860 storage Methods 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 239000002244 precipitate Substances 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 230000008901 benefit Effects 0.000 description 2
- 230000001678 irradiating effect Effects 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 239000011241 protective layer Substances 0.000 description 2
- 229910052711 selenium Inorganic materials 0.000 description 2
- 239000013077 target material Substances 0.000 description 2
- 229910005900 GeTe Inorganic materials 0.000 description 1
- 229910018321 SbTe Inorganic materials 0.000 description 1
- 229910001370 Se alloy Inorganic materials 0.000 description 1
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910001215 Te alloy Inorganic materials 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 238000005280 amorphization Methods 0.000 description 1
- 239000003708 ampul Substances 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 230000009477 glass transition Effects 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 238000005191 phase separation Methods 0.000 description 1
- 238000004321 preservation Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
Landscapes
- Thermal Transfer Or Thermal Recording In General (AREA)
- Optical Record Carriers And Manufacture Thereof (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63117934A JPH01287836A (ja) | 1988-05-14 | 1988-05-14 | 書き換え可能な相変化型光メモリ媒体 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63117934A JPH01287836A (ja) | 1988-05-14 | 1988-05-14 | 書き換え可能な相変化型光メモリ媒体 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH01287836A JPH01287836A (ja) | 1989-11-20 |
| JPH053983B2 true JPH053983B2 (zh) | 1993-01-19 |
Family
ID=14723826
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63117934A Granted JPH01287836A (ja) | 1988-05-14 | 1988-05-14 | 書き換え可能な相変化型光メモリ媒体 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01287836A (zh) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0310886A (ja) * | 1989-06-09 | 1991-01-18 | Hisankabutsu Glass Kenkyu Kaihatsu Kk | 光情報記録媒体 |
| JPH0376684A (ja) * | 1989-08-21 | 1991-04-02 | Hisankabutsu Glass Kenkyu Kaihatsu Kk | 書換え型光情報記録媒体 |
| JP2596478B2 (ja) * | 1991-03-20 | 1997-04-02 | 非酸化物ガラス研究開発株式会社 | 書換え形光情報記録媒体 |
| JP4900993B2 (ja) * | 2000-08-30 | 2012-03-21 | 株式会社東芝 | スパッタリングターゲットとそれを用いたＧｅ系薄膜の製造方法 |
-
1988
- 1988-05-14 JP JP63117934A patent/JPH01287836A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPH01287836A (ja) | 1989-11-20 |
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