JPH0538897U - Electronic parts storage package - Google Patents

Electronic parts storage package

Info

Publication number
JPH0538897U
JPH0538897U JP087143U JP8714391U JPH0538897U JP H0538897 U JPH0538897 U JP H0538897U JP 087143 U JP087143 U JP 087143U JP 8714391 U JP8714391 U JP 8714391U JP H0538897 U JPH0538897 U JP H0538897U
Authority
JP
Japan
Prior art keywords
layer
lid
package
metallized
electronic parts
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP087143U
Other languages
Japanese (ja)
Inventor
定功 吉田
浩志 隈元
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kyocera Corp
Original Assignee
Kyocera Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kyocera Corp filed Critical Kyocera Corp
Priority to JP087143U priority Critical patent/JPH0538897U/en
Publication of JPH0538897U publication Critical patent/JPH0538897U/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/161Cap
    • H01L2924/1615Shape
    • H01L2924/16152Cap comprising a cavity for hosting the device, e.g. U-shaped cap

Landscapes

  • Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)

Abstract

(57)【要約】 【目的】ノイズに対するシールド効果が大きく、且つ内
部に収容する電子部品の電極が短絡することのない電子
部品収納用パッケージを提供することにある。 【構成】椀状の蓋体3の凹部B内壁にメタライズ層9が
被着形成されており、且つ前記メタライズ層9は絶縁層
10によって被覆されている。メタライズ層9によりノ
イズに対するシールド効果が大幅に向上する。また、メ
タライズ層9は絶縁層10で被覆されているのでボンデ
ィングワイヤー7と蓋体3とが接触しても電子部品の電
極に短絡が発生することはない。
(57) [Summary] [Object] To provide a package for storing electronic parts, which has a large effect of shielding against noise and which does not short-circuit electrodes of the electronic parts housed inside. A metallization layer 9 is formed on the inner wall of a recess B of a bowl-shaped lid 3 by deposition, and the metallization layer 9 is covered with an insulating layer 10. The metallized layer 9 significantly improves the noise shielding effect. Further, since the metallized layer 9 is covered with the insulating layer 10, even if the bonding wire 7 and the lid 3 come into contact with each other, a short circuit does not occur in the electrode of the electronic component.

Description

【考案の詳細な説明】[Detailed description of the device]

【0001】[0001]

【産業上の利用分野】[Industrial applications]

本考案は、電子部品を収容するための電子部品収納用パッケージに関する。 The present invention relates to an electronic component storage package for storing electronic components.

【0002】[0002]

【従来の技術及びその課題】[Prior art and its problems]

従来の電子部品収納用パッケージは、電子部品を搭載するための搭載部が形成 されたアルミナセラミックス等の電気絶縁材料より成る基体と、同じくアルミナ セラミックス等の電気絶縁材料より成り、基体の搭載部に搭載される半導体素子 を収容する空所を形成するための凹部を有する蓋体とを備えている。基体の搭載 部に搭載された電子部品はその電極が、例えば基体に設けられたメタライズ配線 層にボンディングワイヤーを介して接続される。基体のメタライズ配線層を外部 電気回路の配線に接続することによって、電子部品の電極は外部電気回路の配線 と接続される。 Conventional electronic component storage packages consist of a base made of an electrically insulating material such as alumina ceramics on which a mounting portion for mounting electronic components is formed, and an electrically insulating material such as alumina ceramics. And a lid having a recess for forming a cavity for housing a semiconductor element to be mounted. The electrodes of the electronic component mounted on the mounting portion of the base body are connected to, for example, a metallized wiring layer provided on the base body via bonding wires. By connecting the metallized wiring layer of the substrate to the wiring of the external electric circuit, the electrode of the electronic component is connected to the wiring of the external electric circuit.

【0003】 電子部品収納用パッケージ内に収容される電子部品としては、外部からのノイ ズが問題となるものや、電子部品からのノイズを発生し、他の装置に悪影響を与 えるものがある。そのような場合には、パッケージを気密封止する蓋体にもノイ ズに対するシールド機能が要求される。Some electronic components housed in the electronic component storage package have a problem of noise from the outside, and some electronic devices generate noise from the electronic components to adversely affect other devices. .. In such a case, the lid that hermetically seals the package is also required to have a noise shielding function.

【0004】 ところが、従来使用されているアルミナセラミックス等の電気絶縁材料から成 る一般的な蓋体では、ノイズに対するシールド効果が低い。そのため、蓋体本体 として、コバール合金または42アロイから成る板に、ニッケルメッキや金メッ キを施したものが使用される場合がある。However, the conventional lid body made of an electrically insulating material such as alumina ceramics, which has been conventionally used, has a low noise shielding effect. Therefore, as the lid main body, a plate made of Kovar alloy or 42 alloy and plated with nickel or gold may be used.

【0005】 しかし、これらの金属製蓋体では、ノイズに対するシールド効果は良好である が、パッケージ内部に収容する電子部品と基体に設けたメタライズ配線層とを接 続するボンディングワイヤーが接触した場合、電子部品の電極が短絡して電子部 品を正常に作動させることができなくなる欠点がある。特に、近年は電部品収納 用パッケージの薄型化が急激に進み蓋体とボンディングワイヤーとの距離がます ます短くなってきており、短絡の危険性は極めて高いものとなっている。However, although these metal lids have a good shielding effect against noise, when the bonding wires that connect the electronic components housed inside the package and the metallized wiring layer provided on the base body come into contact with each other, There is a drawback that the electrodes of electronic parts are short-circuited and the electronic parts cannot operate normally. In particular, in recent years, the package for storing electrical components has rapidly become thinner, and the distance between the lid and the bonding wire has become shorter and shorter, and the risk of short circuit is extremely high.

【0006】[0006]

【考案の目的】[The purpose of the device]

本考案は上記欠点に鑑み案出されたものでその目的は、ノイズを良好にシール ドし、且つパッケージ内の電子部品との短絡を防止できる電子部品収納用パッケ ージを提供することにある。 The present invention has been devised in view of the above-mentioned drawbacks, and an object thereof is to provide a package for storing electronic components, which can shield noise well and can prevent a short circuit with an electronic component in a package. ..

【0007】[0007]

【課題を解決するための手段】[Means for Solving the Problems]

本考案は、電子部品を搭載するための搭載部を有する基体と、該搭載部に搭載 される電子部品を収容する空所を形成するための凹部を有する椀状の蓋体とから なる電子部品収納用パッケージであって、前記椀状の蓋体はその凹部内壁に金属 層が被着されており、且つ該金属層は絶縁層により被覆されていることを特徴と する。 The present invention relates to an electronic component including a base body having a mounting portion for mounting an electronic component, and a bowl-shaped lid having a recess for forming a space for accommodating the electronic component mounted on the mounting portion. The storage package is characterized in that the bowl-shaped lid has an inner wall of a recess coated with a metal layer, and the metal layer is covered with an insulating layer.

【0008】[0008]

【実施例】【Example】

次に本考案を添付図面に基づき詳細に説明する。 図1は本考案の電子部品収納用パッケージとして半導体素子を収容する半導体 素子収納用パッケージを例に示す断面図であり、半導体素子収納用パッケージ1 は、主に、基体2と蓋体3とから構成されている。 Next, the present invention will be described in detail with reference to the accompanying drawings. FIG. 1 is a cross-sectional view showing an example of a semiconductor element housing package for housing a semiconductor element as an electronic component housing package of the present invention. The semiconductor element housing package 1 is mainly composed of a base body 2 and a lid body 3. It is configured.

【0009】 前記基体2は、概ね四角形の板状の部材であり、酸化アルミニウム質焼結体、 ムライト質焼結体、窒化アルミニウム質焼結体、炭化珪素質焼結体等の電気絶縁 材料で構成されている。The substrate 2 is a substantially rectangular plate-shaped member, and is made of an electrically insulating material such as an aluminum oxide sintered body, a mullite sintered body, an aluminum nitride sintered body, or a silicon carbide sintered body. It is configured.

【0010】 また前記基体2の上面中央部には半導体素子4を搭載する搭載部Aが形成され ており、該搭載部Aには半導体素子4が接着剤を介して取着固定されている。A mounting portion A for mounting the semiconductor element 4 is formed in the central portion of the upper surface of the base body 2, and the semiconductor element 4 is attached and fixed to the mounting portion A with an adhesive.

【0011】 尚、前記基体2は例えば、酸化アルミニウム質焼結体から成る場合、アルミナ 、シリカ、カルシア、マグネシア等の原料粉末に適当なバインダー、有機溶媒を 添加混合して泥漿となし、これを従来周知のドクターブレード法を採用すること によってシート状のセラミックグリーンシートを得、しかる後、前記セラミック グリーンシートに適当な打ち抜き加工を施すとともにこれを複数枚積層して生セ ラミック体となし、最後に還元雰囲気中約1600℃の温度で焼成することによ って作成される。When the substrate 2 is made of, for example, an aluminum oxide sintered body, a raw material powder such as alumina, silica, calcia and magnesia is mixed with an appropriate binder and an organic solvent to form a slurry. A sheet-shaped ceramic green sheet is obtained by adopting the well-known doctor blade method, and then the ceramic green sheet is punched appropriately and a plurality of these are laminated to form a raw ceramic body. It is prepared by firing at a temperature of about 1600 ° C. in a reducing atmosphere.

【0012】 また、前記基体2は搭載部A周辺より底面にかけて導出するタングステン、モ リブデン等の高融点金属粉末から成る複数のメタライズ配線層6が形成されてお り、メタライズ配線層6の搭載部A周辺部位には半導体素子4の電極がボンディ ングワイヤー7を介して接続される。Further, the base body 2 is formed with a plurality of metallized wiring layers 6 made of a refractory metal powder such as tungsten and molybdenum, which is led out from the periphery of the mounting portion A to the bottom surface, and the mounting portion of the metallized wiring layer 6 is formed. The electrode of the semiconductor element 4 is connected to the peripheral portion of A through a bonding wire 7.

【0013】 尚、前記メタライズ配線層6の底面に導出した部位は外部電気回路の配線と接 続するための端子となる。The portion led out to the bottom surface of the metallized wiring layer 6 serves as a terminal for connecting to the wiring of the external electric circuit.

【0014】 また前記メタライズ配線層6はタングステン、モリブデン等の高融点金属粉末 に適当なバインダー、有機溶媒を添加混合して得た金属ペーストを従来周知のス クリーン印刷法等の厚膜手法を採用することによって基体2となるセラミックグ リーンシートに印刷塗布しておくことによって形成される。For the metallized wiring layer 6, a metal paste obtained by adding and mixing an appropriate binder and an organic solvent to a refractory metal powder such as tungsten and molybdenum is adopted by a conventionally known thick film method such as a screen printing method. By doing so, it is formed by printing and applying it to the ceramic green sheet which will be the substrate 2.

【0015】 前記基体2はまたその上面に蓋体3がガラス、樹脂、半田等の封止剤8を介し て接合される。A lid 3 is joined to the upper surface of the base body 2 via a sealant 8 such as glass, resin or solder.

【0016】 前記蓋体3は、酸化アルミニウム質焼結体等の電気絶縁材料から成る概ね四角 形の椀状部材であり、下面側に半導体素子を収容する空所を形成するための凹部 Bが形成されている。The lid 3 is a substantially rectangular bowl-shaped member made of an electrically insulating material such as an aluminum oxide sintered body, and has a recess B for forming a cavity for housing a semiconductor element on the lower surface side. Has been formed.

【0017】 前記蓋体3は例えば酸化アルミニウム質焼結体から成る場合、アルミナ、シリ カ、カルシア、マグネシア等の原料粉末に適当なバインダー、有機溶媒を添加混 合して泥漿となし、これを従来周知のドクターブレード法を採用することによっ てシート状のセラミックグリーンシートを得、しかる後、前記セラミックグリー ンシートに適当な打ち抜き加工を施すとともにこれを複数枚積層して生セラミッ ク体となし、最後に還元雰囲気中約1600℃の温度で焼成することによって作 成される。When the lid body 3 is made of, for example, an aluminum oxide sintered body, an appropriate binder and an organic solvent are added to and mixed with a raw material powder of alumina, silica, calcia, magnesia, etc. to form a sludge. A sheet-shaped ceramic green sheet is obtained by adopting the well-known doctor blade method, and then the ceramic green sheet is punched appropriately and a plurality of these are laminated to form a raw ceramic body. Finally, it is formed by firing in a reducing atmosphere at a temperature of about 1600 ° C.

【0018】 また、前記蓋体3はその凹部B内壁に、タングステン、モリブデン等の高融点 金属から成るメタライズ層9が形成されており、さらに該メタライズ層9はアル ミナセラミックス等の絶縁層10により被覆されている。The lid 3 has a metallized layer 9 made of a refractory metal such as tungsten or molybdenum formed on the inner wall of the recess B, and the metallized layer 9 is made of an insulating layer 10 such as aluminum ceramics. It is covered.

【0019】 前記メタライズ層9はタングステン、モリブデン等の高融点金属粉末から成り 、該高融点金属粉末に適当なバインダー、有機溶媒を添加混合することによって 得た金属ペーストを前記蓋体3となるセラミックグリーンシートに従来周知のス クリーン印刷等の厚膜手法で印刷塗布させておくことによって蓋体3の凹部B内 壁に被着形成される。The metallized layer 9 is made of a refractory metal powder such as tungsten and molybdenum, and a metal paste obtained by adding and mixing an appropriate binder and an organic solvent to the refractory metal powder is used as the lid 3 ceramic. The green sheet is adhered to the inner wall of the recess B of the lid body 3 by printing and applying the green sheet by a thick film method such as conventionally known screen printing.

【0020】 前記メタライズ層9は蓋体3を介して半導体素子収納用パッケージ1内にノイ ズが入り込む、或いは内部に収容した半導体素子4等から発生するノイズが蓋体 3を介して外部に漏れるのを有効に防止する作用を為し、これによって半導体素 子収納用パッケージ1内に収容される半導体素子4はノイズに関し外部と完全に 遮断されることとなる。In the metallized layer 9, noise enters the semiconductor element housing package 1 through the lid 3, or noise generated from the semiconductor element 4 or the like housed inside leaks to the outside through the lid 3. The semiconductor element 4 housed in the semiconductor element housing package 1 is completely shielded from noise with respect to the outside.

【0021】 また前記メタライズ層9の露出表面を被覆する絶縁層10は酸化アルミニウム 、ムライト、窒化アルミニウム、炭化珪素等の電気絶縁材料から成り、例えば酸 化アルミニウムで形成する場合には酸化アルミニウム(アルミナ) にバインダー 、有機溶媒を添加混合して得た絶縁物ペーストを蓋体3のメタライズ層9表面に 従来周知のスクリーン印刷法により印刷塗布させておくことによって形成される 。The insulating layer 10 that covers the exposed surface of the metallized layer 9 is made of an electrically insulating material such as aluminum oxide, mullite, aluminum nitride, or silicon carbide. For example, when it is made of aluminum oxide, aluminum oxide (alumina) is used. ) Is added with a binder and an organic solvent and mixed, and an insulating paste obtained by printing is applied to the surface of the metallized layer 9 of the lid body 3 by a conventionally known screen printing method.

【0022】 前記絶縁層10は半導体素子4とメタライズ配線層6とを接続するボンディン グワイヤー7が蓋体3に被着させたメタライズ層9に接触しないように作用し、 絶縁層10によってパッケージの薄型化に伴って蓋体3のメタライズ層9とボン ディングワイヤー7とが接近しても、ボンディングワイヤー7はメタライズ層9 に接触することは一切無く、その結果、半導体素子4の電極の電気的短絡は常に 皆無で、電子部品を長期間にわたり正常、且つ安定に作動させることが可能とな る。The insulating layer 10 acts so that the bonding wire 7 connecting the semiconductor element 4 and the metallized wiring layer 6 does not come into contact with the metallized layer 9 attached to the lid body 3, and the insulating layer 10 reduces the thickness of the package. Even if the metallization layer 9 of the lid 3 and the bonding wire 7 come close to each other due to the aging, the bonding wire 7 never touches the metallization layer 9 and, as a result, an electrical short circuit of the electrode of the semiconductor element 4 occurs. There is always nothing, and it is possible to operate electronic parts normally and stably for a long period of time.

【0023】 尚、前記絶縁層10はその材質を蓋体3と実質的に同一材質となしておくと蓋 体3と絶縁層10との間に熱が印加された際、両者間に両者の熱膨張係数のそう い起因した熱応力が殆ど発生せず、絶縁層10を蓋体3に強固に被着させてメタ ライズ層9を常に被覆することができる。従って、前記絶縁層10は蓋体3と実 質的に同一の材質で形成しておくことが好ましい。If the insulating layer 10 is made of substantially the same material as that of the lid body 3, when heat is applied between the lid body 3 and the insulating layer 10, the insulating layer 10 and the lid body 3 will not be exposed to each other. Almost no thermal stress due to such a coefficient of thermal expansion is generated, and the insulating layer 10 can be firmly adhered to the lid body 3 to always cover the metallized layer 9. Therefore, it is preferable that the insulating layer 10 is made of substantially the same material as the lid 3.

【0024】 かくして本考案の半導体素子収納用パッケージによれば、基体2の搭載部Aに 半導体素子4を取着搭載した後、半導体素子4の各電極とメタライズ配線層6と をボンディングワイヤー7を介して接続し、最後に基体2の上面に蓋体3をガラ ス、樹脂、半田等の封止剤8を介して接合させることにより最終製品としての半 導体装置となる。Thus, according to the semiconductor element housing package of the present invention, after mounting the semiconductor element 4 on the mounting portion A of the base body 2, each electrode of the semiconductor element 4 and the metallized wiring layer 6 are bonded by the bonding wire 7. Then, the lid 3 is finally connected to the upper surface of the base 2 via the sealing agent 8 such as glass, resin, solder or the like, whereby a semiconductor device as a final product is obtained.

【0025】 尚、本発明は前記実施例に限定されるものではなく、本考案の要旨を逸脱しな い範囲であれば種々の変更は可能であり、例えば前記実施例ではメタライズ層9 をタングステンやモリブデン等の高融点金属粉末で形成したが、銀−パラジウム や銅等の他の金属で形成してもよい。この場合、銀−パラジウムや銅等から成る メタライズ層9は生セラミック体を焼成して蓋体3を得た後、蓋体3の凹部B内 壁に銀−パラジウム、銅等の金属ペーストを従来周知のスクリーン印刷等の厚膜 手法を採用することによって印刷塗布するとともにこれを約1000℃の高温で 焼き付けるとによって蓋体3の凹部B内壁に被着させる。The present invention is not limited to the above-mentioned embodiment, and various modifications can be made without departing from the scope of the present invention. For example, in the above-mentioned embodiment, the metallization layer 9 is made of tungsten. Although it is formed of a high melting point metal powder such as molybdenum or molybdenum, it may be formed of another metal such as silver-palladium or copper. In this case, the metallized layer 9 made of silver-palladium, copper or the like is obtained by firing the green ceramic body to obtain the lid body 3, and then a metal paste of silver-palladium, copper or the like is conventionally formed on the inner wall of the recess B of the lid body 3. A well-known thick film technique such as screen printing is applied for printing, and this is baked at a high temperature of about 1000 ° C. to adhere to the inner wall of the recess B of the lid 3.

【0026】 また、前記実施例ではメタライズ層9をスクリーン印刷等の厚膜手法を採用し て被着形成したが、蒸着やスパッタ等の薄膜手法を採用して被着形成してもよい 。Although the metallized layer 9 is deposited by using a thick film method such as screen printing in the above embodiment, it may be deposited by using a thin film method such as vapor deposition or sputtering.

【0027】 更に、前記実施例では絶縁層10はアルミナセラミックスから成っていたが、 他のセラミックスやガラス、或いはポリイミドやエポキシ等の耐熱性樹脂を用い てもよい。Further, although the insulating layer 10 is made of alumina ceramics in the above-mentioned embodiment, other ceramics or glass, or heat resistant resin such as polyimide or epoxy may be used.

【0028】 また更に、前記実施例は半導体素子収納用パッケージを例にとって説明したが 、水晶振動子やSAWフィルター等の他の種類の電子部品を収容するパッケージ にも適用し得る。Furthermore, although the above embodiment has been described by taking the package for housing a semiconductor element as an example, the present invention can be applied to a package for housing other types of electronic components such as a crystal oscillator and a SAW filter.

【0029】[0029]

【考案の効果】[Effect of the device]

本考案に係る電子部品収納用パッケージは、蓋体の凹部内壁にメタライズ層が 被着形成されていることから、該メタライズ層によりノイズに対するシールド効 果は大幅に向上している。 In the package for storing electronic parts according to the present invention, the metallization layer is formed on the inner wall of the recess of the lid, so that the effect of shielding against noise is significantly improved by the metallization layer.

【0030】 また、本考案に係る電子部品収納用パッケージは、蓋体の凹部内壁に被着形成 されたメタライズ層が絶縁層で被覆されていることから、該絶縁層がパッケージ 内部に収容する電子部品と接続されたボンディングワイヤーとメタライズ金属層 との接触による電子部品の短絡を有効に防止し、その結果、内部に収容する電子 部品を常に正常に作動させることができる。Further, in the package for storing electronic components according to the present invention, the metallization layer formed on the inner wall of the recess of the lid is covered with the insulating layer, so that the electronic layer housed inside the package is covered with the insulating layer. It is possible to effectively prevent a short circuit of the electronic component due to the contact between the bonding wire connected to the component and the metallized metal layer, and as a result, the electronic component housed inside can always operate normally.

【図面の簡単な説明】[Brief description of drawings]

【図1】本考案の一実施例が採用された半導体素子収納
用パッケージの断面図である。
FIG. 1 is a cross-sectional view of a semiconductor device housing package according to an embodiment of the present invention.

【符号の説明】[Explanation of symbols]

1・・・電子部品収納用パッケージ 2・・・基体 3・・・蓋体 9・・・メタライズ層 10・・絶縁層 DESCRIPTION OF SYMBOLS 1 ... Package for storing electronic components 2 ... Base body 3 ... Lid body 9 ... Metallization layer 10 ... Insulation layer

Claims (1)

【実用新案登録請求の範囲】[Scope of utility model registration request] 【請求項1】電子部品を搭載するための搭載部を有する
基体と、該搭載部に搭載される電子部品を収容する空所
を形成するための凹部を有する椀状の蓋体とからなる電
子部品収納用パッケージであって、前記椀状の蓋体はそ
の凹部内壁に金属層が被着されており、且つ該金属層は
絶縁層により被覆されていることを特徴とする電子部品
収納用パッケージ。
1. An electron comprising a base having a mounting portion for mounting an electronic component, and a bowl-shaped lid having a recess for forming a space for accommodating the electronic component mounted on the mounting portion. A package for storing electronic components, wherein the bowl-shaped lid has a metal layer coated on the inner wall of the recess, and the metal layer is covered with an insulating layer. .
JP087143U 1991-10-24 1991-10-24 Electronic parts storage package Pending JPH0538897U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP087143U JPH0538897U (en) 1991-10-24 1991-10-24 Electronic parts storage package

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP087143U JPH0538897U (en) 1991-10-24 1991-10-24 Electronic parts storage package

Publications (1)

Publication Number Publication Date
JPH0538897U true JPH0538897U (en) 1993-05-25

Family

ID=13906761

Family Applications (1)

Application Number Title Priority Date Filing Date
JP087143U Pending JPH0538897U (en) 1991-10-24 1991-10-24 Electronic parts storage package

Country Status (1)

Country Link
JP (1) JPH0538897U (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000058692A (en) * 1998-08-14 2000-02-25 Toyo Commun Equip Co Ltd Package for electronic components
JP2013026919A (en) * 2011-07-22 2013-02-04 Seiko Instruments Inc Method of manufacturing electronic device package, electronic device package, and oscillator
JP2014229866A (en) * 2013-05-27 2014-12-08 京セラ株式会社 Substrate for mounting electronic component and electronic component mounting package using the same

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS633441A (en) * 1986-06-23 1988-01-08 Nec Corp Package for integrated circuit

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS633441A (en) * 1986-06-23 1988-01-08 Nec Corp Package for integrated circuit

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000058692A (en) * 1998-08-14 2000-02-25 Toyo Commun Equip Co Ltd Package for electronic components
JP2013026919A (en) * 2011-07-22 2013-02-04 Seiko Instruments Inc Method of manufacturing electronic device package, electronic device package, and oscillator
JP2014229866A (en) * 2013-05-27 2014-12-08 京セラ株式会社 Substrate for mounting electronic component and electronic component mounting package using the same

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