JPH0536747A - Bonding wire and manufacture thereof - Google Patents

Bonding wire and manufacture thereof

Info

Publication number
JPH0536747A
JPH0536747A JP4006148A JP614892A JPH0536747A JP H0536747 A JPH0536747 A JP H0536747A JP 4006148 A JP4006148 A JP 4006148A JP 614892 A JP614892 A JP 614892A JP H0536747 A JPH0536747 A JP H0536747A
Authority
JP
Japan
Prior art keywords
wire
bonding
ball
annealed
bonded
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP4006148A
Other languages
Japanese (ja)
Other versions
JPH0719790B2 (en
Inventor
Hitoshi Onuki
仁 大貫
Masateru Suwa
正輝 諏訪
Masahiro Koizumi
正博 小泉
Tomio Iizuka
富雄 飯塚
Tateo Tamamura
建雄 玉村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP4006148A priority Critical patent/JPH0719790B2/en
Publication of JPH0536747A publication Critical patent/JPH0536747A/en
Publication of JPH0719790B2 publication Critical patent/JPH0719790B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

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    • H01L2924/161—Cap
    • H01L2924/1615—Shape
    • H01L2924/16152—Cap comprising a cavity for hosting the device, e.g. U-shaped cap
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)

Abstract

PURPOSE:To obtain a wire whose local deformation is minimum by using a metal whose elongation percentage does not exceed a specific value in the annealed state and, what is more, annealing the wire. CONSTITUTION:This is a bonding wire made of Cu or Al annealed to such a perfect degree that the whole wire is subjected to virtually no elastic deformation at a recrystallization temperature or over. It is specified that the size of the wire ranges from 20 to 100mum while the specific resistance of the wire is 15muOMEGAcm or below and the elongation percentage at a room temperature is 60% or below under an annealed state. This construction makes it possible to provide a wire bonding which produces no local deformation at the joints of the wire and hence provide a high reliability semiconductor device without breaking wires.

Description

【発明の詳細な説明】Detailed Description of the Invention

【０００１】[0001]

【産業上の利用分野】本発明は新規な電気的装置とその
製法及びそれを用いるボンデング用ワイヤとその製法に
係り、特に、ボールボンデングされた半導体素子を有す
る半導体装置とその製法及びそのボンデング用ワイヤと
その製法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a novel electric device, a method of manufacturing the same, a bonding wire using the same, and a method of manufacturing the same, and more particularly, a semiconductor device having a ball-bonded semiconductor element, a method of manufacturing the same, and bonding thereof. Wire and its manufacturing method.

【０００２】[0002]

【従来の技術】現在、半導体装置（ＩＣ，ＬＳＩ，トラ
ンジスタ）として、半導体素子とパッケージの外部リー
ドフレームとの接続に、直径２０〜５０μｍのＡｕワイ
ヤが多く使用されている。半導体素子へのワイヤの接続
は、Ａｕワイヤの先端に放電又は水素火炎により自らの
溶融によりボールを形成し、そのボールを半導体素子に
直接又はめっき膜を介して熱圧着又は超音波接合によっ
て行われている。一方、リードフレームへの接続は、キ
ャピラリーによってウェッジボンデングされている。2. Description of the Related Art At present, as a semiconductor device (IC, LSI, transistor), an Au wire having a diameter of 20 to 50 μm is often used for connecting a semiconductor element and an external lead frame of a package. The wire is connected to the semiconductor element by forming a ball at the tip of the Au wire by melting itself by discharge or hydrogen flame, and thermocompression bonding or ultrasonic bonding of the ball to the semiconductor element directly or through the plated film. ing. On the other hand, the connection to the lead frame is wedge-bonded by a capillary.

【０００３】[0003]

【発明が解決しようとする課題】しかし、Ａｕワイヤは
高価なことからその代りにＡｌワイヤを使用することが
検討されている。Ａｌワイヤのボンデングにおいても前
述のように熱圧着又は超音波接合が検討されている。し
かし、従来のＡｌワイヤは加工されたままである。発明
者らは、このものの熱圧着又は超音波接合のいずれかに
おいても、接合部近傍のワイヤ部分が加熱され軟かくな
る結果、半導体素子からリードフレーム端子への接続に
際して図１に示すように接合部で局部的な変形が生じる
こと、及びこのような局部的な変形がワイヤを局部的に
細くさせるだけでなく、断線等の原因になることを見い
出した。However, since Au wires are expensive, it is considered to use Al wires instead. Also in the bonding of Al wires, thermocompression bonding or ultrasonic bonding has been studied as described above. However, the conventional Al wire remains processed. In either of the thermocompression bonding or the ultrasonic bonding, the inventors of the present invention have heated and softened the wire portion in the vicinity of the bonded portion, and as a result, when connecting the semiconductor element to the lead frame terminal, as shown in FIG. It has been found that a local deformation occurs in a part, and that such a local deformation not only makes the wire thin locally but also causes a wire breakage or the like.

【０００４】更に発明者らは、Ａｌワイヤのボールボン
デングについて検討した結果、従来のＡｌワイヤは前述
の如く加工されたままでケースに巻かれているので、そ
の先端にボールを形成する際に、図３に示すように弾性
的に屈曲しているため、ボールが偏心して形成されるこ
と、及びボールの形成の際には、先端だけでなくその近
傍も加熱されるので、焼なましを受ける状態となりボー
ル直上でワイヤが軟化したり、局部的にくびれたりする
という問題があることを見い出した。Further, as a result of studying the ball bonding of the Al wire, the inventors have found that the conventional Al wire is wound on the case while being processed as described above. As shown in FIG. 3, since the ball is elastically bent, the ball is formed eccentrically, and at the time of forming the ball, not only the tip but also the vicinity thereof is heated, so that the ball is annealed. It was found that there was a problem that the wire softened directly above the ball and was locally constricted.

【０００５】そして、ボールの偏心は、ボンデング部が
パッドからはみ出し、他のボンデング部と短絡を引き起
こしたり、回路を傷つけたりする原因になることを見い
出した。It has been found that the eccentricity of the ball causes the bonding portion to protrude from the pad, causing a short circuit with other bonding portions and damaging the circuit.

【０００６】また、発明者らは、ボール直上にくびれが
生じたり、軟化したりすると、焼なましを受けていない
部分は加工硬化を受けた状態のままであるから、図２に
示すようにワイヤの残留加工歪により、ワイヤとボンデ
ング部ときれいな曲線を描かずに折れ曲った形でワイヤ
ボンデングされ、これが断線の原因となること、特に半
導体素子とリードフレームとの接合面に段差を有するジ
ュアルインライン型ＩＣ，ＬＳＩでは図２に示すように
ワイヤと半導体素子との短絡（矢印）の大きな原因とな
ることを見い出した。Further, the inventors have found that when a constriction occurs or a softening occurs immediately above the ball, the portion that has not been annealed remains in a work-hardened state, as shown in FIG. Due to the residual processing strain of the wire, the wire is bonded in a bent shape without drawing a clean curve with the wire and the bonding part, which causes disconnection, especially there is a step on the joint surface between the semiconductor element and the lead frame It has been found that the dual-line type IC and LSI cause a short circuit (arrow) between the wire and the semiconductor element as shown in FIG.

【０００７】本発明の目的は、局部的な変形の少ないワ
イヤによって電気的に接続された電気的装置とその製法
及びそのボンデング用ワイヤとその製法を提供するにあ
る。An object of the present invention is to provide an electric device electrically connected by a wire having a small local deformation, its manufacturing method, its bonding wire and its manufacturing method.

【０００８】[0008]

【課題を解決するための手段】本発明は、回路素子間を
細径ワイヤによって固相接合して電気的に接続してなる
ものにおいて、前記ワイヤは焼なまし状態で室温の伸び
率が６０％以下である金属からなり、且つ焼なましされ
ていることを特徴とする電気的装置にある。According to the present invention, circuit elements are solid-phase bonded with a small-diameter wire and electrically connected to each other. The wire has an elongation at room temperature of 60 in an annealed state. % Of the metal or less, and annealed.

【０００９】焼なまし状態で室温の伸び率が６０％以下
の金属ワイヤは加工されたままでは加工硬化が著しく、
ワイヤが硬化しているので、ボールの表面に形成された
酸化皮膜が前述の熱圧着又は超音波接合において破壊し
にくく、そのため接合が困難になる。更に、前述のよう
に接合時の加熱によって接合部近傍が軟化されるので、
特に局部的な変形率が大きい。このような伸び率を有す
る金属ワイヤは焼なましされた軟いものにする必要があ
ることを見出した。焼なましによって、ワイヤ自体が全
体に軟かくなり、局部的な変形がなく、断線等の問題が
解消される。A metal wire having an elongation at room temperature of 60% or less in the annealed state is significantly work-hardened as it is,
Since the wire is hardened, the oxide film formed on the surface of the ball is less likely to be broken by the above-mentioned thermocompression bonding or ultrasonic bonding, which makes bonding difficult. Furthermore, since the vicinity of the joint is softened by the heating during joining as described above,
Especially, the local deformation rate is large. It has been found that a metal wire having such an elongation needs to be annealed and soft. By annealing, the wire itself becomes soft as a whole, there is no local deformation, and problems such as disconnection are eliminated.

【００１０】[0010]

【作用】ワイヤは、室温の比抵抗が１５μΩcm以下のも
のが好ましく、Ａｌ，Ｃｕ，Ａｇ，Ｎｉ，Ｍｏ，Ｐｄ，
Ｐｔ，Ｚｒ，Ｔｉ，Ｎｂ及びＴｈから選ばれたものが好
ましい。特に、Ａｌ，Ｎｉ，Ｃｕ，Ｐｄ及びＡｇ線が好
ましい。The wire preferably has a specific resistance at room temperature of 15 μΩcm or less, such as Al, Cu, Ag, Ni, Mo, Pd,
Those selected from Pt, Zr, Ti, Nb and Th are preferable. Particularly, Al, Ni, Cu, Pd and Ag wires are preferable.

【００１１】ボンデングには、ボールボンデング及びウ
ェッジボンデングがあり、超音波接合又は熱圧着によっ
て行われるが、回路素子が半導体素子である場合は、接
合間隔に制限があるのでボールボンデングが好ましく、
外部端子の場合は、高能率のウェッジボンデイングが好
ましい。ボールは、キャピラリーに保持されたワイヤ先
端を放電，水素火炎，プラズマ，アーク，レーザービー
ム等の加熱溶融し、自らの張力によって形成される。特
に、ワイヤ自体と他の電極との間にアーク放電させて形
成させる方法が好ましい。このアーク放電はワイヤをマ
イナスとして行うことによりその表面に酸化膜のない清
浄なボールができるとともに偏心のないボールが形成さ
れる。また、アーク放電において正及び負の少なくとも
一方のパルス電流を流すこともでき、このパルス電流に
よってボール形成に必要な適正なアーク発生時間をコン
トロールすることができる。正負の電流を流す場合に
は、クリーニングに必要な時間とボール形成に必要な時
間とを正負の時間比を変えることによってコントロール
することができる。クリーニングに必要な時間（放電時
間の１０〜３０％）は放電時間のうちのほんのわずかで
よい。Bonding includes ball bonding and wedge bonding, which are performed by ultrasonic bonding or thermocompression bonding. However, when the circuit element is a semiconductor element, the bonding interval is limited, so ball bonding is preferable. ,
For external terminals, high efficiency wedge bonding is preferred. The ball is formed by its own tension by melting the tip of the wire held by the capillary by heating, melting by heating with hydrogen flame, plasma, arc, laser beam, and the like. In particular, a method of arc discharge between the wire itself and another electrode is preferable. By performing this arc discharge with a negative wire, a clean ball without an oxide film is formed on the surface and a ball without eccentricity is formed. Further, at least one of positive and negative pulse current can be passed in the arc discharge, and the appropriate arc generation time necessary for ball formation can be controlled by this pulse current. When a positive / negative current is passed, the time required for cleaning and the time required for ball formation can be controlled by changing the positive / negative time ratio. The time required for cleaning (10-30% of the discharge time) may be only a small part of the discharge time.

【００１２】ボール形成における加熱溶融雰囲気は非酸
化性雰囲気が好ましい。特に、不活性ガス中に少量、好
ましくは５〜１５体積％の還元性ガス（例えば水素ガ
ス）を含むものが好ましい。この還元性ガスを含む雰囲
気は、Ａｌ，Ｔｉ，Ｎｂ，Ｚｒ等の酸素との親和力の高
い金属で好ましい。特にＡｌは水素ガスを５〜１５体積
％を含むものが好ましい。The heating and melting atmosphere in ball formation is preferably a non-oxidizing atmosphere. In particular, an inert gas containing a small amount, preferably 5 to 15% by volume, of a reducing gas (for example, hydrogen gas) is preferable. The atmosphere containing the reducing gas is preferably a metal having a high affinity with oxygen such as Al, Ti, Nb, and Zr. Particularly, Al preferably contains hydrogen gas in an amount of 5 to 15% by volume.

【００１３】ボール径は基本的には任意であるがワイヤ
径の１.５ 〜４倍が好ましく、特に２.５〜３.５倍が好
ましい。The ball diameter is basically arbitrary, but is preferably 1.5 to 4 times the wire diameter, and particularly preferably 2.5 to 3.5 times.

【００１４】ワイヤの太さは、金属の種類によって異な
るが、直径２０〜１００μｍが好ましい。一例で、Ａｌ
は５０μｍ、Ｃｕは３０μｍ程度であり、比抵抗等を考
慮してワイヤ径が選定される。The thickness of the wire varies depending on the kind of metal, but the diameter is preferably 20 to 100 μm. In one example, Al
Is about 50 μm and Cu is about 30 μm, and the wire diameter is selected in consideration of specific resistance and the like.

【００１５】焼なまし温度は、金属の種類によって異な
るが、再結晶温度以上であることが好ましく、特に弾性
変形しない程度にほぼ完全に焼なましされる温度で完全
焼なましするのが好ましい。ワイヤは局部的に硬さが異
なると前述のように局部的な変形を生じるので、全体に
同じ硬さを有するように軟化していることが好ましい。
焼なまし温度は、一例として、Ａｌ（アルミニウム）１
５０〜４００℃，Ｃｕ（銅）４００〜６００℃，Ｎｉ
（ニッケル）６５０〜８００℃，Ａｇ(銀)２５０〜４０
０℃，Ｔｉ（チタン）４００〜１１００℃，Ｍｏ（モリ
ブデン）１０００〜１１００℃，Ｐｄ（パラジウム），
Ｐｔ（白金）８００〜１０００℃が好ましい。The annealing temperature varies depending on the type of metal, but is preferably not less than the recrystallization temperature, and it is particularly preferable to perform the complete annealing at a temperature at which the annealing is almost complete without elastic deformation. . Since the wire is locally deformed as described above when the hardness is locally different, it is preferable that the wire is softened so as to have the same hardness as a whole.
The annealing temperature is, for example, Al (aluminum) 1
50 to 400 ° C, Cu (copper) 400 to 600 ° C, Ni
(Nickel) 650-800 ° C, Ag (silver) 250-40
0 ° C, Ti (titanium) 400 to 1100 ° C, Mo (molybdenum) 1000 to 1100 ° C, Pd (palladium),
Pt (platinum) is preferably 800 to 1000 ° C.

【００１６】ワイヤは加工したままのものを回路素子に
接合するときに焼なましすることができるが、予め焼な
ましされたものをボンデングする方がはるかに能率的で
ある。The wire can be annealed when the as-processed one is bonded to the circuit element, but it is much more efficient to bond the pre-annealed one.

【００１７】回路素子に接合後のワイヤはキャピラリー
に保持された形で引っ張ることによって回路素子の接合
部近傍で切断される。この切断はワイヤ自体全体が軟か
いので、回路素子近傍で切断するのが困難となる。カッ
ターで切断するのが好ましい。The wire after being bonded to the circuit element is pulled near the bonding portion of the circuit element by pulling the wire while being held by the capillary. Since the entire wire itself is soft in this cutting, it is difficult to cut in the vicinity of the circuit element. It is preferable to cut with a cutter.

【００１８】ワイヤは前述のように非常に細径で軟かい
ので、これを保護するために半導体素子とワイヤと外部
端子の一部を樹脂又はセラミックで被うことが行われ
る。樹脂は液体をキャスティング又はモールドし硬化さ
せ、セラミックスは通常の方法でキャップシール接合さ
れる。Since the wire has a very small diameter and is soft as described above, the semiconductor element, the wire, and a part of the external terminal are covered with resin or ceramic to protect the wire. The resin is cast or molded into a liquid and cured, and the ceramics are cap-seal bonded in a conventional manner.

【００１９】本発明は、焼なまし状態で室温の伸び率が
６０％以下である金属からなるワイヤであって、且つ焼
なましされていることを特徴とするボンデング用ワイヤ
にある。The present invention is a wire made of a metal having an elongation at room temperature of 60% or less in an annealed state and is annealed.

【００２０】本発明のワイヤはボールボンデング用ワイ
ヤとして特に好ましい特性を有する。The wire of the present invention has particularly preferable characteristics as a wire for ball bonding.

【００２１】焼なましは、非酸化性雰囲気中で、再結晶
温度以上で行う必要がある。特に弾性変形が起こらない
程度に完全焼なまし処理するのが好ましい。The annealing needs to be performed in a non-oxidizing atmosphere at a temperature higher than the recrystallization temperature. In particular, it is preferable to perform a complete annealing treatment so that elastic deformation does not occur.

【００２２】[0022]

【実施例】実施例１ 図４は本発明の焼なましされたＣｕワイヤ１をセラミッ
クパッケージ型半導体装置に適用したものの断面図であ
る。Ｃｕワイヤは直径３０μｍで、Ａｒガス中で４００
℃，１時間加熱の完全焼なまし処理されたものである。
ボンデングは、通常のウェッジボンダーによって超音波
接合したものである。図に示すように、本発明によれ
ば、ワイヤは軟いため接合自体もきわめて容易であるば
かりでなく、全体に軟いため所望のループ形状に接合で
きることが確信された。４はＡｇめっき１０されたＣｕ
リードフレーム、８は半導体素子３の表面に形成された
Ａｌ蒸着膜による電極、７，１１はセラミックベース、
９は低融点ガラスである。EXAMPLE 1 FIG. 4 is a cross-sectional view of the annealed Cu wire 1 of the present invention applied to a ceramic package type semiconductor device. The Cu wire has a diameter of 30 μm and is 400 in Ar gas.
It was completely annealed by heating at ℃ for 1 hour.
Bonding is ultrasonic bonding using a normal wedge bonder. As shown in the drawings, according to the present invention, it was convinced that not only the wire itself is extremely easy to be joined due to the softness, but also the wire is so soft as to be joined into a desired loop shape. 4 is Cu plated with Ag 10
A lead frame, 8 are electrodes made of an Al vapor deposition film formed on the surface of the semiconductor element 3, 7 and 11 are ceramic bases,
9 is a low melting point glass.

【００２３】図に示されるように、本発明の半導体装置
は、ボンデングワイヤの局部的な変形がなく、また、所
望のループ形状が得られることから、素子３とリードフ
レーム４とに段差があってもワイヤが素子に短絡するよ
うなことがない。As shown in the figure, in the semiconductor device of the present invention, there is no local deformation of the bonding wire and a desired loop shape is obtained, so that there is a step between the element 3 and the lead frame 4. Even if there is, the wire does not short-circuit with the element.

【００２４】実施例２ 図５は本発明の焼なましされたＡｌワイヤ１をレジンモ
ールド型半導体装置に適用したものの断面図である。Ａ
ｌワイヤは直径５０μｍで、Ｎ2 ガス中で２５０℃，１
時間加熱の完全熱なまし処理されたものである。Ａｌワ
イヤ１はＡｌ蒸着膜８が設けられた半導体素子３にボー
ルボンデングされ、Ａｇめっき層１０が設けられたリー
ドフレーム４にはウェッジボンデングされている。ボー
ルボンデングされた後、ＳｉＯ２ 等の保護皮膜１３が
設けられ、その後型を使って液状の樹脂を流し込み、硬
化させることにより図の半導体装置が形成される。Example 2 FIG. 5 is a sectional view of the annealed Al wire 1 of the present invention applied to a resin mold type semiconductor device. A
The l-wire has a diameter of 50 μm and is heated in N 2 gas at 250 ° C.
It is a fully heat-annealed material that is heated for an hour. The Al wire 1 is ball bonded to the semiconductor element 3 provided with the Al vapor deposition film 8 and wedge bonded to the lead frame 4 provided with the Ag plating layer 10. After being ball-bonded, a protective film 13 such as SiO 2 is provided, and then a liquid resin is poured using a mold and cured to form the semiconductor device shown in the figure.

【００２５】ボンデングは図３に示すキャピラリー２に
Ａｌワイヤを押し出し、放電による方法によって行われ
る。前述のＡｌワイヤを、真空排気した後、７％（体
積）の水素を含むＡｒガス雰囲気で置換した雰囲気中
で、１,０００Ｖ,１０〜２０ｍＡの放電条件で放電させ
て、その先端にボールを形成させた。放電は、他に設け
たＷ電極５をワイヤに移動させることによって行われ、
その時間を電極の移動速度と、通電をパルス化して適宜
定められた周波数によってコントロールした。また、通
電は正負のパルス電流によって行い、ワイヤがクリーニ
ングされる側の通電を少なくして行った。得られたボー
ルをキャピラリー２によって半導体素子に超音波接合
し、次いで、他端をリードフレーム４に同じく超音波接
合した。Bonding is performed by extruding an Al wire into the capillary 2 shown in FIG. 3 and discharging. The above Al wire was evacuated and then discharged under an electric discharge condition of 1,000 V and 10 to 20 mA in an atmosphere in which it was replaced with an Ar gas atmosphere containing 7% (volume) of hydrogen, and a ball was placed at its tip. Formed. The discharge is performed by moving the W electrode 5 provided elsewhere to the wire,
The time was controlled by the moving speed of the electrode and the frequency appropriately determined by pulsing the energization. The energization was performed by positive and negative pulse currents, and the energization on the side where the wire was cleaned was reduced. The obtained ball was ultrasonically bonded to the semiconductor element by the capillary 2, and then the other end was also ultrasonically bonded to the lead frame 4.

【００２６】この方法によって得られたボールはわずか
にワイヤ軸方向に長いたまご形のものが形成されたが、
良好な球に近いものであった。このボールはワイヤ自体
の硬さとほぼ等しく、図に示すようにボール近傍での局
部的な変形がなく、きれいなループ状のワイヤボンデン
グが得られることが確認された。また、ウェッジボンデ
ング後のワイヤの切断はキャピラリーを持ち上げて引張
ることによって行われるが、その切断もワイヤが軟いた
めきわめて容易で、更にその引張りによってボンデング
部分を剥離するようなことも全く起こらなかった。The ball obtained by this method was formed into an egg shape slightly elongated in the wire axis direction.
It was close to a good ball. It was confirmed that this ball had almost the same hardness as the wire itself, and there was no local deformation in the vicinity of the ball as shown in the figure, and a clean loop-shaped wire bonding could be obtained. Further, the cutting of the wire after wedge bonding is performed by lifting the capillary and pulling it, but the cutting is also extremely easy because the wire is soft, and the pulling did not cause peeling of the bonding part at all. .

【００２７】このように本発明の半導体装置はボールボ
ンデングにおいて、ワイヤの局部的な変形がなく、所望
のループが得られることから局部的な変形による断線の
心配がなく、またワイヤが素子に短絡するような事故も
生じないものであった。As described above, in the ball bonding of the semiconductor device of the present invention, there is no local deformation of the wire and a desired loop can be obtained, so there is no fear of disconnection due to the local deformation, and the wire becomes an element. There were no accidents such as short circuits.

【００２８】実施例３ 直径３０μｍの加工のままのＣｕワイヤと、それをＡｒ
ガス中で４００℃，１時間加熱による完全焼なまし処理
を施したものについて、図２に示す方法でワイヤ先端に
ボールを形成させた。Example 3 As-processed Cu wire having a diameter of 30 μm and Ar wire
Balls were formed at the tip of the wire by the method shown in FIG. 2 for the material that was completely annealed by heating at 400 ° C. for 1 hour in gas.

【００２９】放電は、電圧１０００Ｖ，電流１０〜２０
ｍＡ、及びＡｒガス中で行った。放電時間は前述のよう
にＷ電極５の移動速度及びパルスの周波数によってコン
トロールした。The discharge is 1000 V in voltage and 10 to 20 in current.
It was carried out in mA and Ar gas. The discharge time was controlled by the moving speed of the W electrode 5 and the pulse frequency as described above.

【００３０】上述と同様に直径５０μｍの加工したまま
のＡｌワイヤと、それを２５０℃で、１時間加熱による
完全焼なまし処理したものについて同じくボールを形成
させた。放電条件はＣｕとほぼ同じである。Similarly to the above, balls were formed on the as-processed Al wire having a diameter of 50 μm and the one completely heat-annealed at 250 ° C. for 1 hour. The discharge conditions are almost the same as for Cu.

【００３１】Ｃｕ及びＡｌワイヤのいずれも５０個ずつ
ボールを形成し、ボールのくびれ及び偏心が生じたもの
の数を調べ、その割合を求めた。その結果を、図６に示
す。図に示す如く、加工したままのＡｌワイヤはくびれ
が６０％、偏心が５０％生じるのに対し、焼なましたも
のはくびれが７％及び偏心が数％程度で、ワイヤ軸に対
して対象なまるいボールが形成されることが判明した。
また、Ｃｕワイヤは加工のままでもＡｌワイヤより優れ
ているが、焼なまししたものはくびれ及び偏心がほとん
ど生じなかった。Fifty balls were formed for each of the Cu and Al wires, and the number of balls with constrictions and eccentricity was examined and the ratio thereof was determined. The result is shown in FIG. As shown in the figure, the as-processed Al wire has 60% constriction and 50% eccentricity, while the annealed one has 7% constriction and a few% eccentricity. It was found that a round ball was formed.
Further, although the Cu wire is superior to the Al wire in the as-processed state, the annealed one showed almost no necking and eccentricity.

【００３２】実施例４ 前述の焼なまししたＡｌワイヤについてガス雰囲気を変
えて前述した方法と同様にボールの形成を検討した。ガ
ス雰囲気として、Ａｒ中に５０体積％までのＨ2 ガスを
混合させてその混合割合とボールの形成状況との関係を
調べた結果、Ｈ2 量が５〜１５体積％のときボールの形
成状況が最も良好であった。この場合の通電は、前述の
パルス電流のほか、ワイヤを正又は負のものも同様に行
った。その結果、パルス電流によるものが、ボール径の
大きさのコントロールが容易で、かつ清浄なボールが得
られた。Example 4 With respect to the above-mentioned annealed Al wire, the gas atmosphere was changed and the formation of balls was examined in the same manner as the above-mentioned method. As a gas atmosphere, up to 50% by volume of H 2 gas was mixed in Ar, and the relationship between the mixing ratio and the state of ball formation was examined. As a result, the state of ball formation was found when the amount of H 2 was 5 to 15% by volume. Was the best. In addition to the above-mentioned pulse current, the current was also applied to the wire with positive or negative wires. As a result, it was possible to obtain a clean ball by controlling the diameter of the ball by using the pulse current.

【００３３】実施例５ Ａｇ３０μｍ，Ｎｉ５０μｍ，Ｐｄ５０μｍ，Ｔｉ５０
μｍ，Ｐｔ５０μｍのワイヤを用い、Ａｇ３００℃，Ｎ
ｉ７００℃，Ｐｄ，Ｐｔ，Ｔｉ９００℃，１時間、いず
れもＡｒガス中で焼なましを行い、Ａｒガス雰囲気中で
図３に示す方法で同様にワイヤを負として放電によって
ボールを形成させた。金属の種類によって放電電流及び
時間を変えて行った結果、いずれのワイヤも弾性変形が
ないので、図３（ｂ）に示すようなワイヤの屈曲した押
し出しが起こらず、きわめて良好なボールが形成される
ことが確認された。Example 5 Ag30 μm, Ni50 μm, Pd50 μm, Ti50
μm, Pt 50 μm wire, Ag 300 ° C., N
i 700 ° C., Pd, Pt, Ti 900 ° C., 1 hour each was annealed in Ar gas, and a wire was similarly negative in the Ar gas atmosphere by the method shown in FIG. 3 to form balls by electric discharge. As a result of changing the discharge current and the time depending on the type of metal, none of the wires is elastically deformed, so that the bent extrusion of the wires as shown in FIG. 3 (b) does not occur and a very good ball is formed. It was confirmed that

【００３４】[0034]

【発明の効果】以上、本発明によれば、ワイヤの接合部
で、局部的な変形の生じないワイヤボンデングが得ら
れ、断線のない電気的装置、特に信頼性の高い半導体装
置が得られる優れた効果が得られる。As described above, according to the present invention, it is possible to obtain a wire bonding that does not cause local deformation at a wire joining portion, and to obtain an electric device without disconnection, particularly a highly reliable semiconductor device. Excellent effect can be obtained.

【図面の簡単な説明】[Brief description of drawings]

【図１】従来のワイヤを使用して各々ウェッジボンデン
グ及びボールボンデングした半導体装置の断面図。FIG. 1 is a cross-sectional view of a semiconductor device that is wedge-bonded and ball-bonded using a conventional wire.

【図２】従来のワイヤを使用して各々ウェッジボンデン
グ及びボールボンデングした半導体装置の断面図。FIG. 2 is a cross-sectional view of a semiconductor device that is respectively wedge-bonded and ball-bonded using a conventional wire.

【図３】従来のワイヤを使用して放電によってボールを
形成する状況を示した断面図。FIG. 3 is a cross-sectional view showing a state in which a ball is formed by electric discharge using a conventional wire.

【図４】本発明のワイヤを使用してウェッジボンデング
したセラミックパッケージ型半導体装置の断面図。FIG. 4 is a sectional view of a ceramic package type semiconductor device wedge-bonded using the wire of the present invention.

【図５】本発明のワイヤを使用してボールボンデングし
たレジンモールド型半導体装置の断面図。FIG. 5 is a cross-sectional view of a resin mold type semiconductor device ball-bonded using the wire of the present invention.

【図６】従来のワイヤ及び本発明のワイヤの偏心及びく
びれ発生率との関係を示す棒グラフである。FIG. 6 is a bar graph showing the relationship between the eccentricity and the constriction occurrence rate of the conventional wire and the wire of the present invention.

【符号の説明】[Explanation of symbols]

１…ワイン、２…キャピラリー、３…半導体素子、４…
リードフレーム、５…Ｗ電極、７，１１…セラミックベ
ース、８…Ａｌ蒸着膜、９…低融点ガラス、１０…Ａｇ
めっき層、１２…樹脂。1 ... Wine, 2 ... Capillary, 3 ... Semiconductor element, 4 ...
Lead frame, 5 ... W electrode, 7, 11 ... Ceramic base, 8 ... Al vapor deposition film, 9 ... Low melting point glass, 10 ... Ag
Plating layer, 12 ... Resin.

───────────────────────────────────────────────────── フロントページの続き (72)発明者 飯塚 富雄 茨城県日立市幸町３丁目１番１号 株式会 社日立製作所日立研究所内 (72)発明者 玉村 建雄 茨城県日立市幸町３丁目１番１号 株式会 社日立製作所日立研究所内   ─────────────────────────────────────────────────── ─── Continued front page    (72) Inventor Tomio Iizuka             3-1-1 Sachimachi Hitachi City, Ibaraki Prefecture Stock Association             Inside Hitachi Research Laboratory, Hitachi, Ltd. (72) Inventor Takeo Tamamura             3-1-1 Sachimachi Hitachi City, Ibaraki Prefecture Stock Association             Inside Hitachi Research Laboratory, Hitachi, Ltd.

Claims (7)

【特許請求の範囲】[Claims] 【請求項１】再結晶温度以上で全体が焼きなましされた
Ｃｕ又はＡｌよりなることを特徴とするボンデング用ワ
イヤ。1. A wire for bonding, characterized in that it is entirely made of Cu or Al annealed at a recrystallization temperature or higher. 【請求項２】請求項１記載のボンデング用ワイヤにおい
て、前記ワイヤが、実質的に弾性変形しない程度に完全
焼きなましされていることを特徴とするボンデング用ワ
イヤ。2. The bonding wire according to claim 1, wherein the wire is completely annealed to such an extent that it is not substantially elastically deformed. 【請求項３】請求項１記載のボンデング用ワイヤにおい
て、前記ワイヤの太さが、２０〜１００μｍであること
を特徴とするボンデング用ワイヤ。3. The bonding wire according to claim 1, wherein the thickness of the wire is 20 to 100 μm. 【請求項４】請求項１記載のボンデング用ワイヤにおい
て、前記ワイヤは、室温における比抵抗が１５μΩcm以
下であることを特徴とするボンデング用ワイヤ。4. The bonding wire according to claim 1, wherein the wire has a specific resistance at room temperature of 15 μΩcm or less. 【請求項５】請求項１記載のボンデング用ワイヤにおい
て、前記ワイヤが、焼きなまし状態で室温における伸び
が６０％以下であることを特徴とするボンデング用ワイ
ヤ。5. The bonding wire according to claim 1, wherein the wire has an elongation at room temperature of 60% or less in an annealed state. 【請求項６】Ｃｕ又はＡｌよりなる金属ワイヤを再結晶
温度以上で全体を焼きなましすることを特徴とするボン
デング用ワイヤの製法。6. A method of manufacturing a wire for bonding, which comprises annealing a whole metal wire made of Cu or Al at a recrystallization temperature or higher. 【請求項７】請求項６記載のボンデング用ワイヤの製法
において、前記焼きなましする温度が、１５０〜６００
℃であることを特徴とするボンデング用ワイヤの製法。7. The method of manufacturing a bonding wire according to claim 6, wherein the annealing temperature is 150 to 600.
A manufacturing method of a wire for bonding, characterized in that the temperature is ℃.
JP4006148A 1992-01-17 1992-01-17 Bonding wire and its manufacturing method Expired - Lifetime JPH0719790B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4006148A JPH0719790B2 (en) 1992-01-17 1992-01-17 Bonding wire and its manufacturing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4006148A JPH0719790B2 (en) 1992-01-17 1992-01-17 Bonding wire and its manufacturing method

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP57036468A Division JPS58154241A (en) 1982-03-10 1982-03-10 Electric apparatus and preparation thereof and bonding wire used thereto and preparation thereof

Publications (2)

Publication Number Publication Date
JPH0536747A true JPH0536747A (en) 1993-02-12
JPH0719790B2 JPH0719790B2 (en) 1995-03-06

Family

ID=11630440

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4006148A Expired - Lifetime JPH0719790B2 (en) 1992-01-17 1992-01-17 Bonding wire and its manufacturing method

Country Status (1)

Country Link
JP (1) JPH0719790B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10384314B2 (en) 2015-04-22 2019-08-20 Hitachi Metals, Ltd. Metal particle and method for producing the same, covered metal particle, and metal powder

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10384314B2 (en) 2015-04-22 2019-08-20 Hitachi Metals, Ltd. Metal particle and method for producing the same, covered metal particle, and metal powder

Also Published As

Publication number Publication date
JPH0719790B2 (en) 1995-03-06

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