JP4398816B2 - Bonding wire manufacturing method - Google Patents

Bonding wire manufacturing method Download PDF

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Publication number
JP4398816B2
JP4398816B2 JP2004212827A JP2004212827A JP4398816B2 JP 4398816 B2 JP4398816 B2 JP 4398816B2 JP 2004212827 A JP2004212827 A JP 2004212827A JP 2004212827 A JP2004212827 A JP 2004212827A JP 4398816 B2 JP4398816 B2 JP 4398816B2
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JP
Japan
Prior art keywords
wire
ball
bonding
coating layer
fillet
Prior art date
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Expired - Fee Related
Application number
JP2004212827A
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Japanese (ja)
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JP2006032833A (en
Inventor
悟 座間
敬輔 北里
秀雄 金子
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
THE FURUKAW ELECTRIC CO., LTD.
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THE FURUKAW ELECTRIC CO., LTD.
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Priority to JP2004212827A priority Critical patent/JP4398816B2/en
Publication of JP2006032833A publication Critical patent/JP2006032833A/en
Application granted granted Critical
Publication of JP4398816B2 publication Critical patent/JP4398816B2/en
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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)

Description

本発明は半導体のチップ電極と外部リードとの接続のために使用するボンディングワイ
ヤーの製造方法に関するものである。
The present invention relates to a method for manufacturing a bonding wire used for connection between a semiconductor chip electrode and an external lead.

半導体のチップ電極と外部リードとの接続の方法については、金線のボンディングワイヤーを用いたボールボンディング法が一般的である。ボンディングワイヤーの製造は一般的に、ワイヤーを所定の径まで伸線し、次いで焼鈍を施してワイヤーの機械的特性を調節する。被覆層を有するワイヤーを製造する場合は、所定の径まで伸線してメッキを施すか、もしくは、伸線工程と伸線工程の間にメッキを被覆し所定の径まで伸線する。その後ワイヤーを焼鈍することで、ワイヤーの伸びと強度を調節する。   As a method for connecting a semiconductor chip electrode and an external lead, a ball bonding method using a gold wire bonding wire is generally used. In the manufacture of a bonding wire, the wire is generally drawn to a predetermined diameter and then annealed to adjust the mechanical properties of the wire. When manufacturing a wire having a coating layer, the wire is drawn to a predetermined diameter and plated, or the plating is applied between the wire drawing process and the wire drawing process, and the wire is drawn to a predetermined diameter. The wire is then annealed to adjust the elongation and strength of the wire.

半導体のチップ電極、および、リード部とボンディングワイヤーとの接続は以下のように行う。すなわち、キャピラリ挿通されたワイヤー先端と電極トーチ間を放電させ、ワイヤー先端を溶融させボールを形成する。その後半導体電極にボールを押圧しつつキャピラリに超音波を印加して接合する。ついで、キャピラリをリード部に移動し、リード部にて超音波を印加してワイヤーを接合し、ワイヤーボンディング工程を終了する。この際、チップ電極とリード間を接続しているワイヤーの形状をループと呼び、チップ電極接合後キャピラリの移動によってワイヤーに歪みを与え、隣り合うワイヤー同士がショートしないようにループ形成する。   The connection between the semiconductor chip electrode and the lead portion and the bonding wire is performed as follows. That is, the wire tip inserted through the capillary is discharged between the electrode torch and the wire tip is melted to form a ball. Thereafter, ultrasonic waves are applied to the capillaries while pressing the balls against the semiconductor electrodes to join them. Next, the capillary is moved to the lead portion, ultrasonic waves are applied at the lead portion to join the wires, and the wire bonding step is completed. At this time, the shape of the wire connecting the chip electrode and the lead is called a loop, and the wire is distorted by the movement of the capillary after joining the chip electrode, and the loop is formed so that adjacent wires do not short-circuit.

従来、ボンディングワイヤーの芯材として用いられていた金は高価であったため、価格の安い銅が用いられることが多くなった。
しかし銅は大気中で表面が酸化するため、ボンディング接合性が悪かった。このため、銅の酸化防止のため、銅の表面に耐食性金属のメッキを施すことが行われた。 Conventionally, gold used as a core material for bonding wires has been expensive, so that cheap copper is often used.
However, since the surface of copper oxidizes in the atmosphere, the bondability was poor. For this reason, in order to prevent copper oxidation, the copper surface was plated with a corrosion-resistant metal.

銅ボンディングワイヤーの表面に金の被覆層をメッキした例がある（例えば、特許文献１）。ただし、金を被覆するとボールが小径になるほど形状を真球にすることが困難となり、チップ電極と外部リードとの接続信頼性が低下してしまう。   There is an example in which a gold coating layer is plated on the surface of a copper bonding wire (for example, Patent Document 1). However, when gold is coated, the smaller the ball, the more difficult it is to make the ball into a true sphere, and the connection reliability between the chip electrode and the external lead is lowered.

銅ボンディングワイヤーの表面にパラジウム、白金、ニッケルの被覆層をメッキした例がある（例えば、特許文献２）。この場合はボールが小径でも形状を真球にすることが容易である。また、ボール形成において、トーチ電源の電圧を制御する例がある（例えば、特許文献３）。   There is an example in which a surface of a copper bonding wire is plated with a coating layer of palladium, platinum, or nickel (for example, Patent Document 2). In this case, it is easy to make a true sphere even if the ball has a small diameter. In addition, there is an example in which the voltage of the torch power source is controlled in ball formation (for example, Patent Document 3).

特開昭62-97360号公報JP-A 62-97360 特開2004-14884号公報JP 2004-14884 A 特開平10-41336号公報Japanese Patent Laid-Open No. 10-41336

近年、半導体パッケージの薄型化の要求が強く、ワイヤーボンディングで形成されるループを低背化する必要がある。この時、図２に示すボールネック部に大きな歪みが加わり、ループ形成中、もしくは、その後の工程にてワイヤーが切断するという問題が発生した。また、メッキ厚さが薄いと、焼鈍工程でメッキ被覆層に芯材が拡散してしまい、ワイヤーが酸化しやすくなるという問題があった。   In recent years, there is a strong demand for thinner semiconductor packages, and it is necessary to reduce the height of a loop formed by wire bonding. At this time, a large distortion was applied to the ball neck shown in FIG. 2, and the wire was cut during the loop formation or in the subsequent process. Further, when the plating thickness is thin, the core material diffuses into the plating coating layer in the annealing process, and there is a problem that the wire is easily oxidized.

本発明の目的は、薄型の半導体パッケージの製造において、ワイヤーボンディング時に
切断せず、接続信頼性に優れたボンディングワイヤーを実現するための製造方法を提供す
るものである。
An object of the present invention, in the manufacture of thin semiconductor package, there is provided a manufacturing method for realizing the Bonn loading wire over which without cutting during wire bonding, good connection reliability.

発明者らは、銅からなる芯材に金または銀の被覆層を施したワイヤーを製造し、熱処理方法、被覆層厚さ、放電方法を鋭意研究した結果、ワイヤーとボールの接合強度が向上し、切断しにくいワイヤーを発明するに至った。   The inventors have manufactured a wire in which a core layer made of copper is coated with a gold or silver coating layer, and as a result of earnest research on the heat treatment method, coating layer thickness, and discharge method, the bonding strength between the wire and the ball is improved. It came to invent the wire which is hard to cut | disconnect.

すなわち、本発明は、
（１）ボンディングワイヤー先端部とトーチ電極との間に電圧を印加して、両者間の放電
によりワイヤー先端部を溶融させてフィレットを有したボールを形成し、前記ボールを半
導体電極に接合して前記ボンディングワイヤーと前記半導体電極とを電気的に接続するた
めに用いられる半導体装置用ボンディングワイヤーを製造する方法において、銅及び不可
避不純物からなる前記ボンディングワイヤーの芯材を最終焼鈍した後、耐酸化性の金属か
らなる被覆層を被覆し、前記被覆層は、厚さが１０Å以上であり、かつ前記ボンディング
ワイヤーの断面における、前記被覆層の面積と前記芯材の面積の関係をＸ＝被覆層面積／
（芯材面積＋被覆層面積）とした場合、Ｘが０．００５以下となるように形成し、前記ボ
ールの形成時に、前記ワイヤー先端部が溶融して形成される前記芯材と前記被覆層からな
る合金は、前記芯材及び前記被覆層よりも融点が低く、かつ、前記ボールの形成時に、溶
融した前記合金が前記ワイヤー界面に濡れ上がることにより前記フィレットを形成するこ
とを特徴とするボンディングワイヤーの製造方法。
（２）前記被覆層が金及び不可避不純物からなることを特徴とする（１）に記載のボンデ
ィングワイヤーの製造方法。
を、提供するものである。
That is, the present invention
(1) by applying a voltage between the bonding wire tip and the torch electrode, by melting the wire tip to form a ball having a fillet by discharge between them, and bonding the ball to the semiconductor electrode and electrically connecting the semiconductor electrode and the bonding wire
A method of manufacturing a semiconductor device bonding wire used in order, copper and No
After the final annealing of the core material of the bonding wire made of impurities, it is an oxidation-resistant metal.
The covering layer has a thickness of 10 mm or more, and the bonding
In the cross section of the wire, the relationship between the area of the covering layer and the area of the core is X = covering layer area /
When (core material area + covering layer area), X is formed to be 0.005 or less.
When the wire is formed, the wire tip is melted from the core material and the coating layer.
The alloy has a melting point lower than that of the core material and the coating layer, and melts at the time of forming the ball.
Method of manufacturing a bonding wire, wherein the this <br/> passing through the said alloy to form the fillet by up wet the wire interface.
(2) The method for manufacturing a bonding wire according to (1), wherein the coating layer is made of gold and inevitable impurities .
Is provided.

本発明によれば、ボールネック部にフィレットが形成され、ワイヤーとボールの接合強度が向上し、ワイヤーが切断しにくくなる。したがって、薄型半導体パッケージにおいても優れた接合信頼性を有する。さらに、本ワイヤーは、ワイヤーの熱処理調質後に被覆層を設ける工程を追加することで、被覆層が十分薄くても、芯材ワイヤーが室温酸化するのを防ぎ、ワイヤーの長期保管が可能となった。同時に、低温環境下でのワイヤーボンディングが可能となった。   According to the present invention, a fillet is formed in the ball neck, the bonding strength between the wire and the ball is improved, and the wire is difficult to cut. Therefore, it has excellent bonding reliability even in a thin semiconductor package. Furthermore, this wire prevents the core wire from oxidizing at room temperature even if the coating layer is sufficiently thin by adding a step of providing a coating layer after the heat treatment of the wire, enabling long-term storage of the wire. It was. At the same time, wire bonding in a low temperature environment has become possible.

本願発明の実施態様の一例として図１が挙げられる。以下、本願発明のワイヤーを説明する。
本願発明のボンディングワイヤーは、直径１〜２０ｍｍ程度の銅線を冷間にて伸線し、最終焼鈍により強度を調整した後に、被覆層を形成する。この方法により、被覆層が薄くても耐酸化性に優れるワイヤーを作製することができる。 FIG. 1 is an example of an embodiment of the present invention. Hereinafter, the wire of the present invention will be described.
The bonding wire of the present invention forms a coating layer after cold drawing a copper wire having a diameter of about 1 to 20 mm and adjusting the strength by final annealing. By this method, a wire having excellent oxidation resistance can be produced even if the coating layer is thin.

前記伸線は冷間にて９９．９〜９９．９９９９％で行う。あるいは冷間で７０〜９９．９％で伸線し、３００〜５００℃で１０分〜１時間の焼鈍を繰り返してもかまわない。また走間焼鈍の場合は４００〜５００℃で０．５〜２秒加熱する。次いで温度３００〜５００℃で１０分〜１時間の最終焼鈍処理を行い、次いで被覆層を形成する。走間焼鈍の場合は４００〜５００℃で０．５〜２秒加熱する。ワイヤーの芯材は、金はコストが高いため、銅及び不可避不純物、あるいは銀及び不可避不純物が良い。   The wire drawing is performed at a cold temperature of 99.9 to 99.9999%. Alternatively, it may be cold drawn at 70 to 99.9% and repeated annealing at 300 to 500 ° C. for 10 minutes to 1 hour. In the case of running annealing, heating is performed at 400 to 500 ° C. for 0.5 to 2 seconds. Next, a final annealing treatment is performed at a temperature of 300 to 500 ° C. for 10 minutes to 1 hour, and then a coating layer is formed. In the case of running annealing, heating is performed at 400 to 500 ° C. for 0.5 to 2 seconds. Since the core material of the wire is expensive, copper and inevitable impurities, or silver and inevitable impurities are preferable.

本願発明の被覆層は電気メッキ法により施す。被覆層は耐酸化性の金属で、かつ、芯材と被覆層から形成される合金が、芯材及び被覆層よりも融点が低いことが条件である。ボール形成時に、芯材とメッキ材が合金化して融点が下がるため、溶融部がフィレットを形成するためである。芯材が銅の場合、被覆層は金、銀などがこの条件を満たすが、被覆層が白金、ニッケル、パラジウムであると芯材と被覆層の合金は融点が高いため溶融せずフィレットが形成されない。被覆層は好ましくは金が良い。   The coating layer of the present invention is applied by electroplating. The condition is that the coating layer is an oxidation-resistant metal, and the alloy formed from the core material and the coating layer has a lower melting point than the core material and the coating layer. This is because when the ball is formed, the core material and the plating material are alloyed to lower the melting point, so that the melted portion forms a fillet. When the core material is copper, the coating layer satisfies this condition, such as gold and silver. Not. The coating layer is preferably gold.

被覆層の厚さは大きすぎると、溶融部の濡れ上がり現象が著しくなり、槍形状を呈し、ボンディングができない。またボール部において被覆層と芯材が合金化してボール硬度が増加してしまい、電極やリードとの接続性に劣る。しかし、薄すぎると芯材と被覆層の合金化によるフィレット形成がされない。本願発明のフィレットを形成するためには、被覆層の厚さは１０Å以上とする。１０Å未満ではフィレットが形成されない。好ましくは３０Å以上である。   When the thickness of the coating layer is too large, the phenomenon of wet-up of the melted portion becomes remarkable, and a cocoon shape is formed, so that bonding cannot be performed. In addition, the coating layer and the core material are alloyed in the ball portion to increase the ball hardness, resulting in poor connectivity with electrodes and leads. However, if it is too thin, the fillet cannot be formed by alloying the core material and the coating layer. In order to form the fillet of the present invention, the thickness of the coating layer is 10 mm or more. If it is less than 10 mm, no fillet is formed. Preferably it is 30 mm or more.

本願発明のワイヤーボンディング用ボールの形状を良好にするには、ボンディングワイヤーの断面においてＸ＝被覆層面積／（芯材面積＋被覆層面積）とした場合Ｘは0.005以下とする。前記断面とは、ワイヤーを伸線した方向に垂直な面で切断した面のことを言う。０．００５を超えるとボール形状が球形にならない。好ましくはＸが0.003以下、より好ましくはＸが0.002以下である。   In order to improve the shape of the wire bonding ball of the present invention, X is 0.005 or less when X = covering layer area / (core material area + covering layer area) in the cross section of the bonding wire. The said cross section means the surface cut | disconnected by the surface perpendicular | vertical to the direction where the wire was drawn. If it exceeds 0.005, the ball shape will not be spherical. X is preferably 0.003 or less, more preferably X is 0.002 or less.

なお、本願においてフィレットとは溶融して形成されたボール部とワイヤー非溶融部の界面に形成されたボール支持部を指し、両者の界面が曲面を形成するように溶融部が凝固していることを指す。この場合、少なくともフィレットが存在すればネック部において破断しにくくなる。好ましくはフィレットの曲率半径がボール部の半径と比較して０．０１〜１００倍にあれば良い。より好ましくは０．０５〜１０倍、さらに好ましくは０．１〜５倍である。   In the present application, the fillet refers to a ball support portion formed at the interface between the ball portion formed by melting and the wire non-melting portion, and the melting portion is solidified so that the interface between both forms a curved surface. Point to. In this case, if at least the fillet is present, it is difficult to break at the neck portion. Preferably, the radius of curvature of the fillet is 0.01 to 100 times that of the ball portion. More preferably, it is 0.05-10 times, More preferably, it is 0.1-5 times.

ボール形成には、ある熱量を加える必要があり、放電電流値と放電時間を制御してワイヤー先端部を溶融する。本願発明のボール形成条件は、Ｙ＝放電電流値（ミリアンペア）／放電時間（ミリ秒）とした場合、Ｙが３以上とする。Ｙが３未満であるとボール溶融時間が長くなりボール溶融部がワイヤー非溶融部に著しく濡れ上がる。このため良好なボールが形成できず、電極やリードとの接続性に劣るという問題が起きる。好ましくはＹ≧５、より好ましくはＹ≧７である。   In order to form the ball, it is necessary to apply a certain amount of heat, and the tip of the wire is melted by controlling the discharge current value and the discharge time. The ball forming conditions of the present invention are such that Y is 3 or more, where Y = discharge current value (milliamperes) / discharge time (milliseconds). When Y is less than 3, the ball melting time becomes long, and the ball melting portion is remarkably wetted by the wire non-melting portion. For this reason, a favorable ball | bowl cannot be formed and the problem that it is inferior to an electrode or a lead and a connectivity arises. Preferably Y ≧ 5, more preferably Y ≧ 7.

本願発明例として、９９．９９９％の純度を有する銅を、直径25ミクロンまで伸線加工した。次に、５００℃窒素雰囲気１ｍ長の炉を用いて走間焼鈍をおこない、５０ｍ／分の線速でワイヤー加工歪を除去した。   As an example of the present invention, copper having a purity of 99.999% was drawn to a diameter of 25 microns. Next, running annealing was performed using a furnace having a length of 1 m in a nitrogen atmosphere at 500 ° C., and wire processing strain was removed at a line speed of 50 m / min.

次に、苛性ソーダ、炭酸ソーダ、ケイ酸ソーダからなるアルカリ浴に浸漬し、ワイヤーが陰極になるように電流を5Ａ/ｄｍ2にて１０秒間流し、銅ワイヤー表面の有機物の汚れを落とした。水洗したのち、10％濃度の硫酸浴に１０秒間浸漬し、銅ワイヤー表面の酸化皮膜を除去した。水洗した後、金イオンを含む溶液に浸し、電流１〜４Ａ／dm2にて１〜５秒間の電流を流し、ワイヤーのごく表面のみに金の被覆層を形成した。電流値、ライン速度を変化させ、表１に示す異なるメッキ厚のワイヤーを作製した。   Next, it was immersed in an alkaline bath composed of caustic soda, sodium carbonate, and sodium silicate, and an electric current was applied at 5 A / dm2 for 10 seconds so that the wire became a cathode, thereby removing organic contaminants on the surface of the copper wire. After washing with water, it was immersed in a 10% strength sulfuric acid bath for 10 seconds to remove the oxide film on the surface of the copper wire. After washing with water, it was immersed in a solution containing gold ions, and a current of 1 to 5 seconds was applied at a current of 1 to 4 A / dm 2 to form a gold coating layer only on the very surface of the wire. Wires with different plating thicknesses shown in Table 1 were produced by changing the current value and the line speed.

比較例として、前記本願発明例と同様に銅を伸線、焼鈍、酸洗、水洗後、電気メッキ法によって、金を５Å、５００Åの厚さで施したボンディングワイヤー、パラジウムを２５０Å、０．２ミクロンの厚さで施したボンディングワイヤー、ニッケル１９０Åの厚さで施したボンディングワイヤー、白金２２０Åの厚さで施したボンディングワイヤーを作製した。   As a comparative example, copper was drawn, annealed, pickled, washed with water in the same manner as the above-described invention example, and then a bonding wire in which gold was applied in a thickness of 5 mm and 500 mm by electroplating, and palladium was 250 mm, 0.2 mm A bonding wire applied with a thickness of micron, a bonding wire applied with a thickness of 190 mm nickel, and a bonding wire applied with a thickness of 220 mm platinum were prepared.

各ワイヤーを放電加工してボールを５０個製造し、各種評価を行った。各評価項目の測定方法は以下の通りである。   Each wire was subjected to electric discharge machining to produce 50 balls, and various evaluations were performed. The measurement method for each evaluation item is as follows.

ボール形成性はボールの形状が不良である個数を記録した。ワイヤー軸に左右対称、かつ、ワイヤー軸と垂直な面においてボールが最も大きな断面積をもつ面との交差点をボール中心点とした場合の半径が、ボール最低点までの距離と比較して、１０％以上異なる場合はボール形成性を不良とし、１０％未満であればボール形成性は良好とした。   As the ball formability, the number of balls having a bad shape was recorded. The radius when the intersection of the ball and the plane having the largest cross-sectional area in the plane perpendicular to the wire axis and the plane perpendicular to the wire axis is the ball center point is 10 in comparison with the distance to the lowest point of the ball. If the difference is more than%, the ball formability is poor, and if it is less than 10%, the ball formability is good.

フィレット性はフィレットが不良である個数を記録した。なおフィレットの曲率半径がボール部の半径と比較して０．０１〜１００倍にあればフィレットが良好に形成されているとし、それ以外は不良と判断した。なお、前記曲率半径は図１のように、フィレットのワイヤー側端部とボール側端部から求めた。   For the fillet property, the number of defective fillets was recorded. Note that if the curvature radius of the fillet is 0.01 to 100 times the radius of the ball part, the fillet is considered to be well formed, and otherwise it was determined to be defective. In addition, the said curvature radius was calculated | required from the wire side edge part and ball | bowl side edge part of a fillet like FIG.

耐破断性はＳＥＭＩ Ｇ７３−０９９７に基づくワイヤープル試験を行い、破断強度、ワイヤーの破断箇所の回数を記録した。プル速度は０．５ｍｍ／秒とした。   For the break resistance, a wire pull test based on SEMI G73-0997 was performed, and the breaking strength and the number of breaks of the wire were recorded. The pulling speed was 0.5 mm / second.

なお、ボール形状、フィレット形状は走査型電子顕微鏡で観察した。被覆層の厚さは、ミクロトーム法によりワイヤーの伸線方向と垂直な断面で切断し、透過型電子顕微鏡で観察して厚さを求めた。   The ball shape and fillet shape were observed with a scanning electron microscope. The thickness of the coating layer was determined by slicing along a cross section perpendicular to the wire drawing direction by a microtome method and observing with a transmission electron microscope.

［実施例１］
放電条件、芯材を同一とし、被覆層の厚さと各種特性（ボール形成性、フィレット性、耐破断性）との関係を評価した。芯材は純度９９．９９５％の銅で直径６２μｍ、ボール加工は新川製ボンディング装置ＦＡ−ＣＵＢ１０を用い、条件は４５ｍＡ、１．４ｍｓｅｃとし、ワイヤーの先端部に、０．７Ｌ／分の流量で５％水素、残窒素の混合ガスをボール形成部に吹きかけた。シリコンチップに形成した０．５ミクロン厚のアルミ電極にファーストボンディングをおこない、５ミクロン厚の銀メッキをほどこした銅系リードフレームにセカンドボンディングをおこなった。ワイヤーボンディングにおけるステージ温度は２３０℃とした。結果を表１に示す。 [Example 1]
The discharge conditions and the core material were the same, and the relationship between the thickness of the coating layer and various properties (ball forming property, fillet property, fracture resistance) was evaluated. The core material is copper with a purity of 99.995% and a diameter of 62 μm. Ball processing is performed using a Shinkawa bonding device FA-CUB10, the conditions are 45 mA, 1.4 msec, and the wire tip is flowed at 0.7 L / min. A mixed gas of 5% hydrogen and residual nitrogen was sprayed onto the ball forming part. First bonding was performed on an aluminum electrode having a thickness of 0.5 microns formed on a silicon chip, and second bonding was performed on a copper lead frame having a silver plating having a thickness of 5 microns. The stage temperature in wire bonding was 230 ° C. The results are shown in Table 1.

Figure 0004398816
Figure 0004398816

表１から明らかなように、本発明例はボール形成性、フィレット性、耐破断性に優れていることがわかる。耐破断性は、ボンディング部の強度が十分であった場合、ループの途中で破断するのが最も良好で、本発明では破断強度、破断箇所とも理想的であった。一方比較例ではワイヤーの酸化が十分抑えられていないため、セカンド接合部にて破断する回数が多かった。さらにネック部の強度が弱いため、ループで切断する回数が少なく破断荷重が小さくなった。   As is apparent from Table 1, it can be seen that the inventive examples are excellent in ball forming properties, fillet properties, and fracture resistance. When the strength of the bonding part is sufficient, the fracture resistance is best to break in the middle of the loop, and in the present invention, both the breaking strength and the fracture location are ideal. On the other hand, in the comparative example, since the oxidation of the wire was not sufficiently suppressed, the number of times of fracture at the second joint was large. Furthermore, since the strength of the neck portion was weak, the number of times of cutting with a loop was small and the breaking load was small.

［実施例２］
芯材とメッキ厚を同一とし、放電条件と各種特性（ボール形成性、フィレット性、耐破断性）との関係を評価した。芯材は純度９９．９９５％の銅で直径２５μｍ、メッキは金メッキ厚さ１７０Åとした。ボールは６０−６５ミクロン径になるように放電時間と電流値を調整し、ワイヤー先端部に１００％窒素ガスを１Ｌ／分の流量で流した。結果を表２に示す。 [Example 2]
The core material and the plating thickness were the same, and the relationship between the discharge conditions and various characteristics (ball forming property, fillet property, fracture resistance) was evaluated. Core diameter 25μm purity 99.995% copper, plating was gold thickness 170 Å. The discharge time and the current value were adjusted so that the ball had a diameter of 60 to 65 microns, and 100% nitrogen gas was allowed to flow through the wire tip at a flow rate of 1 L / min. The results are shown in Table 2.

Figure 0004398816
Figure 0004398816

表２から明らかなように、本発明例はボール形成性、フィレット性、耐破断性に優れていることがわかる。しかし、比較例では放電時間が長いためボール不良が発生した。   As is apparent from Table 2, it can be seen that the inventive examples are excellent in ball forming properties, fillet properties, and fracture resistance. However, since the discharge time was long in the comparative example, a ball defect occurred.

［実施例３］
芯材とメッキ厚と放電条件を一定とし、製造工程の順序と酸化特性との関係を評価した。耐酸化性とは、ボンディング作業後のボール表面をオージェ電子分光測定法にて分析し、１０ｋeＶ１０ｎＡの加速電圧の条件で表面元素を確認し、酸素の体積比または銅の体積比が１０％未満であれば良好とした。耐破断性とは、半導体チップ電極と銀メッキリードフレームへのボンディング作業後ワイヤープル試験をおこない、ワイヤー接合強度と、破断した箇所の個数を記録した。芯材は純度９９．９９５％の銅で直径２５μｍ、メッキは金メッキ厚さ０．０１μｍ、ボール加工は新川製ボンディング装・ＦＡ−ＣＵＢ１０を用いた。ボール放電条件は４５ｍＡ、１．４ｍｓｅｃ、５％水素と窒素との混合ガスを０．７Ｌ／分流した。なお、ステージ温度は２００℃とした。結果を表３に示す。 [Example 3]
The core material, plating thickness, and discharge conditions were fixed, and the relationship between the order of the manufacturing process and the oxidation characteristics was evaluated. Oxidation resistance means that the ball surface after bonding work is analyzed by Auger electron spectroscopy, the surface elements are confirmed under the condition of an acceleration voltage of 10 keV10 nA, and the volume ratio of oxygen or the volume ratio of copper is less than 10%. If there was, it was considered good. With respect to breakage resistance, a wire pull test was performed after bonding work to a semiconductor chip electrode and a silver-plated lead frame, and the wire bonding strength and the number of broken portions were recorded. The core material was copper with a purity of 99.995%, the diameter was 25 μm, the plating was a gold plating thickness of 0.01 μm, and ball processing was performed using Shinkawa Bonding Equipment FA-CUB10. The ball discharge conditions were 45 mA, 1.4 msec, and a mixed gas of 5% hydrogen and nitrogen was flowed at 0.7 L / min. The stage temperature was 200 ° C. The results are shown in Table 3.

Figure 0004398816
Figure 0004398816

表３から明らかなように、本発明例は耐酸化性、耐破断性に優れていることがわかる。しかし、比較例ではメッキ後に焼鈍や伸線をしたため表面に銅が拡散して酸化し、セカンド部で破断しやすくなり、また破断荷重も劣った。   As is apparent from Table 3, the examples of the present invention are excellent in oxidation resistance and rupture resistance. However, in the comparative example, since annealing and wire drawing were performed after plating, copper was diffused and oxidized on the surface, and it was easy to break at the second portion, and the breaking load was inferior.

本発明のフィレットを有するワイヤーボンディング用ボールとフィレットの曲率半径を示す図である。It is a figure which shows the curvature radius of the ball | bowl for wire bonding which has a fillet of this invention, and a fillet. 従来例のフィレットを有しないワイヤーボンディング用ボールを示す図である。It is a figure which shows the ball | bowl for wire bonding which does not have a fillet of a prior art example.

符号の説明Explanation of symbols

１ ボンディングワイヤー
２ フィレット
３ ボール
４ フィレット曲率半径
５ ボールネック部
1 Bonding wire 2 Fillet 3 Ball 4 Fillet radius of curvature 5 Ball neck

Claims (2)

ボンディングワイヤー先端部とトーチ電極との間に電圧を印加して、両者間の放電によ
りワイヤー先端部を溶融させてフィレットを有したボールを形成し、前記ボールを半導体
電極に接合して前記ボンディングワイヤーと前記半導体電極とを電気的に接続するために
用いられる半導体装置用ボンディングワイヤーを製造する方法において、
銅及び不可避不純物からなる前記ボンディングワイヤーの芯材を最終焼鈍した後、耐酸
化性の金属からなる被覆層を被覆し、
前記被覆層は、厚さが１０Å以上であり、かつ前記ボンディングワイヤーの断面におけ
る、前記被覆層の面積と前記芯材の面積の関係をＸ＝被覆層面積／（芯材面積＋被覆層面
積）とした場合、Ｘが０．００５以下となるように形成し、
前記ボールの形成時に、前記ワイヤー先端部が溶融して形成される前記芯材と前記被覆
層からなる合金は、前記芯材及び前記被覆層よりも融点が低く、
かつ、前記ボールの形成時に、溶融した前記合金が前記ワイヤー界面に濡れ上がること
により前記フィレットを形成する
ことを特徴とするボンディングワイヤーの製造方法。 By applying a voltage between the bonding wire tip and the torch electrode, by melting the wire tip to form a ball having a fillet by discharge between them, the bonding wires and bonding the ball to the semiconductor electrode to electrically connecting the semiconductor electrode
A method of manufacturing a bonding wire for a semiconductor device used,
After annealing the core of the bonding wire made of copper and inevitable impurities,
Coating a coating layer made of a metal that can be transformed
The covering layer has a thickness of 10 mm or more and is disposed in a cross section of the bonding wire.
X = coating layer area / (core material area + coating layer surface)
Product), X is formed to be 0.005 or less,
The core material and the coating formed by melting the tip of the wire when forming the ball
The alloy composed of layers has a lower melting point than the core material and the coating layer,
And, when the ball is formed, the molten alloy wets the wire interface.
The manufacturing method of the bonding wire characterized by forming the said fillet by . 前記被覆層が金及び不可避不純物からなることを特徴とする、請求項１に記載のボンデThe bonder according to claim 1, wherein the coating layer is made of gold and inevitable impurities.
ィングワイヤーの製造方法。Manufacturing method of wing wire.
JP2004212827A 2004-07-21 2004-07-21 Bonding wire manufacturing method Expired - Fee Related JP4398816B2 (en)

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