JPH0535715B2 - - Google Patents
Info
- Publication number
- JPH0535715B2 JPH0535715B2 JP62149756A JP14975687A JPH0535715B2 JP H0535715 B2 JPH0535715 B2 JP H0535715B2 JP 62149756 A JP62149756 A JP 62149756A JP 14975687 A JP14975687 A JP 14975687A JP H0535715 B2 JPH0535715 B2 JP H0535715B2
- Authority
- JP
- Japan
- Prior art keywords
- single crystal
- crucible
- pulling
- heat
- melt
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000013078 crystal Substances 0.000 claims description 58
- 239000000155 melt Substances 0.000 claims description 22
- 238000004519 manufacturing process Methods 0.000 claims description 9
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 8
- 229910002804 graphite Inorganic materials 0.000 claims description 8
- 239000010439 graphite Substances 0.000 claims description 8
- 238000013459 approach Methods 0.000 claims description 7
- 239000011810 insulating material Substances 0.000 claims description 7
- 230000007423 decrease Effects 0.000 claims description 4
- 239000010453 quartz Substances 0.000 claims description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 4
- 238000002844 melting Methods 0.000 claims description 3
- 230000008018 melting Effects 0.000 claims description 3
- 239000002994 raw material Substances 0.000 claims description 3
- 238000010438 heat treatment Methods 0.000 claims description 2
- 239000007788 liquid Substances 0.000 claims description 2
- 239000008710 crystal-8 Substances 0.000 description 7
- 230000007547 defect Effects 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 238000009413 insulation Methods 0.000 description 5
- 239000007789 gas Substances 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 230000002093 peripheral effect Effects 0.000 description 3
- 230000005855 radiation Effects 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 239000012774 insulation material Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
Landscapes
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14975687A JPS63315589A (ja) | 1987-06-16 | 1987-06-16 | 単結晶製造装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14975687A JPS63315589A (ja) | 1987-06-16 | 1987-06-16 | 単結晶製造装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63315589A JPS63315589A (ja) | 1988-12-23 |
| JPH0535715B2 true JPH0535715B2 (de) | 1993-05-27 |
Family
ID=15482062
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14975687A Granted JPS63315589A (ja) | 1987-06-16 | 1987-06-16 | 単結晶製造装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63315589A (de) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1997021853A1 (fr) * | 1995-12-08 | 1997-06-19 | Shin-Etsu Handotai Co., Ltd. | Appareil de production de monocristaux et processus s'y rapportant |
| WO2004027124A1 (ja) * | 2002-09-18 | 2004-04-01 | Sumitomo Mitsubishi Silicon Corporation | シリコン単結晶引上げ装置の熱遮蔽部材 |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2709310B2 (ja) * | 1989-11-11 | 1998-02-04 | 住友シチックス株式会社 | 単結晶引上げ装置 |
| JP2549445B2 (ja) * | 1989-12-05 | 1996-10-30 | 新日本製鐵株式会社 | シリコン単結晶の製造方法 |
| JP3016897B2 (ja) * | 1991-03-20 | 2000-03-06 | 信越半導体株式会社 | シリコン単結晶の製造方法及び装置 |
| JP2562245B2 (ja) * | 1991-06-24 | 1996-12-11 | コマツ電子金属株式会社 | 単結晶の引上装置 |
| JP2606046B2 (ja) * | 1992-04-16 | 1997-04-30 | 住友金属工業株式会社 | 単結晶引き上げ時における単結晶酸素濃度の制御方法 |
| US6485807B1 (en) | 1997-02-13 | 2002-11-26 | Samsung Electronics Co., Ltd. | Silicon wafers having controlled distribution of defects, and methods of preparing the same |
| US6503594B2 (en) | 1997-02-13 | 2003-01-07 | Samsung Electronics Co., Ltd. | Silicon wafers having controlled distribution of defects and slip |
| SG64470A1 (en) | 1997-02-13 | 1999-04-27 | Samsung Electronics Co Ltd | Methods of manufacturing monocrystalline silicon ingots and wafers by controlling pull rate profiles in a hot zone furnace and ingots and wafers manufactured thereby |
| US6340392B1 (en) | 1997-10-24 | 2002-01-22 | Samsung Electronics Co., Ltd. | Pulling methods for manufacturing monocrystalline silicone ingots by controlling temperature at the center and edge of an ingot-melt interface |
| MY131022A (en) * | 2000-09-29 | 2007-07-31 | Samsung Electronics Co Ltd | Silicon wafers having controlled distribution of defects, and methods of preparing the same |
| JP4736401B2 (ja) * | 2004-11-02 | 2011-07-27 | 住友金属工業株式会社 | 炭化珪素単結晶の製造方法 |
| CN101838846A (zh) * | 2010-02-23 | 2010-09-22 | 上海汉虹精密机械有限公司 | 单晶炉装置 |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62138386A (ja) * | 1985-12-11 | 1987-06-22 | Shin Etsu Handotai Co Ltd | 単結晶の引上装置 |
-
1987
- 1987-06-16 JP JP14975687A patent/JPS63315589A/ja active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62138386A (ja) * | 1985-12-11 | 1987-06-22 | Shin Etsu Handotai Co Ltd | 単結晶の引上装置 |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1997021853A1 (fr) * | 1995-12-08 | 1997-06-19 | Shin-Etsu Handotai Co., Ltd. | Appareil de production de monocristaux et processus s'y rapportant |
| WO2004027124A1 (ja) * | 2002-09-18 | 2004-04-01 | Sumitomo Mitsubishi Silicon Corporation | シリコン単結晶引上げ装置の熱遮蔽部材 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS63315589A (ja) | 1988-12-23 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| S533 | Written request for registration of change of name |
Free format text: JAPANESE INTERMEDIATE CODE: R313533 |
|
| R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
| LAPS | Cancellation because of no payment of annual fees |