JPH05343590A - Lead frame for semiconductor device - Google Patents
Lead frame for semiconductor deviceInfo
- Publication number
- JPH05343590A JPH05343590A JP15020992A JP15020992A JPH05343590A JP H05343590 A JPH05343590 A JP H05343590A JP 15020992 A JP15020992 A JP 15020992A JP 15020992 A JP15020992 A JP 15020992A JP H05343590 A JPH05343590 A JP H05343590A
- Authority
- JP
- Japan
- Prior art keywords
- lead
- semiconductor device
- plating
- frame
- sheath
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
- H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
- H05K3/34—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
- H05K3/341—Surface mounted components
- H05K3/3421—Leaded components
Landscapes
- Lead Frames For Integrated Circuits (AREA)
Abstract
Description
【0001】[0001]
【産業上の利用分野】本発明は半導体装置用リードフレ
ームに関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device lead frame.
【0002】[0002]
【従来の技術】従来の半導体装置用リードフレームは、
図4に示すように、複数のリード3と、1個又は複数個
の半導体素子搭載部1と、リード3の外側のフレーム枠
4及びフレーム枠4に設けられたパイロット穴7を有
し、リード3の形状はそれぞれ平坦かつ平行な構造とな
っていた。2. Description of the Related Art Conventional lead frames for semiconductor devices are
As shown in FIG. 4, a plurality of leads 3, one or a plurality of semiconductor element mounting portions 1, a frame frame 4 outside the leads 3 and a pilot hole 7 provided in the frame frame 4 are provided. The shape of 3 was flat and parallel.
【0003】また、図5に示すように、フレーム枠4と
リード3の間に隙間9を有する構造となっているものも
あった。Further, as shown in FIG. 5, there has been a structure having a gap 9 between the frame 4 and the lead 3.
【0004】[0004]
【発明が解決しようとする課題】近年、半導体装置のリ
ードの外装めっき処理は、電解めっきが主流であり半導
体装置のリードとフレーム枠とは電気的導通が必要であ
る為外装めっき処理後にリードを指定の長さに切断を行
う工程となっている。また、実際に半導体装置を回路基
板へ実装する形態は、表面実装タイプが主流となってい
る。更に、軽薄短小化の流れ,リード間ピッチの微細化
ならびに短リード化により、半導体装置のリードと回路
基板の接続部分は極めて小さく、0.2×0.4mm程
度の領域しかなくなっており、半導体装置のリードと回
路基板の接続が困難となっている。In recent years, electrolytic plating has been the mainstream of the exterior plating treatment for the leads of semiconductor devices, and it is necessary to electrically connect the leads of the semiconductor device and the frame to the leads after the exterior plating treatment. It is a process of cutting to a specified length. In addition, the surface mounting type is the mainstream for actually mounting a semiconductor device on a circuit board. Furthermore, due to the trend of lighter, thinner, shorter, finer pitch between leads and shorter leads, the connecting portion between the lead of the semiconductor device and the circuit board is extremely small, and only the area of about 0.2 × 0.4 mm is left. It is difficult to connect the device leads to the circuit board.
【0005】しかし、上述した従来の半導体装置用リー
ドフレームは、リードが平坦かつ平行である為リードを
指定の長さに切断した場合に、リードの先端の切断面は
外装めっき処理が施されず、リードが露出した状態にな
っていた。したがって、回路基板上に半導体装置を実装
し半田付接続を行った場合にリードの先端部分には半田
が付かず、接続領域が小さく確実に電気的導通が得られ
ない不良が発生するという問題点があった。However, in the above-mentioned conventional lead frame for a semiconductor device, since the leads are flat and parallel, when the leads are cut to a specified length, the cut surface of the tips of the leads is not subjected to exterior plating treatment. , The lead was exposed. Therefore, when a semiconductor device is mounted on a circuit board and solder connection is performed, solder does not attach to the tip portions of the leads, resulting in a defect that the connection area is small and electrical conduction cannot be reliably obtained. was there.
【0006】また、半導体装置のリードと回路基板の接
続状態を検査する方法としてリードの側面における半田
のはい上がり状態によって判定されているが、リードピ
ッチの微細化により検査が不可能な為、リードの先端部
における半田のはい上がり状態で判定するようになって
きた。しかし、従来の半導体装置用リードフレームでは
半導体装置のリード先端部の切断面に外装めっきが施さ
れていない為確実に半田のはい上がりが発生せず誤検査
するという問題点があった。Further, as a method of inspecting the connection state between the leads of the semiconductor device and the circuit board, it is judged by the solder rising state on the side surface of the leads, but the inspection is impossible due to the miniaturization of the lead pitch. It has come to be judged by the rising state of the solder at the tip of the. However, the conventional lead frame for a semiconductor device has a problem in that the cut surface of the lead tip portion of the semiconductor device is not externally plated, so that the solder does not rise and is erroneously inspected.
【0007】また、図5に示すように、従来の半導体装
置用リードフレームにおいては、リードとフレーム枠と
の間に隙間を設けている為、リード先端に外装めっきを
施すことが可能であるが、リードの先端がフレーム枠に
支持されていない為リード間ピッチの微細な今日の半導
体装置においては、リードの強度が低くリード曲り不良
を発生させるという問題点があった。Further, as shown in FIG. 5, in the conventional lead frame for a semiconductor device, since a gap is provided between the lead and the frame, it is possible to apply exterior plating to the lead tip. However, since the tips of the leads are not supported by the frame frame, there is a problem in that the strength of the leads is low and lead bending defects occur in the present semiconductor devices with a fine lead pitch.
【0008】本発明の目的は、回路基板上に半導体装置
を半田接続した場合に、確実に電気的導通が得られ、接
続状態の検査が確実でリード曲り不良の発生のない半導
体装置用リードフレームを提供することにある。An object of the present invention is to provide a lead frame for a semiconductor device, in which electrical continuity is surely obtained when the semiconductor device is soldered and connected to a circuit board, a connection state is surely checked, and a lead bending defect does not occur. To provide.
【0009】[0009]
【課題を解決するための手段】本発明の半導体装置用リ
ードフレームは、 (1)半導体装置の外部リードの先端となる位置に外装
めっき層を形成する為の少くとも1個の貫通する外装め
っき穴を有する。According to the present invention, there is provided a lead frame for a semiconductor device, which comprises (1) at least one penetrating exterior plating for forming an exterior plating layer at a position which becomes a tip of an external lead of the semiconductor device. Has a hole.
【0010】(2)半導体装置の外部リードの先端とな
る位置に外装めっき層を形成する為の切欠きを有する。(2) The semiconductor device has a notch for forming an exterior plating layer at a position which becomes a tip of an external lead.
【0011】[0011]
【実施例】次に、本発明の実施例について図面を参照し
て説明する。Embodiments of the present invention will now be described with reference to the drawings.
【0012】図1(a),(b)は本発明の第1の実施
例の平面図及びそのリード部の部分拡大平面図である。FIGS. 1A and 1B are a plan view of a first embodiment of the present invention and a partially enlarged plan view of a lead portion thereof.
【0013】第1の実施例は、図1(a),(b)に示
すように、半導体素子搭載部1の周囲に複数のリード3
を設け、このリード3の外側のフレーム枠4にパイロッ
ト穴7を設けた半導体装置用リードフレームにおいて、
リード3の中央部の半導体装置のリード先端となる位置
に外装めっきを施す為の外装めっき穴2を設ける。In the first embodiment, as shown in FIGS. 1A and 1B, a plurality of leads 3 are provided around the semiconductor element mounting portion 1.
And a pilot hole 7 is provided in the frame frame 4 outside the lead 3 in the lead frame for a semiconductor device,
An outer plating hole 2 for performing outer plating is provided at a position at the center of the lead 3 which is the tip of the lead of the semiconductor device.
【0014】図2は図1(a),(b)の外装めっき穴
に外装めっきを施し先端部を切断したリードの斜視図で
ある。FIG. 2 is a perspective view of the lead shown in FIGS. 1 (a) and 1 (b), which is obtained by applying exterior plating to the exterior plating hole and cutting the tip.
【0015】図1(a),(b)に示す半導体装置用リ
ードフレームを用いて、樹脂封止後に外層めっきを施し
外層めっき層8を形成する。Using the lead frame for a semiconductor device shown in FIGS. 1A and 1B, outer layer plating is applied after resin sealing to form an outer layer plating layer 8.
【0016】図2に示すように、外装めっき層8は、リ
ード3の表面,裏面,側面及び外装めっき穴2の円周面
にも施される。As shown in FIG. 2, the outer plating layer 8 is also applied to the front surface, the back surface, the side surface of the lead 3 and the circumferential surface of the outer plating hole 2.
【0017】外装めっき穴2の大きさは、リード3の側
面との肉厚が0.02mm程度までの最大径とするのが
最良である。また、外装めっき穴2の形状は正方形及び
長方形でも同様の効果が得られる。The size of the outer plating hole 2 is best set to the maximum diameter up to about 0.02 mm in thickness with the side surface of the lead 3. Also, the same effect can be obtained when the shape of the exterior plating hole 2 is square or rectangular.
【0018】図3(a),(b)は本発明の第2の実施
例の平面図及びそのリード部の部分拡大平面図である。FIGS. 3 (a) and 3 (b) are a plan view of a second embodiment of the present invention and a partially enlarged plan view of its lead portion.
【0019】第2の実施例は、図3(a),(b)に示
すように、図1(a),(b)に示す第1の実施例のリ
ード3の中央部の外装めっき穴2の代りに切欠き6を設
けたものである。In the second embodiment, as shown in FIGS. 3 (a) and 3 (b), the outer plating hole in the central portion of the lead 3 of the first embodiment shown in FIGS. 1 (a) and 1 (b). A notch 6 is provided instead of 2.
【0020】この第2の実施例においても第1の実施例
と同様の効果が得られる。Also in the second embodiment, the same effect as in the first embodiment can be obtained.
【0021】[0021]
【発明の効果】以上説明したように本発明は、半導体装
置用リードフレームにおいて、半導体装置のリードの先
端となる位置の中央部に外装めっきを施す為の貫通する
外装めっき穴を設けることにより、リードの先端部にも
外装めっきが施されるようになるため、従来の半導体装
置用リードフレームにおける半導体装置のリードと回路
基板との半田付領域に対し約20%程度の半田付領域が
拡大する。したがって、半導体装置の回路基板への接続
が確実となる効果がある。As described above, according to the present invention, in the lead frame for a semiconductor device, by providing a penetrating outer plating hole for performing outer plating in the central portion of the position of the tip of the lead of the semiconductor device, Since the outer ends of the leads are also subjected to exterior plating, the soldering area of about 20% of the soldering area between the leads of the semiconductor device and the circuit board in the conventional lead frame for a semiconductor device is expanded. . Therefore, there is an effect that the connection of the semiconductor device to the circuit board becomes reliable.
【0022】また、半導体装置のリードと回路基板の接
続状態の検査においても、リード先端部に外装めっきが
施される為、リード先端部にも半田が付くことになり、
検査を容易に行なえる効果がある。Also, in the inspection of the connection state between the leads of the semiconductor device and the circuit board, the lead tips are externally plated, so that the lead tips are also soldered.
The effect is that inspection can be performed easily.
【図1】本発明の第1の実施例の平面図及びそのリード
部の部拡大平面図である。FIG. 1 is a plan view of a first embodiment of the present invention and an enlarged plan view of a lead portion thereof.
【図2】図1の外装めっき穴に外装めっきを施し先端部
を切断したリードの斜視図である。FIG. 2 is a perspective view of a lead obtained by applying exterior plating to the exterior plating hole of FIG. 1 and cutting the tip portion.
【図3】本発明の第2の実施例の平面図及びそのリード
部の部分拡大平面図である。FIG. 3 is a plan view of a second embodiment of the present invention and a partially enlarged plan view of a lead portion thereof.
【図4】従来の半導体装置用リードフレームの一例の平
面図である。FIG. 4 is a plan view of an example of a conventional semiconductor device lead frame.
【図5】従来の半導体装置用リードフレームの他の例の
平面図である。FIG. 5 is a plan view of another example of a conventional lead frame for a semiconductor device.
1 半導体装置搭載部 2 外装めっき穴 3 リード 4 フレーム枠 5 タイバー 6 切欠き 7 パイロット穴 8 外装めっき層 9 隙間 1 Semiconductor device mounting part 2 Exterior plating hole 3 Lead 4 Frame frame 5 Tie bar 6 Notch 7 Pilot hole 8 Exterior plating layer 9 Gap
Claims (2)
置に外装めっき層を形成する為の少くとも1個の貫通す
る外装めっき穴を有することを特徴とする半導体装置用
リードフレーム。1. A lead frame for a semiconductor device, which has at least one penetrating outer plating hole for forming an outer plating layer at a position which becomes a tip of an external lead of the semiconductor device.
置に外装めっき層を形成する為の切欠きを有することを
特徴とする半導体装置用リードフレーム。2. A lead frame for a semiconductor device, which has a notch for forming an exterior plating layer at a position which becomes a tip of an external lead of the semiconductor device.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15020992A JPH05343590A (en) | 1992-06-10 | 1992-06-10 | Lead frame for semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15020992A JPH05343590A (en) | 1992-06-10 | 1992-06-10 | Lead frame for semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH05343590A true JPH05343590A (en) | 1993-12-24 |
Family
ID=15491920
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP15020992A Withdrawn JPH05343590A (en) | 1992-06-10 | 1992-06-10 | Lead frame for semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH05343590A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5955778A (en) * | 1996-10-08 | 1999-09-21 | Nec Corporation | Lead frame with notched lead ends |
CN104517927A (en) * | 2013-10-01 | 2015-04-15 | 精工电子有限公司 | Semiconductor device and method of manufacturing the same |
JP2019087741A (en) * | 2017-11-06 | 2019-06-06 | ローム株式会社 | Semiconductor device and method of manufacturing the same |
-
1992
- 1992-06-10 JP JP15020992A patent/JPH05343590A/en not_active Withdrawn
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5955778A (en) * | 1996-10-08 | 1999-09-21 | Nec Corporation | Lead frame with notched lead ends |
CN104517927A (en) * | 2013-10-01 | 2015-04-15 | 精工电子有限公司 | Semiconductor device and method of manufacturing the same |
JP2015072947A (en) * | 2013-10-01 | 2015-04-16 | セイコーインスツル株式会社 | Semiconductor device and manufacturing method of the same |
JP2019087741A (en) * | 2017-11-06 | 2019-06-06 | ローム株式会社 | Semiconductor device and method of manufacturing the same |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
A300 | Withdrawal of application because of no request for examination |
Free format text: JAPANESE INTERMEDIATE CODE: A300 Effective date: 19990831 |