JPH0532902B2 - - Google Patents

Info

Publication number
JPH0532902B2
JPH0532902B2 JP63157701A JP15770188A JPH0532902B2 JP H0532902 B2 JPH0532902 B2 JP H0532902B2 JP 63157701 A JP63157701 A JP 63157701A JP 15770188 A JP15770188 A JP 15770188A JP H0532902 B2 JPH0532902 B2 JP H0532902B2
Authority
JP
Japan
Prior art keywords
wafer
heating section
heating
vapor phase
phase growth
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP63157701A
Other languages
English (en)
Japanese (ja)
Other versions
JPH027419A (ja
Inventor
Kichizo Komyama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shibaura Machine Co Ltd
Original Assignee
Toshiba Machine Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Machine Co Ltd filed Critical Toshiba Machine Co Ltd
Priority to JP15770188A priority Critical patent/JPH027419A/ja
Publication of JPH027419A publication Critical patent/JPH027419A/ja
Publication of JPH0532902B2 publication Critical patent/JPH0532902B2/ja
Granted legal-status Critical Current

Links

JP15770188A 1988-06-24 1988-06-24 気相成長装置 Granted JPH027419A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15770188A JPH027419A (ja) 1988-06-24 1988-06-24 気相成長装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15770188A JPH027419A (ja) 1988-06-24 1988-06-24 気相成長装置

Publications (2)

Publication Number Publication Date
JPH027419A JPH027419A (ja) 1990-01-11
JPH0532902B2 true JPH0532902B2 (OSRAM) 1993-05-18

Family

ID=15655489

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15770188A Granted JPH027419A (ja) 1988-06-24 1988-06-24 気相成長装置

Country Status (1)

Country Link
JP (1) JPH027419A (OSRAM)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7279502B2 (en) 1999-04-30 2007-10-09 Cellgate, Inc. Polyamine analog conjugates and quinone conjugates as therapies for cancers and prostate diseases

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3474602B2 (ja) * 1993-05-07 2003-12-08 住友電気工業株式会社 超電導導体
JP3501828B2 (ja) * 1993-10-21 2004-03-02 住友電気工業株式会社 酸化物超電導導体の製造方法
JPH1027759A (ja) * 1996-07-11 1998-01-27 Seiko Epson Corp 熱処理装置、減圧ｃｖｄ装置、および薄膜装置の製造方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5130477A (ja) * 1974-09-09 1976-03-15 Kokusai Electric Co Ltd Kisoseichosochi
JPS6054919B2 (ja) * 1976-08-06 1985-12-02 株式会社日立製作所 低圧反応装置
JPS5842225A (ja) * 1981-09-04 1983-03-11 Kokusai Electric Co Ltd 外熱形の横型半導体気相成長装置
JPS5950093A (ja) * 1982-09-10 1984-03-22 Toshiba Mach Co Ltd 拡散炉型減圧気相成長装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7279502B2 (en) 1999-04-30 2007-10-09 Cellgate, Inc. Polyamine analog conjugates and quinone conjugates as therapies for cancers and prostate diseases

Also Published As

Publication number Publication date
JPH027419A (ja) 1990-01-11

Similar Documents

Publication Publication Date Title
TWI524371B (zh) 具有擴散板和注入器組件的批次處理腔
US6301434B1 (en) Apparatus and method for CVD and thermal processing of semiconductor substrates
US7718930B2 (en) Loading table and heat treating apparatus having the loading table
JP4961092B2 (ja) 特に１つ以上の結晶質の基板上に、特に結晶質の層を沈積する装置
US7429717B2 (en) Multizone heater for furnace
US20050000430A1 (en) Showerhead assembly and apparatus for manufacturing semiconductor device having the same
US20020092471A1 (en) Semiconductor deposition apparatus and shower head
TWI875850B (zh) 用於改進基板上的邊緣薄膜厚度均勻性的處理套件
TW201432103A (zh) 石英的上部及下部圓頂
JP2001522138A5 (OSRAM)
TW201602403A (zh) 在ｅｐｉ腔室中的基材熱控制
JP2004356624A (ja) 載置台構造及び熱処理装置
JPH0532902B2 (OSRAM)
JPS594434A (ja) 気相反応装置
JPH0930893A (ja) 気相成長装置
JPH11111707A (ja) 気相成長装置
JPS622614A (ja) 赤外線加熱装置
JPH0395924A (ja) 気相成長装置
JPH0611031B2 (ja) 気相反応容器
JPH0461117A (ja) 枚葉式ｃｖｄ装置
JPS60253212A (ja) 気相成長装置
JPH0922902A (ja) フランジ装置及びこれを用いた横型プロセスチューブ装置
JPS5950093A (ja) 拡散炉型減圧気相成長装置
JPH0518250B2 (OSRAM)
JPH11135433A (ja) 真空処理装置