JPH05326602A - Solder bonding method - Google Patents

Solder bonding method

Info

Publication number
JPH05326602A
JPH05326602A JP4130746A JP13074692A JPH05326602A JP H05326602 A JPH05326602 A JP H05326602A JP 4130746 A JP4130746 A JP 4130746A JP 13074692 A JP13074692 A JP 13074692A JP H05326602 A JPH05326602 A JP H05326602A
Authority
JP
Japan
Prior art keywords
solder
wire
solder wire
ball
capillary tool
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP4130746A
Other languages
Japanese (ja)
Other versions
JP3016956B2 (en
Inventor
Shinichi Fujino
紳一 藤野
Hiroyuki Takahashi
浩之 高橋
Kazuhiro Sakamoto
和弘 阪元
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Rohm Co Ltd
Original Assignee
Rohm Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rohm Co Ltd filed Critical Rohm Co Ltd
Priority to JP4130746A priority Critical patent/JP3016956B2/en
Priority to US08/063,667 priority patent/US5295619A/en
Priority to DE4317131A priority patent/DE4317131C2/en
Publication of JPH05326602A publication Critical patent/JPH05326602A/en
Priority to US08/169,625 priority patent/US5395037A/en
Application granted granted Critical
Publication of JP3016956B2 publication Critical patent/JP3016956B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/93—Batch processes
    • H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/4501—Shape
    • H01L2224/45012—Cross-sectional shape
    • H01L2224/45015—Cross-sectional shape being circular
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
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    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48464—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area also being a ball bond, i.e. ball-to-ball
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
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    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H01L2224/7825—Means for applying energy, e.g. heating means
    • H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/78301—Capillary
    • H—ELECTRICITY
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    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H—ELECTRICITY
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    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/852—Applying energy for connecting
    • H01L2224/85201—Compression bonding
    • H01L2224/85203—Thermocompression bonding
    • H—ELECTRICITY
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    • H01L2224/93—Batch processes
    • H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L2224/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01004—Beryllium [Be]
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    • H01L2924/01—Chemical elements
    • H01L2924/01006—Carbon [C]
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01025—Manganese [Mn]
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    • H01L2924/01033—Arsenic [As]
    • H—ELECTRICITY
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    • H01L2924/01047—Silver [Ag]
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    • H01L2924/01—Chemical elements
    • H01L2924/0105—Tin [Sn]
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    • H01L2924/013—Alloys
    • H01L2924/014—Solder alloys
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    • H01L2924/1901—Structure
    • H01L2924/1904—Component type
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    • H—ELECTRICITY
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    • H01L2924/20—Parameters
    • H01L2924/207—Diameter ranges
    • H01L2924/20755—Diameter ranges larger or equal to 50 microns less than 60 microns

Abstract

PURPOSE:To provide a solder bonding method in which a solder ball, having no oxide on the surface thereof, can be formed at a cut end of solder wire. CONSTITUTION:Works, e.g. a lead frame 5, 8 capacitor element 1, are passed through a tunnel space 10 defined by a heater block 7 and an upper cover body 9 having an opening 11 communicated with the interior of tunnel section 4. A capillary tool 12, through which 6 solder wire 2 penetrates, is disposed at the opening 11 so that the capillary tool 12 can move up and down. Reducing gas is introduced into the tunnel space while oxyhydrogen flame is blown from a torch 13 into the tunnel space to fuse the solder wire 2 in the way thus forming solder balls 2a, 2b at the opposite cut ends. The balls are then bonded to the work thus performing wire bonding.

Description

【発明の詳細な説明】Detailed Description of the Invention

【０００１】[0001]

【産業上の利用分野】本発明は、電子部品の製造に際し
て、例えば、リードフレーム又は基板等のワークにおけ
る半導体チップ等とリード端子等の間を、金属線を使用
してワイヤボンディングする場合に、前記金属線として
半田ワイヤを使用したワイヤボンディング方法に関する
ものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of wire-bonding a semiconductor chip or a lead terminal or the like in a work such as a lead frame or a substrate to a lead terminal by using a metal wire when manufacturing an electronic component. The present invention relates to a wire bonding method using a solder wire as the metal wire.

【０００２】[0002]

【従来の技術】従来、この種のワイヤボンディングに
は、金線を使用するのが極く一般的であったが、金線が
非常に高価で、コストが大幅に嵩むことになるし、ま
た、金線ではこれを温度ヒューズにすることができない
から、これらのために、最近では、前記金線に代えて半
田ワイヤを使用することが行われている。2. Description of the Related Art Heretofore, it has been very common to use a gold wire for this type of wire bonding. However, the gold wire is very expensive and the cost is significantly increased. Since gold wires cannot be used as thermal fuses, solder wires have recently been used instead of the gold wires for these reasons.

【０００３】その大きな特徴としては、半田ワイヤう使
用すると、その組成により、半田ワイヤの融点を変える
ことができるため、任意の温度で溶断する温度ヒューズ
の機能う持たせることができるというものである。とこ
ろで、ワイヤボンディングに金線を使用する場合には、
キャピラリツールに挿通した金線の先端を通常の空気中
で加熱・溶融することで当該先端にボール部を形成した
場合、そのボール部の表面に酸化膜が出来難い。従っ
て、このボール部を半導体チップ等に対して押圧するこ
とによって接合したとき、前記ボール部表面に酸化膜が
ないため、その接合強度が低下しないので、ボール式の
ワイヤボンディング方式を適用することができた。A major feature thereof is that when a solder wire is used, the melting point of the solder wire can be changed depending on its composition, so that it can have a function of a thermal fuse that blows at an arbitrary temperature. .. By the way, when using gold wire for wire bonding,
When a ball portion is formed at the tip by heating and melting the tip of the gold wire inserted through the capillary tool in normal air, it is difficult to form an oxide film on the surface of the ball portion. Therefore, when the ball portion is joined by pressing it against a semiconductor chip or the like, since there is no oxide film on the surface of the ball portion, the joining strength does not decrease. Therefore, the ball type wire bonding method can be applied. did it.

【０００４】しかし、半田ワイヤを使用した場合、その
先端を空気中で加熱すると、著しい酸化反応を起こし、
瞬時に炭化してしまうため、ボールの形成は不可能であ
り、実質上、ボール式ワイヤボンディングを行うことが
できなかった。なお、先行技術の特開平３−２０３３３
１号公報では、半田バンプを形成する工程において、予
め切断された半田ワイヤの先端部を、還元雰囲気中で放
電アークにて加熱することにより、該先端部にボール部
を形成し、この溶融状の半田ボールを配線部に付着し、
次いで半田ワイヤをキャピラリツールと共に引き上げる
ときに半田ボールの根元で半田ワイヤが切断されて半田
バンプを形成することを提案している。However, when a solder wire is used and its tip is heated in air, a remarkable oxidation reaction occurs,
Since it was carbonized in an instant, it was impossible to form balls, and in practice ball type wire bonding could not be performed. It should be noted that the prior art, Japanese Patent Laid-Open No. 3-20333
In the method of forming a solder bump, the tip portion of a previously cut solder wire is heated by a discharge arc in a reducing atmosphere to form a ball portion at the tip portion in the step of forming a solder bump. Attach the solder balls of to the wiring part,
Then, it is proposed that when the solder wire is pulled up together with the capillary tool, the solder wire is cut at the base of the solder ball to form a solder bump.

【０００５】しかし、この方法は、半田ワイヤによるワ
イヤボンディング作業に直接適用できない。もし、半田
ワイヤによるワイヤボンディング作業に適用しようとす
ると、アーク放電に先立って予め半田ワイヤを機械的に
切断する工程を別途必要とし、そのため、装置も複雑に
なると共に作業工程が複雑化し、ワイヤボンディング作
業速度が低下する。また、アーク放電のための針電極
は、その放電回数の累積により損傷を受け易く、耐久性
に乏しいという問題があった。However, this method cannot be directly applied to wire bonding work using solder wires. If it is attempted to apply to wire bonding work with a solder wire, a separate step of mechanically cutting the solder wire in advance is required prior to arc discharge, which complicates the device and the work process, resulting in wire bonding. Work speed decreases. Further, the needle electrode for arc discharge has a problem in that it is easily damaged due to the accumulation of the number of discharges and has poor durability.

【０００６】そこで、従来、半田ワイヤを使用してのワ
イヤボンディングに際しては、前記半田ワイヤの先端
を、半導体チップ等に対して、高温半田を使用して半田
接合するか、或いは、キャピラリツールの挿通した半田
ワイヤの先端を、前記キャピラリツールの下端面から突
出し、この突出端を、前記キャピラリツールによって半
導体チップ等に対して押圧することで、直接的に接合す
るようにしている。Therefore, conventionally, in wire bonding using a solder wire, the tip of the solder wire is soldered to a semiconductor chip or the like by using high temperature solder, or a capillary tool is inserted. The tip of the solder wire is projected from the lower end surface of the capillary tool, and the projecting end is pressed against the semiconductor chip or the like by the capillary tool to directly bond the solder wire.

【０００７】[0007]

【発明が解決しようとする課題】しかし、前者のよう
に、半田ワイヤの先端部を高温半田にて半田接合する方
法は、半田ワイヤとは別に、高温半田を必要とするの
で、材料費が嵩むばかりか、ワイヤボンディングの速度
が遅くて、ワイヤボンディングのコストが可成りアップ
する。However, the former method of soldering the tip of the solder wire with high-temperature solder requires high-temperature solder in addition to the solder wire, resulting in a high material cost. Not only that, the wire bonding speed is slow, and the wire bonding cost is considerably increased.

【０００８】さらに、高温半田による接合時、組成が
鉛、錫を主体とする低融点の半田ワイヤ自体が溶解し
て、接合部の半田ワイヤの直径が小さくなり過ぎること
を避けるため、半田ワイヤの直径を太くしなければなら
ず、そうすると、低融点で電気抵抗値が低い半田ワイヤ
にあっては、熱及び過大電流による溶断特性が悪くなる
という問題もあった。Further, when joining by high temperature solder, in order to avoid that the solder wire itself having a composition of lead and tin and having a low melting point is melted and the diameter of the solder wire at the joining portion becomes too small, The diameter must be increased, which causes a problem that the fusing characteristics due to heat and excessive current deteriorate in a solder wire having a low melting point and a low electric resistance value.

【０００９】また、後者のように、半田ワイヤにおける
キャピラリツールからの突出端を押圧することによって
直接的に接合する方法は、接合面積が、当該突出端に金
線のようにボール部を形成し、このボール部を押圧する
場合よりも小さくて、接合強度が低いから、接合ミスが
多発する、また、電気抵抗値のバラツキが大きくなると
言う問題があった。In the latter method, in which the solder wire is directly bonded by pressing the protruding end of the capillary tool, the bonding area is such that a ball portion is formed on the protruding end like a gold wire. Since the ball portion is smaller than the case where the ball portion is pressed and the joint strength is low, there are problems that frequent joint mistakes occur and that variations in electric resistance value increase.

【００１０】本発明は、半田ワイヤによるワイヤボンデ
ィングが、前記金線の場合と同様に、ボール式のワイヤ
ボンディング方式にて、前記のような問題を招来するこ
となく、確実に行うことができるようにしたワイヤボン
ディング方法を提供することを技術的課題とするもので
ある。According to the present invention, as in the case of the gold wire, the wire bonding with the solder wire can be surely performed by the ball type wire bonding method without causing the above problems. It is a technical object to provide the wire bonding method described above.

【００１１】[0011]

【課題を解決するための手段】この技術的課題を達成す
るため本発明の半田ワイヤによるワイヤボンディング方
法は、リードフレーム等のワークの近傍を還元性雰囲気
に形成し、該還元性雰囲気中にて、キャピラリツールに
挿通した半田ワイヤを、酸素ガスと水素ガスとの混合ガ
スからなる酸水素炎にて切断すると共にその切断の両端
部にボール部をそれぞれ形成し、該各ボール部を前記ワ
ークに接合することを特徴とする。In order to achieve this technical object, a wire bonding method using a solder wire of the present invention is to form a reducing atmosphere in the vicinity of a work such as a lead frame, and then in the reducing atmosphere. , The solder wire inserted through the capillary tool is cut with an oxyhydrogen flame consisting of a mixed gas of oxygen gas and hydrogen gas, and ball portions are formed at both ends of the cutting, and each ball portion is formed on the work. Characterized by joining.

【００１２】[0012]

【発明の効果】このように構成すると、リードフレーム
等のワーク上方に配設したキャピラリツールの周辺は、
還元性ガスの雰囲気になるから、このキャピラリツール
の下端面から突出する半田ワイヤを、還元性雰囲気中に
て、酸素ガスと水素ガスとの混合ガスからなる酸水素炎
にて、加熱・溶融することにより、半田ワイヤの途中が
溶断されると同時にその溶断により切断された端部の溶
融半田は、その表面に酸化皮膜が形成されることなく、
表張力によって球形になるから、前記半田ワイヤの切断
の両端部に同時に、半田のボール部を確実に形成するこ
とができる。According to this structure, the periphery of the capillary tool disposed above the work such as the lead frame is
Because of the reducing gas atmosphere, the solder wire protruding from the lower end surface of the capillary tool is heated and melted in an reducing hydrogen atmosphere with an oxyhydrogen flame composed of a mixed gas of oxygen gas and hydrogen gas. As a result, the middle portion of the solder wire is melted at the same time, and at the same time, the molten solder at the end cut by the melting is not formed with an oxide film on its surface,
Since it becomes spherical due to the surface tension, it is possible to surely form the solder ball portion at both ends of the cutting of the solder wire at the same time.

【００１３】そして、前記キャピラリツールをワークに
向かって移動させて、前記のボール部を、ワークにおけ
る半導体チップ等に対して押圧することにより、前記半
田ワイヤを半導体チップ等に対して、確実に接合するこ
とができるのである。この場合、ボール部を形成してそ
のボール部をボールボンディングまたは圧接すること
で、半田ワイヤとワークとの接合面積を大きくして接合
強度を向上させることができるという効果を奏するので
ある。Then, by moving the capillary tool toward the work and pressing the ball portion against the semiconductor chip or the like in the work, the solder wire is reliably bonded to the semiconductor chip or the like. You can do it. In this case, the ball portion is formed and the ball portion is ball-bonded or pressure-contacted with each other, so that the bonding area between the solder wire and the work can be increased and the bonding strength can be improved.

【００１４】従って，本発明によると、半田ワイヤを使
用してのワイヤボンディングを、前記金線を使用しての
ワイヤボンディングの場合と同様にボール式にて行うこ
とができるから、半田ワイヤを使用してのワイヤボンデ
ィングに際して、別の高温半田を使用することによるコ
ストのアップを招来することがないと共に、接合ミスが
発生することを大幅に低減できるのである。Therefore, according to the present invention, since the wire bonding using the solder wire can be performed by the ball method as in the case of the wire bonding using the gold wire, the solder wire is used. In this wire bonding, the cost is not increased by using another high temperature solder, and the occurrence of bonding error can be significantly reduced.

【００１５】[0015]

【実施例】次に、本発明を具体化した実施例について説
明する。図１〜図３の実施例は、コンデンサ素子１に温
度ヒューズとしての半田ワイヤ２を合成樹脂製パッケー
ジ（図示せず）内で接続付加したタンタル固体電解コン
デンサを製造する場合を示し、コンデンサ素子１は、タ
ンタル金属の陽極リード線３とタンタル金属粉末をプレ
ス成形した後焼結してなる陽極部と、その外周に陽極酸
化にて形成したタンタルの酸化皮膜と、その外周を覆う
固体電解質である二酸化マンガンと、その外周のグラフ
ァイトと、銀ペースト等の陰極側部位としての接続用皮
膜層とから成る。EXAMPLES Next, examples embodying the present invention will be described. 1 to 3 show the case of manufacturing a tantalum solid electrolytic capacitor in which a solder wire 2 as a temperature fuse is connected and added to a capacitor element 1 in a synthetic resin package (not shown). Is an anode lead wire 3 made of tantalum metal, an anode portion formed by press-molding tantalum metal powder and then sintering, a tantalum oxide film formed by anodic oxidation on the outer periphery thereof, and a solid electrolyte covering the outer periphery thereof. It is composed of manganese dioxide, graphite around the manganese dioxide, and a connecting coating layer as a cathode side portion such as silver paste.

【００１６】タンタル固体電解コンデンサにおける端子
部４，５は外部回路への接続用のものであり、前記合成
樹脂製パッケージから先端が突出すべきこれら端子部
４，５は、図１に示すようなリードフレーム６にて形成
してあり、陽極端子部４に前記リード線３を抵抗溶接等
により接合する。前記コンデンサ素子１における陰極側
部位としての接続用皮膜層と陰極端子部５との間を、
鉛、錫を主体とする低融点金属（融点３００℃程度）か
ら成る半田ワイヤ２にて接続する。The terminal portions 4 and 5 in the tantalum solid electrolytic capacitor are for connecting to an external circuit, and the terminal portions 4 and 5 whose tips should protrude from the synthetic resin package are as shown in FIG. It is formed of a lead frame 6, and the lead wire 3 is joined to the anode terminal portion 4 by resistance welding or the like. Between the connection coating layer as the cathode side portion of the capacitor element 1 and the cathode terminal portion 5,
Connection is made with a solder wire 2 made of a low melting point metal (melting point of about 300 ° C.) mainly containing lead and tin.

【００１７】半田ワイヤ２の直径は略５０μｍ〜１２０
μｍを使用する。直径８０μｍの場合１Ａ〜２Ａの電流
を流して１０秒で溶断し、直径１２０μｍの場合には５
Ａの電流を流すと５秒で溶断するものとする。次に半田
ワイヤ２によるワイヤボンディングの作業工程について
説明する。移送台８に沿って図１及び図３の矢印Ａ方向
に間欠的に移送させる前記リードフレーム６を、その移
送経路内に設けたヒータブロック７にて加熱するように
構成し、移送台８の上面のカバー体９との間にトンネル
空間１０を形成し、移送台８とカバー体９との隙間など
から還元性ガスをトンネル空間１０内に供給するように
構成する。還元性ガスは、水素を１（体積％）〜１５
（体積％）、残部窒素等の不活性ガスからなる。The diameter of the solder wire 2 is approximately 50 μm to 120 μm.
Use μm. When the diameter is 80 μm, a current of 1 A to 2 A is applied to melt it in 10 seconds, and when the diameter is 120 μm, it is 5
When the current of A is passed, it will melt in 5 seconds. Next, a work process of wire bonding with the solder wire 2 will be described. The lead frame 6, which is intermittently transferred along the transfer table 8 in the direction of arrow A in FIGS. 1 and 3, is configured to be heated by the heater block 7 provided in the transfer path. A tunnel space 10 is formed between the cover body 9 on the upper surface, and the reducing gas is supplied into the tunnel space 10 through a gap between the transfer table 8 and the cover body 9 or the like. The reducing gas contains hydrogen at 1 (volume%) to 15
(% By volume), the balance consisting of an inert gas such as nitrogen.

【００１８】前記カバー体９の上面には、トンネル空間
１０に連通する開口部１１を前記リードフレーム６の移
送経路に沿って適宜間隔で複数設ける。一つの開口部１
１の上方に半田ワイヤ２を挿通したキャピラリツール１
２を昇降動可能に配置し、該開口部１１の下方のトンネ
ル空間１０内には、後述するボール部２ａ，２ｂを形成
するためのトーチ１３を左右首振り動するように配置す
る。また、他方の開口部１１には押圧ツール１４を前記
コンデンサ素子１の上面に対して昇降動可能に設け、前
記トーチ１３と押圧ツール１４との間のトンネル空間１
０内には、押し込み片１５を進退動可能に配置する。On the upper surface of the cover body 9, a plurality of openings 11 communicating with the tunnel space 10 are provided at appropriate intervals along the transfer path of the lead frame 6. One opening 1
Capillary tool 1 with solder wire 2 inserted above
2 is arranged so as to be able to move up and down, and in a tunnel space 10 below the opening 11, a torch 13 for forming ball portions 2a and 2b described later is arranged so as to swing left and right. A pressing tool 14 is provided in the other opening 11 so as to be movable up and down with respect to the upper surface of the capacitor element 1, and the tunnel space 1 between the torch 13 and the pressing tool 14 is provided.
The push-in piece 15 is arranged in 0 so as to be movable back and forth.

【００１９】後述のように、トンネル空間１０から開口
部１１を介して上方に吹き上げる還元性ガスにて半田ワ
イヤ２の切断箇所の周りを還元性雰囲気とし、この還元
性ガス雰囲気中で、後述のようにトーチ１３からの酸水
素炎にて半田ワイヤ２の先端（下端）にボール部２ａを
形成し、加熱されたリードフレーム６の陰極端子部５表
面に向かってキャピラリツール１２を下降させてボール
部２ａを押圧することで、当該ボール部２ａの表面に酸
化皮膜が形成されることなく、ボールボンディングし、
次いで、キャピラリツール１２を引き上げると、陰極端
子部５からキャピラリツール１２の下端まで、半田ワイ
ヤ２の支柱部ができる。As described later, a reducing gas blown upward from the tunnel space 10 through the opening 11 forms a reducing atmosphere around the cut portion of the solder wire 2, and in this reducing gas atmosphere, As described above, the ball portion 2a is formed at the tip (lower end) of the solder wire 2 by the oxyhydrogen flame from the torch 13, and the capillary tool 12 is lowered toward the surface of the cathode terminal portion 5 of the heated lead frame 6 to make the ball. By pressing the portion 2a, ball bonding is performed without forming an oxide film on the surface of the ball portion 2a,
Then, when the capillary tool 12 is pulled up, a column portion of the solder wire 2 is formed from the cathode terminal portion 5 to the lower end of the capillary tool 12.

【００２０】次いで、トンネル空間１０から開口部１１
を介して上方に吹き上げる還元性ガスにて半田ワイヤ２
の切断箇所の周りを還元性雰囲気とし、この還元性雰囲
気内で、前記トーチ１３から酸素ガスと水素ガスの混合
ガスを噴出させてなる直径0.5 ｍｍ程度の炎（酸水素
炎）を、0.05秒〜1 秒程度の間、前記半田ワイヤ２に接
近させ（炎自体を半田ワイヤ２に接触させても良いし、
炎を半田ワイヤ２に接触させないでも良い）、半田ワイ
ヤ２を切断（溶断）すると、該溶断部の両端は溶融した
半田金属自体の表面張力にて球状のボール部２ａ，２ｂ
が成形できる。この場合、両ボール部２ａ，２ｂの溶融
金属中の酸素が前記還元性ガスにて還元作用を受け、各
ボール部表面の酸化皮膜の形成が妨げられる。Next, from the tunnel space 10 to the opening 11
Solder wire 2 with reducing gas blown upward through
A reducing atmosphere is provided around the cutting point, and a flame (oxyhydrogen flame) with a diameter of about 0.5 mm formed by ejecting a mixed gas of oxygen gas and hydrogen gas from the torch 13 in the reducing atmosphere is released for 0.05 seconds. The solder wire 2 is brought close to the solder wire 2 for about 1 second (the flame itself may be brought into contact with the solder wire 2,
When the solder wire 2 is cut (blown), the both ends of the fused portion are spherical ball portions 2a and 2b due to the surface tension of the molten solder metal itself.
Can be molded. In this case, oxygen in the molten metal of both ball portions 2a and 2b is reduced by the reducing gas, and the formation of an oxide film on the surface of each ball portion is prevented.

【００２１】そして、この切断後、キャピラリツール１
２を適宜寸法下降させると、当該キャピラリツール１２
の下端にボール部２ａが接当し、次の箇所の陰極端子部
５へのボールボンディングの準備が整う。この作業と同
時に、リードフレーム６を矢印Ａ方向に適宜距離だけ移
動させた後停止し、前記切断にて形成された上端のボー
ル部２ｂを、コンデンサ素子１の陰極側部位（接続用皮
膜層）の表面に臨むように、半田ワイヤ２の中途部を押
し込み片１５にて屈曲させたのち、再度リードフレーム
６を矢印Ａ方向に適宜距離だけ移動させ、他方の開口部
１１箇所で、前記ボール部２ｂを押圧ツール１４にてコ
ンデンサ素子１に圧接（熱圧着）すれば良い。After this cutting, the capillary tool 1
When the size of 2 is lowered appropriately, the capillary tool 12
The ball portion 2a comes into contact with the lower end of the above, and the ball bonding to the cathode terminal portion 5 at the next location is ready. At the same time as this work, the lead frame 6 is moved by an appropriate distance in the direction of arrow A and then stopped, and the ball portion 2b at the upper end formed by the cutting is connected to the cathode side portion (connection coating layer) of the capacitor element 1. The middle portion of the solder wire 2 is bent by the pushing piece 15 so as to face the surface of the lead wire 6, and then the lead frame 6 is moved again by an appropriate distance in the direction of the arrow A, and the ball portion is formed at the other 11 openings. 2b may be pressed (thermocompression bonded) to the capacitor element 1 by the pressing tool 14.

【００２２】図４の第２実施例では、リードフレーム６
に取付く半田ワイヤ２の長さが長い場合を示し、ヒータ
ブロック７とこれに載置するリードフレーム６とを覆う
カバー体１６の高さ寸法を低くなるように形成し、前記
還元性ガスを通過させるトンネル空間１０の高さ寸法を
低くする。従って、リードフレーム６に下端のボール部
２ａをボールボンディングさせて立設する半田ワイヤ２
の上端は、カバー体１６上面に開口部１７から上方に突
出する。この状態で半田ワイヤ２の中途部にトーチ１３
からの酸水素炎にて溶断すると同時にボール部２ａ，２
ｂを形成するに際して、カバー体１６より上方に配置し
た放出パイプ１８の放出口１８ａを前記トーチ１３から
の酸水素炎と対向するように臨ませ、この放出パイプ１
８と前記カバー体１６における開口部１７とから還元性
ガスを噴出させ、前記トーチ１３による半田ワイヤ２の
切断とボール部形成の近傍を還元性雰囲気になるように
するのである。In the second embodiment of FIG. 4, the lead frame 6
The case where the length of the solder wire 2 attached to the heater block 7 is long is shown, and the height dimension of the cover body 16 that covers the heater block 7 and the lead frame 6 mounted on the heater block 7 is formed to be low, and the reducing gas is added. The height dimension of the tunnel space 10 to be passed is reduced. Therefore, the solder wire 2 is formed by ball-bonding the ball portion 2a at the lower end to the lead frame 6 and standing up
The upper end of the above protrudes upward from the opening 17 on the upper surface of the cover body 16. In this state, the torch 13 is placed in the middle of the solder wire 2.
The ball portions 2a, 2
When forming b, the discharge port 18a of the discharge pipe 18 arranged above the cover body 16 is made to face the oxyhydrogen flame from the torch 13, and the discharge pipe 1
A reducing gas is ejected from the opening 8 and the opening 17 in the cover body 16 so that the vicinity of the cutting of the solder wire 2 by the torch 13 and the formation of the ball portion becomes a reducing atmosphere.

【００２３】図５の第３実施例では、前記還元性ガスを
通過させるトンネル空間１０を形成する低い高さのカバ
ー体１９に加え、その上方に配置する放出パイプ２０内
にトーチ１３を配置した形態としたものである。この実
施例によれば、放出パイプ２０からの還元性ガスの噴出
方向と、トーチ１３からの酸水素炎の放出方向とが同じ
向きであるから、酸水素炎の乱れが少なくなり、ボール
部２ａ，２ｂの形成が安定するという効果がある。ま
た、カバー体１９の開口部２１近傍にてボールを形成し
ようとする場合は、放出パイプ２０を省略することも可
能である。In the third embodiment of FIG. 5, in addition to the cover body 19 having a low height which forms the tunnel space 10 through which the reducing gas passes, the torch 13 is arranged in the discharge pipe 20 arranged above the cover body 19. It is a form. According to this embodiment, the direction in which the reducing gas is ejected from the discharge pipe 20 and the direction in which the oxyhydrogen flame is discharged from the torch 13 are the same, so that the turbulence of the oxyhydrogen flame is reduced and the ball portion 2a is reduced. , 2b is stabilized. Further, when a ball is to be formed near the opening 21 of the cover body 19, the discharge pipe 20 can be omitted.

【００２４】なお、前記第２実施例及び第３実施例にお
いては、カバー体１６，１９における開口部１７，２１
の箇所で、溶断した半田ワイヤ２の上端部をトンネル空
間１０内に入れるように、リードフレーム６から立設し
た半田ワイヤ２を屈曲させる必要がある。また、前記半
田ワイヤ２を溶断し、ボール部を形成するときだけ、放
出パイプ１８，２０からの還元性ガスの放出を実行する
ようにすれば、還元正ガスの消費量（放出量）を節約す
ることができる。Incidentally, in the second and third embodiments, the openings 17, 21 in the cover bodies 16, 19 are formed.
At this point, it is necessary to bend the solder wire 2 erected from the lead frame 6 so that the upper end of the melted solder wire 2 can enter the tunnel space 10. Further, if the reducing gas is discharged from the discharge pipes 18 and 20 only when the solder wire 2 is melted and the ball portion is formed, the consumption amount (release amount) of the reducing positive gas is saved. can do.

【００２５】また、トンネル空間１０に放出する還元性
ガスの供給通路を、ヒータブロック７や移送台８に形成
するようにしても良い。前述のように、前記還元性ガス
による還元性雰囲気中にてワークを加熱すれば、ワーク
の加熱に際して、ワークの表面が酸化することを防止で
きるから、半田ワイヤの接合強度及び接合の確実性を向
上させることができる。Further, the supply path of the reducing gas discharged into the tunnel space 10 may be formed in the heater block 7 or the transfer table 8. As described above, if the work is heated in the reducing atmosphere with the reducing gas, the surface of the work can be prevented from being oxidized when the work is heated. Can be improved.

【００２６】なお、キャピラリツールに挿通した半田ワ
イヤの端部を図示しない機械的手段等により、予めボー
ルのない切断部に形成し、この切断端部を還元性雰囲気
中で酸水素炎にて加熱することにより、半田ボール部を
成形することができることは言うまでもない。さらに、
このように半田ワイヤの端部に形成した半田のボール部
を、電子部品の配線回路表面等に押圧した後キャピラリ
ツールを引き上げて、ボール部の根本から半田ワイヤを
引き離すことにより、従来と同様にして半田バンプを形
成することも可能である。The end of the solder wire inserted into the capillary tool is previously formed into a ball-free cut portion by a mechanical means (not shown), and the cut end is heated with an oxyhydrogen flame in a reducing atmosphere. Needless to say, by doing so, the solder ball portion can be molded. further,
In this way, the solder ball formed at the end of the solder wire is pressed against the surface of the wiring circuit of the electronic component, after which the capillary tool is pulled up, and the solder wire is pulled away from the root of the ball, in the same manner as in the past. It is also possible to form solder bumps.

【図面の簡単な説明】[Brief description of drawings]

【図１】本発明における実施例を示す斜視図である。FIG. 1 is a perspective view showing an embodiment of the present invention.

【図２】要部拡大断面図である。FIG. 2 is an enlarged sectional view of a main part.

【図３】図２のIII −III 視断面図である。FIG. 3 is a sectional view taken along line III-III in FIG.

【図４】第２実施例を示す断面図である。FIG. 4 is a sectional view showing a second embodiment.

【図５】第３実施例を示す断面図である。FIG. 5 is a sectional view showing a third embodiment.

【符号の説明】[Explanation of symbols]

１ コンデンサ素子 ２ 半田ワイヤ ２ａ，２ｂ ボール部 ３ 陽極リード線 ４ 陽極端子部 ５ 陰極端子部 ６ リードフレーム ７ ヒータブロック ９ カバー体 １０ トンネル空間 １１ 開口部 １２ キャピラリツール １３ トーチ １４ 押圧ツール １５ 押し込み片 DESCRIPTION OF SYMBOLS 1 Capacitor element 2 Solder wires 2a, 2b Ball portion 3 Anode lead wire 4 Anode terminal portion 5 Cathode terminal portion 6 Lead frame 7 Heater block 9 Cover body 10 Tunnel space 11 Opening portion 12 Capillary tool 13 Torch 14 Pressing tool 15 Pushing piece

Claims (1)

【特許請求の範囲】[Claims] 【請求項１】リードフレーム等のワークの近傍を還元性
雰囲気に形成し、該還元性雰囲気中にて、キャピラリツ
ールに挿通した半田ワイヤを、酸素ガスと水素ガスとの
混合ガスからなる酸水素炎にて切断する同時に、その切
断の両端部にボール部をそれぞれ形成し、該各ボール部
を前記ワークに接合することを特徴とする半田ワイヤに
よるワイヤボンディング方法。1. A reducing atmosphere is formed in the vicinity of a work such as a lead frame, and a solder wire inserted into a capillary tool in the reducing atmosphere is treated with oxyhydrogen composed of a mixed gas of oxygen gas and hydrogen gas. A wire bonding method using a solder wire, characterized in that at the same time as cutting with a flame, ball parts are formed at both ends of the cutting and the ball parts are bonded to the work.
JP4130746A 1992-04-22 1992-05-22 Wire bonding method using solder wire Expired - Fee Related JP3016956B2 (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP4130746A JP3016956B2 (en) 1992-05-22 1992-05-22 Wire bonding method using solder wire
US08/063,667 US5295619A (en) 1992-05-22 1993-05-20 Method and apparatus for performing wire bonding by using solder wire
DE4317131A DE4317131C2 (en) 1992-05-22 1993-05-21 Method and device for performing wire contacting using solder wire
US08/169,625 US5395037A (en) 1992-04-22 1993-12-20 Method and apparatus for performing wire bonding by using solder wire

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4130746A JP3016956B2 (en) 1992-05-22 1992-05-22 Wire bonding method using solder wire

Publications (2)

Publication Number Publication Date
JPH05326602A true JPH05326602A (en) 1993-12-10
JP3016956B2 JP3016956B2 (en) 2000-03-06

Family

ID=15041649

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4130746A Expired - Fee Related JP3016956B2 (en) 1992-04-22 1992-05-22 Wire bonding method using solder wire

Country Status (1)

Country Link
JP (1) JP3016956B2 (en)

Also Published As

Publication number Publication date
JP3016956B2 (en) 2000-03-06

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