JPH053146B2 - - Google Patents
Info
- Publication number
- JPH053146B2 JPH053146B2 JP57224160A JP22416082A JPH053146B2 JP H053146 B2 JPH053146 B2 JP H053146B2 JP 57224160 A JP57224160 A JP 57224160A JP 22416082 A JP22416082 A JP 22416082A JP H053146 B2 JPH053146 B2 JP H053146B2
- Authority
- JP
- Japan
- Prior art keywords
- alloy film
- impurity
- semiconductor device
- doping
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/01—Manufacture or treatment
- H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
- H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
- H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/01—Manufacture or treatment
- H10D84/02—Manufacture or treatment characterised by using material-based technologies
- H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
- H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
Landscapes
- Electrodes Of Semiconductors (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57224160A JPS59114868A (ja) | 1982-12-21 | 1982-12-21 | 半導体装置の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57224160A JPS59114868A (ja) | 1982-12-21 | 1982-12-21 | 半導体装置の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS59114868A JPS59114868A (ja) | 1984-07-03 |
| JPH053146B2 true JPH053146B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1993-01-14 |
Family
ID=16809466
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57224160A Granted JPS59114868A (ja) | 1982-12-21 | 1982-12-21 | 半導体装置の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59114868A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2512603B2 (ja) * | 1990-06-06 | 1996-07-03 | 松下電器産業株式会社 | 半導体装置の製造方法 |
| WO2002073700A1 (en) * | 2001-03-02 | 2002-09-19 | National Institute For Materials Science | Gate and cmos structure and mos structure |
| JP2005136198A (ja) | 2003-10-30 | 2005-05-26 | Toshiba Corp | 半導体装置の製造方法 |
-
1982
- 1982-12-21 JP JP57224160A patent/JPS59114868A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS59114868A (ja) | 1984-07-03 |