JPH05303207A - リソグラフィ用現像液及びリソグラフィ工程 - Google Patents
リソグラフィ用現像液及びリソグラフィ工程Info
- Publication number
- JPH05303207A JPH05303207A JP4233080A JP23308092A JPH05303207A JP H05303207 A JPH05303207 A JP H05303207A JP 4233080 A JP4233080 A JP 4233080A JP 23308092 A JP23308092 A JP 23308092A JP H05303207 A JPH05303207 A JP H05303207A
- Authority
- JP
- Japan
- Prior art keywords
- surfactant
- resist
- developer
- lithographic
- pattern
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000001459 lithography Methods 0.000 title claims abstract description 12
- 238000000034 method Methods 0.000 title claims description 28
- 239000004094 surface-active agent Substances 0.000 claims abstract description 72
- 238000004090 dissolution Methods 0.000 claims abstract description 16
- 230000015572 biosynthetic process Effects 0.000 claims abstract description 5
- 229910021642 ultra pure water Inorganic materials 0.000 claims description 26
- 239000012498 ultrapure water Substances 0.000 claims description 26
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims description 22
- 239000000758 substrate Substances 0.000 claims description 7
- 125000003277 amino group Chemical group 0.000 claims description 5
- 238000011161 development Methods 0.000 claims description 5
- IAYPIBMASNFSPL-UHFFFAOYSA-N Ethylene oxide Chemical group C1CO1 IAYPIBMASNFSPL-UHFFFAOYSA-N 0.000 claims description 3
- POLCUAVZOMRGSN-UHFFFAOYSA-N dipropyl ether Chemical group CCCOCCC POLCUAVZOMRGSN-UHFFFAOYSA-N 0.000 claims description 3
- 239000007788 liquid Substances 0.000 claims description 2
- 239000000243 solution Substances 0.000 description 29
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 17
- 229910052710 silicon Inorganic materials 0.000 description 17
- 239000010703 silicon Substances 0.000 description 17
- 238000004140 cleaning Methods 0.000 description 9
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 8
- 230000007261 regionalization Effects 0.000 description 6
- 238000005406 washing Methods 0.000 description 5
- 230000018109 developmental process Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 229920002120 photoresistant polymer Polymers 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- 238000004833 X-ray photoelectron spectroscopy Methods 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 230000006866 deterioration Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 230000003746 surface roughness Effects 0.000 description 3
- 238000000026 X-ray photoelectron spectrum Methods 0.000 description 2
- 150000001412 amines Chemical class 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000007654 immersion Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 239000012190 activator Substances 0.000 description 1
- 230000003254 anti-foaming effect Effects 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000005868 electrolysis reaction Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 231100000989 no adverse effect Toxicity 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 239000012466 permeate Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 230000004304 visual acuity Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/30—Imagewise removal using liquid means
- G03F7/32—Liquid compositions therefor, e.g. developers
- G03F7/322—Aqueous alkaline compositions
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Priority Applications (7)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW082100661A TW259850B (enrdf_load_stackoverflow) | 1992-02-07 | 1993-02-02 | |
| EP93300883A EP0555098B1 (en) | 1992-02-07 | 1993-02-05 | Lithographic developer and lithographic process |
| DE69325043T DE69325043T2 (de) | 1992-02-07 | 1993-02-05 | Lithographischer Entwickler und lithographisches Verfahren |
| AT93300883T ATE180583T1 (de) | 1992-02-07 | 1993-02-05 | Lithographischer entwickler und lithographisches verfahren |
| MYPI93000187A MY121957A (en) | 1992-02-07 | 1993-02-05 | Lithographic developer and lithographic process. |
| KR1019930001611A KR960015482B1 (ko) | 1992-02-07 | 1993-02-06 | 리토그라피용 현상액 및 리토그라피 공정 |
| US08/395,182 US6007970A (en) | 1992-02-07 | 1995-02-27 | Lithographic developer containing surfactant |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4-57081 | 1992-02-07 | ||
| JP5708192 | 1992-02-07 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH05303207A true JPH05303207A (ja) | 1993-11-16 |
Family
ID=13045534
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4233080A Pending JPH05303207A (ja) | 1992-02-07 | 1992-08-07 | リソグラフィ用現像液及びリソグラフィ工程 |
| JP4233082A Pending JPH05303208A (ja) | 1992-02-07 | 1992-08-07 | リソグラフィ用現像液及びリソグラフィ工程 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4233082A Pending JPH05303208A (ja) | 1992-02-07 | 1992-08-07 | リソグラフィ用現像液及びリソグラフィ工程 |
Country Status (4)
| Country | Link |
|---|---|
| JP (2) | JPH05303207A (enrdf_load_stackoverflow) |
| KR (1) | KR960015482B1 (enrdf_load_stackoverflow) |
| MY (1) | MY121957A (enrdf_load_stackoverflow) |
| TW (1) | TW259850B (enrdf_load_stackoverflow) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5848321A (en) * | 1995-12-20 | 1998-12-08 | Samsung Electronics Co., Ltd. | Method for automatically controlling transfer voltage in printer using electrophotography system |
| US6742944B2 (en) | 2001-05-14 | 2004-06-01 | Kabushiki Kaisha Toshiba | Alkaline solution and manufacturing method, and alkaline solution applied to pattern forming method, resist film removing method, solution application method, substrate treatment method, solution supply method, and semiconductor device manufacturing method |
| JP2011215244A (ja) * | 2010-03-31 | 2011-10-27 | Hoya Corp | レジスト層の現像剤、レジストパターンの形成方法及びモールドの製造方法 |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP7357535B2 (ja) * | 2019-12-17 | 2023-10-06 | 三井化学株式会社 | アルキレンオキシド重合体の製造方法 |
| JP7422530B2 (ja) * | 2019-12-17 | 2024-01-26 | 三井化学株式会社 | アルキレンオキシド重合体の曇点測定用溶媒 |
-
1992
- 1992-08-07 JP JP4233080A patent/JPH05303207A/ja active Pending
- 1992-08-07 JP JP4233082A patent/JPH05303208A/ja active Pending
-
1993
- 1993-02-02 TW TW082100661A patent/TW259850B/zh not_active IP Right Cessation
- 1993-02-05 MY MYPI93000187A patent/MY121957A/en unknown
- 1993-02-06 KR KR1019930001611A patent/KR960015482B1/ko not_active Expired - Lifetime
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5848321A (en) * | 1995-12-20 | 1998-12-08 | Samsung Electronics Co., Ltd. | Method for automatically controlling transfer voltage in printer using electrophotography system |
| US6742944B2 (en) | 2001-05-14 | 2004-06-01 | Kabushiki Kaisha Toshiba | Alkaline solution and manufacturing method, and alkaline solution applied to pattern forming method, resist film removing method, solution application method, substrate treatment method, solution supply method, and semiconductor device manufacturing method |
| US7097960B2 (en) | 2001-05-14 | 2006-08-29 | Kabushiki Kaisha Toshiba | Alkaline solution and manufacturing method, and alkaline solution applied to pattern forming method, resist film removing method, solution application method, substrate treatment method, solution supply method, and semiconductor device manufacturing method |
| US7399578B2 (en) | 2001-05-14 | 2008-07-15 | Kabushiki Kaisha Toshiba | Alkaline solution and manufacturing method, and alkaline solution applied to pattern forming method, resist film removing method, solution application method, substrate treatment method, solution supply method, and semiconductor device manufacturing method |
| JP2011215244A (ja) * | 2010-03-31 | 2011-10-27 | Hoya Corp | レジスト層の現像剤、レジストパターンの形成方法及びモールドの製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| MY121957A (en) | 2006-03-31 |
| KR960015482B1 (ko) | 1996-11-14 |
| JPH05303208A (ja) | 1993-11-16 |
| KR930018651A (ko) | 1993-09-22 |
| TW259850B (enrdf_load_stackoverflow) | 1995-10-11 |
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