JPH0529990B2 - - Google Patents
Info
- Publication number
- JPH0529990B2 JPH0529990B2 JP60145655A JP14565585A JPH0529990B2 JP H0529990 B2 JPH0529990 B2 JP H0529990B2 JP 60145655 A JP60145655 A JP 60145655A JP 14565585 A JP14565585 A JP 14565585A JP H0529990 B2 JPH0529990 B2 JP H0529990B2
- Authority
- JP
- Japan
- Prior art keywords
- line
- bit
- input
- sense
- transistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000000872 buffer Substances 0.000 claims description 56
- 239000004065 semiconductor Substances 0.000 claims description 6
- 240000007320 Pinus strobus Species 0.000 description 11
- 238000001514 detection method Methods 0.000 description 10
- 230000003068 static effect Effects 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 239000003990 capacitor Substances 0.000 description 4
- 230000000295 complement effect Effects 0.000 description 4
- 230000008878 coupling Effects 0.000 description 3
- 238000010168 coupling process Methods 0.000 description 3
- 238000005859 coupling reaction Methods 0.000 description 3
- 230000008859 change Effects 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 230000004913 activation Effects 0.000 description 1
- 238000007792 addition Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000001808 coupling effect Effects 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000010363 phase shift Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
- G11C7/1078—Data input circuits, e.g. write amplifiers, data input buffers, data input registers, data input level conversion circuits
- G11C7/1084—Data input buffers, e.g. comprising level conversion circuits, circuits for adapting load
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
- G11C7/1015—Read-write modes for single port memories, i.e. having either a random port or a serial port
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
- G11C7/1051—Data output circuits, e.g. read-out amplifiers, data output buffers, data output registers, data output level conversion circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
- G11C7/1078—Data input circuits, e.g. write amplifiers, data input buffers, data input registers, data input level conversion circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
- G11C7/1078—Data input circuits, e.g. write amplifiers, data input buffers, data input registers, data input level conversion circuits
- G11C7/1096—Write circuits, e.g. I/O line write drivers
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US06/626,791 US4630240A (en) | 1984-07-02 | 1984-07-02 | Dynamic memory with intermediate column derode |
US626791 | 1990-12-11 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP3052583A Division JPH04212775A (ja) | 1984-07-02 | 1991-03-18 | 半導体メモリデバイス |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS6177194A JPS6177194A (ja) | 1986-04-19 |
JPH0529990B2 true JPH0529990B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1993-05-06 |
Family
ID=24511868
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP60145655A Granted JPS6177194A (ja) | 1984-07-02 | 1985-07-02 | 半導体読み出し書込みメモリデバイス |
JP3052583A Pending JPH04212775A (ja) | 1984-07-02 | 1991-03-18 | 半導体メモリデバイス |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP3052583A Pending JPH04212775A (ja) | 1984-07-02 | 1991-03-18 | 半導体メモリデバイス |
Country Status (2)
Country | Link |
---|---|
US (1) | US4630240A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) |
JP (2) | JPS6177194A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61292292A (ja) * | 1985-06-19 | 1986-12-23 | Toshiba Corp | 半導体記憶装置 |
US4725945A (en) * | 1984-09-18 | 1988-02-16 | International Business Machines Corp. | Distributed cache in dynamic rams |
US4979145A (en) * | 1986-05-01 | 1990-12-18 | Motorola, Inc. | Structure and method for improving high speed data rate in a DRAM |
JPS63239675A (ja) * | 1986-11-27 | 1988-10-05 | Toshiba Corp | 半導体記憶装置 |
JP2795846B2 (ja) * | 1987-11-25 | 1998-09-10 | 株式会社東芝 | 半導体装置 |
JPH0752583B2 (ja) * | 1987-11-30 | 1995-06-05 | 株式会社東芝 | 半導体メモリ |
JP2873033B2 (ja) * | 1989-01-23 | 1999-03-24 | テキサス インスツルメンツ インコーポレイテツド | コラム選択回路 |
KR920001082B1 (ko) * | 1989-06-13 | 1992-02-01 | 삼성전자 주식회사 | 반도체 메모리장치에 있어서 메모리 테스트용 멀티바이트 광역 병렬 라이트회로 |
KR100224054B1 (ko) * | 1989-10-13 | 1999-10-15 | 윌리엄 비. 켐플러 | 동기 벡터 프로세서내의 비디오신호를 연속 프로세싱 하기 위한 회로 및 이의 작동 방법 |
US7251249B2 (en) * | 2000-01-26 | 2007-07-31 | Tundra Semiconductor Corporation | Integrated high speed switch router using a multiport architecture |
FR2826170B1 (fr) * | 2001-06-15 | 2003-12-12 | Dolphin Integration Sa | Memoire rom a points memoire multibit |
US7031218B2 (en) * | 2002-11-18 | 2006-04-18 | Infineon Technologies Ag | Externally clocked electrical fuse programming with asynchronous fuse selection |
FR2855902B1 (fr) * | 2003-06-04 | 2005-08-26 | St Microelectronics Sa | Amplificateur de lecture desequilibre dynamiquement |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4094012A (en) * | 1976-10-01 | 1978-06-06 | Intel Corporation | Electrically programmable MOS read-only memory with isolated decoders |
US4533843A (en) * | 1978-09-07 | 1985-08-06 | Texas Instruments Incorporated | High performance dynamic sense amplifier with voltage boost for row address lines |
JPS5958689A (ja) * | 1982-09-28 | 1984-04-04 | Fujitsu Ltd | 半導体記憶装置 |
-
1984
- 1984-07-02 US US06/626,791 patent/US4630240A/en not_active Expired - Lifetime
-
1985
- 1985-07-02 JP JP60145655A patent/JPS6177194A/ja active Granted
-
1991
- 1991-03-18 JP JP3052583A patent/JPH04212775A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
JPS6177194A (ja) | 1986-04-19 |
JPH04212775A (ja) | 1992-08-04 |
US4630240A (en) | 1986-12-16 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US4931994A (en) | Static semiconductor memory with section and block sense amplifiers | |
JP2519593B2 (ja) | 半導体記憶装置 | |
US5127739A (en) | CMOS sense amplifier with bit line isolation | |
US4817057A (en) | Semiconductor memory device having improved precharge scheme | |
US4675850A (en) | Semiconductor memory device | |
US4125878A (en) | Memory circuit | |
US4627033A (en) | Sense amplifier with reduced instantaneous power | |
JPS61113188A (ja) | 改良されたアドレス・カウンタを有する半導体メモリ装置 | |
JPH0120515B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | ||
JPS60136086A (ja) | 半導体記憶装置 | |
JP2560020B2 (ja) | 半導体記憶装置 | |
US4661930A (en) | High speed testing of integrated circuit | |
US4608670A (en) | CMOS sense amplifier with N-channel sensing | |
US4397003A (en) | Dynamic random access memory | |
KR960008451B1 (ko) | 반도체 기억 장치 | |
JPH0529990B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | ||
US6549470B2 (en) | Small signal, low power read data bus driver for integrated circuit devices incorporating memory arrays | |
US4054865A (en) | Sense latch circuit for a bisectional memory array | |
US6704238B2 (en) | Semiconductor memory device including data bus pairs respectively dedicated to data writing and data reading | |
JPH0587916B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | ||
US5343433A (en) | CMOS sense amplifier | |
USRE34026E (en) | CMOS sense amplifier with N-channel sensing | |
US7133303B2 (en) | Dynamic type semiconductor memory apparatus | |
US6314033B1 (en) | Semiconductor memory device with redundancy circuit | |
US6542421B2 (en) | Semiconductor memory device with redundancy circuit |