JPH05289309A - Reticle and its production - Google Patents

Reticle and its production

Info

Publication number
JPH05289309A
JPH05289309A JP9520392A JP9520392A JPH05289309A JP H05289309 A JPH05289309 A JP H05289309A JP 9520392 A JP9520392 A JP 9520392A JP 9520392 A JP9520392 A JP 9520392A JP H05289309 A JPH05289309 A JP H05289309A
Authority
JP
Japan
Prior art keywords
light
shielding film
reticle
substrate
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP9520392A
Other languages
Japanese (ja)
Inventor
Masahiro Urakuchi
雅弘 浦口
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP9520392A priority Critical patent/JPH05289309A/en
Publication of JPH05289309A publication Critical patent/JPH05289309A/en
Withdrawn legal-status Critical Current

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  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Electron Beam Exposure (AREA)

Abstract

PURPOSE:To prevent the charge-up and surface flaw by forming the reticle with a substrate having a through-hole at the periphery and a patterned light- shielding film formed on the substrate. CONSTITUTION:A reticle 1 is provided with a chromium light-shielding film 3a patterned on a quartz substrate 2, and a through-hole 2a is formed at the periphery of the substrate 2. In this case, a conductive pin is brought into contact with the light-shielding film, which is exposed with an electron beam. Accordingly, continuity is secured, a resist film formed on the light-shielding film need not be released, hence the adhesiveness between the resist film and substrate 2 is not reduced, and the film is not flawed. Further, if the resist film on the through-hole 2a is also exposed, the light-shielding film 3a at this position is etched off, hence the continuity by the conductive pin is broken, and the end point of etching is detected.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は、レチクル及びその製造
方法の改良に関するものである。遮光膜を基板の表面に
形成した乾板の表面にレジスト膜を形成し、このレジス
ト膜を電子ビームを用いて露光する工程において、電子
による乾板のチャージアップを防止するために、乾板の
周縁部のレジスト膜を剥離して導通ピンを遮光膜に接触
させて蓄積されている電荷を除去しているが、導通が不
充分でありかつ剥離したレジストが表面欠陥の原因とな
り、レチクルの製造歩留りを低下させている。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an improved reticle and a method of manufacturing the reticle. In the step of forming a resist film on the surface of the dry plate having the light-shielding film formed on the surface of the substrate and exposing the resist film with an electron beam, in order to prevent the dry plate from being charged up by electrons, The resist film is peeled off and the conductive pins are brought into contact with the light-shielding film to remove the accumulated charge, but the conduction is insufficient and the peeled resist causes surface defects, reducing the reticle manufacturing yield. I am letting you.

【0002】以上のような状況から、遮光膜による導通
を確実に取ることが可能で、レジスト膜の剥離に起因す
る表面欠陥を防止することが可能なレチクルの製造方法
が要望されている。
Under the circumstances as described above, there is a demand for a reticle manufacturing method which can surely establish conduction by a light-shielding film and can prevent surface defects due to peeling of a resist film.

【0003】[0003]

【従来の技術】従来のレチクル及びその製造方法を図3
及び図4により詳細に説明する。図3は従来のレチクル
を示す側断面図、図4は従来のレチクルの製造方法を工
程順に示す側断面図である。
2. Description of the Related Art A conventional reticle and its manufacturing method are shown in FIG.
And FIG. 4 will be described in detail. 3 is a side sectional view showing a conventional reticle, and FIG. 4 is a side sectional view showing a conventional reticle manufacturing method in the order of steps.

【0004】従来のレチクル11は図3に示すように、基
板12の表面にパターニングされた遮光膜13を備えたレチ
クルである。このような構造のレチクル11を製造するに
は、まず図4(a) に示すように基板12と遮光膜13とから
なる乾板の遮光膜13の表面の全面にレジストを塗布して
レジスト膜14を形成し、この乾板を載物台15の上に載置
する。
As shown in FIG. 3, the conventional reticle 11 is a reticle having a patterned light-shielding film 13 on the surface of a substrate 12. In order to manufacture the reticle 11 having such a structure, first, as shown in FIG. 4A, a resist is applied to the entire surface of the light-shielding film 13 of the dry plate composed of the substrate 12 and the light-shielding film 13 to form the resist film 14. And the dry plate is placed on the stage 15.

【0005】つぎに図4(b) に示すように周縁部のレジ
スト膜14の一部を剥離し、露出した遮光膜13に導通ピン
16を接触させて導通を取った状態で、電子ビームを用い
てレジスト膜14を所定のパターンに露光した後、レジス
ト膜14を現像してパターニングする。
Next, as shown in FIG. 4 (b), a part of the resist film 14 at the peripheral portion is peeled off, and a conductive pin is attached to the exposed light-shielding film 13.
After the resist film 14 is exposed to a predetermined pattern by using an electron beam in a state where 16 is brought into contact with the conductive film, the resist film 14 is developed and patterned.

【0006】ついで図4(c) に示すようにパターニング
されたレジスト膜14をマスクとして遮光膜13をエッチン
グしてパターニングし、その後レジスト膜14を剥離して
図3に示すようなレチクル11を製造している。
Next, the light-shielding film 13 is etched and patterned by using the resist film 14 patterned as shown in FIG. 4C as a mask, and then the resist film 14 is peeled off to manufacture the reticle 11 as shown in FIG. is doing.

【0007】[0007]

【発明が解決しようとする課題】以上説明した従来のレ
チクルの製造方法においては、基板の表面の遮光膜の全
面に形成したレジスト膜の周縁部の一部を剥離し、露出
した遮光膜に導通ピンを接触させて導通を取った状態
で、電子ビームを用いて遮光膜を所定のパターンに露光
しているが、この方法では導通が不充分であり、かつ一
部のレジストを剥離するので残りのレジスト膜と基板と
の間の密着力に影響を及ぼし、またレジストの剥離カス
がゴミとなって表面欠陥の原因となり、レチクルの製造
歩留りを低下させているという問題点があった。
In the conventional method for manufacturing a reticle described above, a part of the peripheral edge of the resist film formed on the entire surface of the light-shielding film on the surface of the substrate is peeled off and the exposed light-shielding film is electrically connected. The light-shielding film is exposed to a predetermined pattern using an electron beam in the state where the pins are in contact with each other for conduction, but this method does not provide sufficient conduction, and some of the resist is stripped, so the remaining However, there is a problem in that the adhesive force between the resist film and the substrate is affected, and the resist debris turns into dust, causing surface defects and reducing the manufacturing yield of the reticle.

【0008】本発明は以上のような状況から、簡単な構
造の改良を加えた乾板を用い、遮光膜の表面に形成した
レジスト膜の周縁部の一部を剥離せずに、基板に設けた
貫通孔の側壁に形成された遮光膜に導通ピンを接触させ
て確実に導通を取り、電子ビームによりレジスト膜の露
光を行うことが可能となるレチクルの製造方法と、この
方法により製造したレチクルの提供を目的としたもので
ある。
In view of the above situation, the present invention uses a dry plate having a simple structure and is provided on the substrate without peeling off a part of the peripheral edge of the resist film formed on the surface of the light shielding film. A method for manufacturing a reticle capable of exposing a resist film with an electron beam by bringing a conductive pin into contact with a light-shielding film formed on a side wall of a through hole to ensure conduction, and a reticle manufactured by this method. It is intended to be provided.

【0009】[0009]

【課題を解決するための手段】本発明のレチクルは、周
縁部に貫通孔を有する基板と、この基板の表面に形成さ
れているパターニングされた遮光膜とからなるように構
成する。
The reticle of the present invention comprises a substrate having a through hole in its peripheral portion and a patterned light-shielding film formed on the surface of the substrate.

【0010】本発明のレチクルの製造方法は、上記のレ
チクルの製造方法であって、周縁部に貫通孔を有する基
板の表面に遮光膜が形成されており、この貫通孔の側壁
にも遮光膜が形成されている乾板の遮光膜の表面にレジ
スト膜を形成する工程と、この貫通孔の側壁に形成され
ている遮光膜に導通ピンを接触させた状態で、このレジ
スト膜を電子ビームを用いて露光する工程とを含むよう
に構成する。
The method of manufacturing a reticle of the present invention is the method of manufacturing a reticle described above, wherein a light-shielding film is formed on the surface of a substrate having a through hole in the peripheral portion, and the light-shielding film is also formed on the side wall of the through hole. The step of forming a resist film on the surface of the light-shielding film of the dry plate on which is formed, and the state where the conductive pin is brought into contact with the light-shielding film formed on the side wall of the through hole, the resist film is used with an electron beam. And exposing.

【0011】[0011]

【作用】即ち本発明においては、周縁部に貫通孔を有す
る基板の表面に遮光膜が形成されており、この貫通孔の
側壁にも表面の遮光膜と一体の遮光膜が形成されている
乾板のこの表面に形成されている遮光膜の全面にレジス
ト膜を形成し、この貫通孔の側壁に形成されている遮光
膜に導通ピンを接触させて導通を取り、この状態でレジ
スト膜を電子ビームを用いて露光するから確実に導通を
取ることが可能となり、また、遮光膜の表面に形成した
レジスト膜を剥離する必要がないので、一部のレジスト
を剥がすために生じるレジスト膜と基板との間の密着力
の低下及びレジストの剥離カスに起因する表面欠陥を防
止することが可能となる。
That is, in the present invention, the light-shielding film is formed on the surface of the substrate having the through-hole in the peripheral portion, and the side wall of the through-hole also has the light-shielding film integrated with the surface light-shielding film. A resist film is formed on the entire surface of the light-shielding film formed on this surface, and a conduction pin is brought into contact with the light-shielding film formed on the side wall of the through hole to establish conduction. Since it is possible to surely establish conduction because the exposure is performed using, and since it is not necessary to peel off the resist film formed on the surface of the light-shielding film, the resist film and the substrate that are generated to peel off a part of the resist It is possible to prevent a decrease in adhesion force between the surfaces and a surface defect caused by peeling residue of the resist.

【0012】[0012]

【実施例】以下図1〜図2により遮光膜がクロームの本
発明の一実施例について詳細に説明する。
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention in which the light shielding film is chrome will be described in detail below with reference to FIGS.

【0013】図1は本発明による一実施例のレチクルを
示す側断面図、図2は本発明による一実施例のレチクル
の製造方法を工程順に示す側断面図である。本発明によ
る一実施例のレチクル1は図1に示すように、板厚2.3m
m の石英からなる基板2の表面にパターニングされた膜
厚 5,000Åのクロームからなる遮光膜3aを備え、基板2
の周縁部に直径1〜10mmの貫通孔2aが形成されているレ
チクルである。
FIG. 1 is a side sectional view showing a reticle of one embodiment according to the present invention, and FIG. 2 is a side sectional view showing a method of manufacturing a reticle of one embodiment according to the present invention in the order of steps. The reticle 1 according to one embodiment of the present invention has a plate thickness of 2.3 m as shown in FIG.
The substrate 2 made of quartz with a thickness of 5,000 Å is provided on the surface of the substrate 2 with a light-shielding film 3a made of chrome.
Is a reticle in which a through hole 2a having a diameter of 1 to 10 mm is formed in the peripheral edge portion of.

【0014】このような構造のレチクル1を製造するに
は、まず図2(a) に示すような、周縁部に貫通孔2aを設
けた基板2の表面に遮光膜3aが形成されており、この貫
通孔2aの側壁にも遮光膜3bが形成されている乾板の遮光
膜3の全面にレジスト膜4を塗布し、載物台5に設けた
導通ピン6を基板2の周縁部に設けた貫通孔2aに挿入
し、この貫通孔2aの側壁に形成されている遮光膜3bに導
通ピン6を接触させて基板2を載物台5の表面に載置す
る。
In order to manufacture the reticle 1 having such a structure, first, as shown in FIG. 2 (a), the light shielding film 3a is formed on the surface of the substrate 2 having the through holes 2a in the peripheral portion, The resist film 4 is applied to the entire surface of the light-shielding film 3 of the dry plate in which the light-shielding film 3b is also formed on the side wall of the through hole 2a, and the conductive pin 6 provided on the stage 5 is provided on the peripheral portion of the substrate 2. The substrate 2 is placed on the surface of the mounting table 5 by inserting the substrate 2 into the through hole 2a and bringing the conductive pin 6 into contact with the light shielding film 3b formed on the side wall of the through hole 2a.

【0015】つぎに図2(b) に示すように、このように
して導通ピン6で導通を取った状態で電子ビームを用い
てレジスト膜4を所定のパターンに露光した後、レジス
ト膜4を現像してパターニングする。この際貫通孔2aの
位置のレジスト膜4も露光しておく。
Next, as shown in FIG. 2 (b), the resist film 4 is exposed to a predetermined pattern by using an electron beam in a state where the conductive pin 6 is thus conducted, and then the resist film 4 is exposed. Develop and pattern. At this time, the resist film 4 at the position of the through hole 2a is also exposed.

【0016】ついで図2(c) に示すようにパターニング
されたこのレジスト膜4をマスクとして遮光膜3aをエッ
チングしてパターニングし、その後レジスト膜4を剥離
して図1に示すようなレチクル1を製造している。電子
ビームにより貫通孔2aの位置のレジスト膜4も露光して
おいたので、この位置の遮光膜3aも遮光膜3bもエッチン
グにより除去されるから、導通ピン6による導通が取れ
なくなり、エッチングの終点を検出することが可能とな
る。
Then, the light-shielding film 3a is etched and patterned by using the resist film 4 patterned as shown in FIG. 2C as a mask, and then the resist film 4 is peeled off to obtain the reticle 1 as shown in FIG. Manufacturing. Since the resist film 4 at the position of the through hole 2a has also been exposed by the electron beam, the light-shielding film 3a and the light-shielding film 3b at this position are also removed by etching, so that conduction by the conduction pin 6 cannot be established, and the end point of etching. Can be detected.

【0017】このようにして導通ピン6と遮光膜3bとを
接触させて電子ビームにより露光を行っているので、確
実に導通を取ることが可能であり、また、遮光膜の表面
に形成したレジスト膜を剥離する必要がないので、一部
のレジストを剥がすために生じるレジスト膜と基板との
間の密着力の低下及びレジストの剥離カスに起因する表
面欠陥を防止することが可能となり、更に貫通孔2aの位
置のレジスト膜4も露光しておくとこの位置の遮光膜3a
も遮光膜3bがエッチングにより除去されるから、導通ピ
ン6による導通が取れなくなり、エッチングの終点を検
出することが可能となる。
Since the conductive pin 6 and the light-shielding film 3b are brought into contact with each other and the exposure is performed by the electron beam as described above, it is possible to surely establish the conduction and the resist formed on the surface of the light-shielding film. Since it is not necessary to peel off the film, it is possible to prevent a decrease in adhesion between the resist film and the substrate caused by peeling off a part of the resist, and to prevent surface defects due to resist peeling residue. If the resist film 4 at the position of the hole 2a is also exposed, the light shielding film 3a at this position is exposed.
Also, since the light-shielding film 3b is removed by etching, conduction by the conduction pin 6 cannot be obtained, and the end point of etching can be detected.

【0018】[0018]

【発明の効果】以上の説明から明らかなように、本発明
によれば極めて簡単な構造を改良した乾板を用い、改良
された方法により導通を取って電子ビームによりレジス
ト膜を露光するので、チャージアップを確実に防止して
遮光膜の露光を行うことが可能であり、また、一部のレ
ジスト膜を剥離して導通を取らないので剥離に起因する
表面欠陥を防止することが可能となる利点があり、著し
い経済的及び信頼性向上の効果が期待できるレチクル及
びその製造方法の提供が可能である。
As is apparent from the above description, according to the present invention, a dry plate having a remarkably simple structure is used, and the resist film is exposed by an electron beam by conducting electricity by the improved method. It is possible to reliably prevent the exposure and to expose the light-shielding film. Also, since a part of the resist film is not peeled to establish conduction, it is possible to prevent surface defects caused by peeling. Therefore, it is possible to provide a reticle and a method for manufacturing the reticle, which can be expected to have significant economic and reliability improvement effects.

【図面の簡単な説明】[Brief description of drawings]

【図1】 本発明による一実施例のレチクルを示す側断
面図、
FIG. 1 is a side sectional view showing a reticle according to an embodiment of the present invention,

【図2】 本発明による一実施例のレチクルの製造方法
を工程順に示す側断面図、
FIG. 2 is a side sectional view showing a method of manufacturing a reticle according to an embodiment of the present invention in the order of steps,

【図3】 従来のレチクルを示す側断面図、FIG. 3 is a side sectional view showing a conventional reticle,

【図4】 従来のレチクルの製造方法を工程順に示す側
断面図、
FIG. 4 is a side sectional view showing a conventional reticle manufacturing method in order of steps.

【符号の説明】[Explanation of symbols]

1はレチクル、 2は基板、 2aは貫通孔、 3aは遮光膜、 3bは遮光膜、 4はレジスト膜、 5は載物台、 6は導通ピン、 1 is a reticle, 2 is a substrate, 2a is a through hole, 3a is a light-shielding film, 3b is a light-shielding film, 4 is a resist film, 5 is a stage, 6 is a conductive pin,

Claims (2)

【特許請求の範囲】[Claims] 【請求項1】 周縁部に貫通孔(2a)を有する基板(2)
と、 該基板(2) の表面に形成されているパターニングされた
遮光膜(3a)と、 からなることを特徴とするレチクル。
1. A substrate (2) having a through hole (2a) in a peripheral portion thereof.
And a patterned light-shielding film (3a) formed on the surface of the substrate (2).
【請求項2】 請求項1記載のレチクルの製造方法であ
って、 周縁部に貫通孔(2a)を有する基板(2) の表面に遮光膜(3
a)が形成されており、前記貫通孔(2a)の側壁にも遮光膜
(3b)が形成されている乾板の前記遮光膜(3a)の表面にレ
ジスト膜(4) を形成する工程と、 前記貫通孔(2a)の側壁に形成されている遮光膜(3b)に導
通ピン(6) を接触させた状態で、前記レジスト膜(4) を
電子ビームを用いて露光する工程と、 を含むことを特徴とするレチクルの製造方法。
2. The method of manufacturing a reticle according to claim 1, wherein the light-shielding film (3) is formed on the surface of the substrate (2) having a through hole (2a) in the peripheral portion.
a) is formed, and a light-shielding film is also formed on the sidewall of the through hole (2a).
Conducting the step of forming a resist film (4) on the surface of the light shielding film (3a) of the dry plate on which (3b) is formed, and the light shielding film (3b) formed on the side wall of the through hole (2a). And a step of exposing the resist film (4) with an electron beam in a state where the pin (6) is in contact with the pin (6).
JP9520392A 1992-04-15 1992-04-15 Reticle and its production Withdrawn JPH05289309A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9520392A JPH05289309A (en) 1992-04-15 1992-04-15 Reticle and its production

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9520392A JPH05289309A (en) 1992-04-15 1992-04-15 Reticle and its production

Publications (1)

Publication Number Publication Date
JPH05289309A true JPH05289309A (en) 1993-11-05

Family

ID=14131196

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9520392A Withdrawn JPH05289309A (en) 1992-04-15 1992-04-15 Reticle and its production

Country Status (1)

Country Link
JP (1) JPH05289309A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6986850B2 (en) * 2003-07-07 2006-01-17 Micron Technology, Inc. Partial edge bead removal to allow improved grounding during e-beam mask writing
CN108022838A (en) * 2016-10-31 2018-05-11 株式会社日立高新技术 Plasma-etching method

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6986850B2 (en) * 2003-07-07 2006-01-17 Micron Technology, Inc. Partial edge bead removal to allow improved grounding during e-beam mask writing
US7338609B2 (en) 2003-07-07 2008-03-04 Micron Technology, Inc. Partial edge bead removal to allow improved grounding during e-beam mask writing
CN108022838A (en) * 2016-10-31 2018-05-11 株式会社日立高新技术 Plasma-etching method
CN108022838B (en) * 2016-10-31 2022-01-18 株式会社日立高新技术 Plasma etching method

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