JPH0528904B2 - - Google Patents
Info
- Publication number
- JPH0528904B2 JPH0528904B2 JP17450486A JP17450486A JPH0528904B2 JP H0528904 B2 JPH0528904 B2 JP H0528904B2 JP 17450486 A JP17450486 A JP 17450486A JP 17450486 A JP17450486 A JP 17450486A JP H0528904 B2 JPH0528904 B2 JP H0528904B2
- Authority
- JP
- Japan
- Prior art keywords
- epitaxial growth
- pattern
- silicon wafer
- distance
- pattern shift
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 19
- 229910052710 silicon Inorganic materials 0.000 claims description 19
- 239000010703 silicon Substances 0.000 claims description 19
- 238000000034 method Methods 0.000 description 19
- 238000005259 measurement Methods 0.000 description 9
- 239000010453 quartz Substances 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 238000005498 polishing Methods 0.000 description 5
- 238000005530 etching Methods 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000004040 coloring Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Landscapes
- Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP17450486A JPS6329943A (ja) | 1986-07-23 | 1986-07-23 | パタ−ンシフト量の測定方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP17450486A JPS6329943A (ja) | 1986-07-23 | 1986-07-23 | パタ−ンシフト量の測定方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS6329943A JPS6329943A (ja) | 1988-02-08 |
JPH0528904B2 true JPH0528904B2 (de) | 1993-04-27 |
Family
ID=15979657
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP17450486A Granted JPS6329943A (ja) | 1986-07-23 | 1986-07-23 | パタ−ンシフト量の測定方法 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6329943A (de) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06103715B2 (ja) * | 1990-11-30 | 1994-12-14 | 信越半導体株式会社 | パターンシフト測定方法 |
JP3039210B2 (ja) * | 1993-08-03 | 2000-05-08 | 日本電気株式会社 | 半導体装置の製造方法 |
CN107204283B (zh) * | 2016-03-18 | 2020-02-21 | 万国半导体股份有限公司 | 一种监控外延层几何形状发生漂移的方法 |
-
1986
- 1986-07-23 JP JP17450486A patent/JPS6329943A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS6329943A (ja) | 1988-02-08 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPH0321901B2 (de) | ||
JPH0528904B2 (de) | ||
JP2694115B2 (ja) | 較正/測定用基準構造体、その形成方法及びこれを用いた測定方法 | |
US5172188A (en) | Pattern shift measuring method | |
JPH0724278B2 (ja) | パターンシフト測定方法 | |
US6623993B2 (en) | Method of determining the time for polishing the surface of an integrated circuit wafer | |
JP2660405B2 (ja) | マスクアライメント方法 | |
JPS60160124A (ja) | 半導体装置の製造方法 | |
JPH02206146A (ja) | 半導体装置の膜厚測定方法 | |
JP3024617B2 (ja) | 位置歪み及び応力の測定方法とx線マスク | |
JPS60167426A (ja) | 半導体結晶ウエハ− | |
JPS61251123A (ja) | 半導体装置の製造方法 | |
JPH07111340B2 (ja) | パターンシフト測定方法 | |
JPH081885B2 (ja) | エピタキシャル成長時のパタ−ンシフトの測定方法 | |
JPS6063921A (ja) | 半導体素子の製造方法 | |
JPS63265422A (ja) | エピタキシヤル成長層の測定方法 | |
JPS61251124A (ja) | 半導体装置の製造方法 | |
JPS61270819A (ja) | 半導体装置の製法 | |
JPS60145652A (ja) | 半導体装置の製造方法 | |
JPS6142152A (ja) | 半導体ウエハ−の合わせマ−ク | |
JPS63301541A (ja) | パタ−ンシフト測定方法 | |
JPS61181123A (ja) | 半導体装置のパタ−ン位置合せ方法 | |
JPS6177337A (ja) | 絶縁物分離基板の製造方法 | |
JPS61152008A (ja) | ウエハ | |
JPS6235642A (ja) | 半導体素子の製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
LAPS | Cancellation because of no payment of annual fees |