JPH0526324B2 - - Google Patents

Info

Publication number
JPH0526324B2
JPH0526324B2 JP57092612A JP9261282A JPH0526324B2 JP H0526324 B2 JPH0526324 B2 JP H0526324B2 JP 57092612 A JP57092612 A JP 57092612A JP 9261282 A JP9261282 A JP 9261282A JP H0526324 B2 JPH0526324 B2 JP H0526324B2
Authority
JP
Japan
Prior art keywords
container
silane
reactive gas
filling
purification
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP57092612A
Other languages
English (en)
Japanese (ja)
Other versions
JPS58209114A (ja
Inventor
Shunpei Yamazaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP57092612A priority Critical patent/JPS58209114A/ja
Publication of JPS58209114A publication Critical patent/JPS58209114A/ja
Publication of JPH0526324B2 publication Critical patent/JPH0526324B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Light Receiving Elements (AREA)
  • Photovoltaic Devices (AREA)
JP57092612A 1982-05-31 1982-05-31 反応性気体充填方法 Granted JPS58209114A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57092612A JPS58209114A (ja) 1982-05-31 1982-05-31 反応性気体充填方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57092612A JPS58209114A (ja) 1982-05-31 1982-05-31 反応性気体充填方法

Related Child Applications (3)

Application Number Title Priority Date Filing Date
JP108584A Division JPS59144899A (ja) 1984-01-07 1984-01-07 反応性気体充填方法
JP3163869A Division JP2654466B2 (ja) 1991-06-07 1991-06-07 反応性気体充填方法
JP3163868A Division JP2532313B2 (ja) 1991-06-07 1991-06-07 高圧容器

Publications (2)

Publication Number Publication Date
JPS58209114A JPS58209114A (ja) 1983-12-06
JPH0526324B2 true JPH0526324B2 (enrdf_load_stackoverflow) 1993-04-15

Family

ID=14059253

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57092612A Granted JPS58209114A (ja) 1982-05-31 1982-05-31 反応性気体充填方法

Country Status (1)

Country Link
JP (1) JPS58209114A (enrdf_load_stackoverflow)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0760902B2 (ja) * 1985-06-03 1995-06-28 株式会社半導体エネルギー研究所 半導体装置作製方法
JP2660243B2 (ja) * 1985-08-08 1997-10-08 株式会社半導体エネルギー研究所 半導体装置作製方法
JPS6247116A (ja) * 1985-08-26 1987-02-28 Semiconductor Energy Lab Co Ltd 半導体装置製造装置
JPS6251210A (ja) * 1985-08-30 1987-03-05 Semiconductor Energy Lab Co Ltd 半導体装置作製方法
JPS6252924A (ja) * 1985-09-01 1987-03-07 Semiconductor Energy Lab Co Ltd 半導体装置作製方法
JPS6269608A (ja) * 1985-09-24 1987-03-30 Semiconductor Energy Lab Co Ltd 半導体装置作製方法

Also Published As

Publication number Publication date
JPS58209114A (ja) 1983-12-06

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