JPH0525837B2 - - Google Patents
Info
- Publication number
- JPH0525837B2 JPH0525837B2 JP12377589A JP12377589A JPH0525837B2 JP H0525837 B2 JPH0525837 B2 JP H0525837B2 JP 12377589 A JP12377589 A JP 12377589A JP 12377589 A JP12377589 A JP 12377589A JP H0525837 B2 JPH0525837 B2 JP H0525837B2
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- plasma
- diamond
- gas
- chamber
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000000758 substrate Substances 0.000 claims description 51
- 239000010432 diamond Substances 0.000 claims description 31
- 229910003460 diamond Inorganic materials 0.000 claims description 23
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 6
- 229910052799 carbon Inorganic materials 0.000 claims description 3
- 238000009832 plasma treatment Methods 0.000 claims description 2
- 239000007789 gas Substances 0.000 description 27
- 239000010408 film Substances 0.000 description 18
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 12
- 230000015572 biosynthetic process Effects 0.000 description 10
- 238000006243 chemical reaction Methods 0.000 description 9
- 238000005229 chemical vapour deposition Methods 0.000 description 8
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 7
- 239000012495 reaction gas Substances 0.000 description 7
- 230000000694 effects Effects 0.000 description 6
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 5
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 description 5
- 229910002091 carbon monoxide Inorganic materials 0.000 description 5
- 150000002500 ions Chemical class 0.000 description 5
- 238000002360 preparation method Methods 0.000 description 5
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 4
- 230000007423 decrease Effects 0.000 description 4
- 229910002804 graphite Inorganic materials 0.000 description 4
- 239000010439 graphite Substances 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 238000003786 synthesis reaction Methods 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 229910003481 amorphous carbon Inorganic materials 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000010849 ion bombardment Methods 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 239000001569 carbon dioxide Substances 0.000 description 2
- 229910002092 carbon dioxide Inorganic materials 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000004907 flux Effects 0.000 description 2
- 238000004050 hot filament vapor deposition Methods 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000000376 reactant Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 230000002194 synthesizing effect Effects 0.000 description 2
- 239000006061 abrasive grain Substances 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 229910002090 carbon oxide Inorganic materials 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000007667 floating Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12377589A JPH02302396A (ja) | 1989-05-16 | 1989-05-16 | プラズマ処理装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12377589A JPH02302396A (ja) | 1989-05-16 | 1989-05-16 | プラズマ処理装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH02302396A JPH02302396A (ja) | 1990-12-14 |
| JPH0525837B2 true JPH0525837B2 (enrdf_load_stackoverflow) | 1993-04-14 |
Family
ID=14868976
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12377589A Granted JPH02302396A (ja) | 1989-05-16 | 1989-05-16 | プラズマ処理装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH02302396A (enrdf_load_stackoverflow) |
-
1989
- 1989-05-16 JP JP12377589A patent/JPH02302396A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPH02302396A (ja) | 1990-12-14 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |