JPH0525192B2 - - Google Patents

Info

Publication number
JPH0525192B2
JPH0525192B2 JP60167813A JP16781385A JPH0525192B2 JP H0525192 B2 JPH0525192 B2 JP H0525192B2 JP 60167813 A JP60167813 A JP 60167813A JP 16781385 A JP16781385 A JP 16781385A JP H0525192 B2 JPH0525192 B2 JP H0525192B2
Authority
JP
Japan
Prior art keywords
waveguide region
mode
semiconductor laser
array
gain
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP60167813A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6230391A (ja
Inventor
Jun Oosawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP16781385A priority Critical patent/JPS6230391A/ja
Publication of JPS6230391A publication Critical patent/JPS6230391A/ja
Publication of JPH0525192B2 publication Critical patent/JPH0525192B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/40Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031Edge-emitting structures

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
JP16781385A 1985-07-31 1985-07-31 集積型半導体レ−ザ Granted JPS6230391A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16781385A JPS6230391A (ja) 1985-07-31 1985-07-31 集積型半導体レ−ザ

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16781385A JPS6230391A (ja) 1985-07-31 1985-07-31 集積型半導体レ−ザ

Publications (2)

Publication Number Publication Date
JPS6230391A JPS6230391A (ja) 1987-02-09
JPH0525192B2 true JPH0525192B2 (enrdf_load_stackoverflow) 1993-04-12

Family

ID=15856579

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16781385A Granted JPS6230391A (ja) 1985-07-31 1985-07-31 集積型半導体レ−ザ

Country Status (1)

Country Link
JP (1) JPS6230391A (enrdf_load_stackoverflow)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3678075B2 (ja) 1998-12-09 2005-08-03 セイコーエプソン株式会社 電源装置およびその制御方法、携帯型電子機器、計時装置およびその制御方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61113294A (ja) * 1984-11-07 1986-05-31 Sharp Corp 半導体レ−ザアレイ装置

Also Published As

Publication number Publication date
JPS6230391A (ja) 1987-02-09

Similar Documents

Publication Publication Date Title
US6075801A (en) Semiconductor laser with wide side of tapered light gain region
JPS6079786A (ja) 双安定レ−ザ
JP2539368B2 (ja) 半導体レ−ザ装置
JP2950302B2 (ja) 半導体レーザ
JPS58196088A (ja) 半導体レ−ザ素子
JPS63116489A (ja) 光集積回路
US4771433A (en) Semiconductor laser device
JPH0525192B2 (enrdf_load_stackoverflow)
JPH029468B2 (enrdf_load_stackoverflow)
JPS6159555B2 (enrdf_load_stackoverflow)
JPS6243355B2 (enrdf_load_stackoverflow)
JPH10107373A (ja) 半導体レーザ
JPS59200484A (ja) 半導体レ−ザ
JPH01238082A (ja) 半導体レーザ
JPH07325328A (ja) 半導体光変調器
CN116759891A (zh) 同相超模激光器
JPS58199586A (ja) 半導体レ−ザ
JPH0724319B2 (ja) 光集積装置及びその製造方法
JPS6130090A (ja) 半導体レ−ザ
JPH0824207B2 (ja) 半導体レ−ザ装置
JPS6332979A (ja) 半導体レ−ザ
JPS6123382A (ja) 多重波長半導体レ−ザ
JPS61141192A (ja) 半導体レ−ザ装置
JPH0738485B2 (ja) 光集積回路
JPH0821749B2 (ja) 集積型半導体レ−ザ

Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term