JPH0525189B2 - - Google Patents
Info
- Publication number
- JPH0525189B2 JPH0525189B2 JP22972785A JP22972785A JPH0525189B2 JP H0525189 B2 JPH0525189 B2 JP H0525189B2 JP 22972785 A JP22972785 A JP 22972785A JP 22972785 A JP22972785 A JP 22972785A JP H0525189 B2 JPH0525189 B2 JP H0525189B2
- Authority
- JP
- Japan
- Prior art keywords
- light emitting
- emitting diode
- type
- light
- mesa
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 20
- 239000000758 substrate Substances 0.000 claims description 12
- 239000013078 crystal Substances 0.000 claims description 9
- 238000005530 etching Methods 0.000 description 9
- 239000002184 metal Substances 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000005360 phosphosilicate glass Substances 0.000 description 6
- 230000006798 recombination Effects 0.000 description 6
- 238000005215 recombination Methods 0.000 description 6
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 238000000605 extraction Methods 0.000 description 4
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 239000011701 zinc Substances 0.000 description 2
- 229910000927 Ge alloy Inorganic materials 0.000 description 1
- BYDQGSVXQDOSJJ-UHFFFAOYSA-N [Ge].[Au] Chemical compound [Ge].[Au] BYDQGSVXQDOSJJ-UHFFFAOYSA-N 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- SAOPTAQUONRHEV-UHFFFAOYSA-N gold zinc Chemical compound [Zn].[Au] SAOPTAQUONRHEV-UHFFFAOYSA-N 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
Landscapes
- Led Device Packages (AREA)
- Led Devices (AREA)
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60229727A JPS6288375A (ja) | 1985-10-15 | 1985-10-15 | モノリシツク発光ダイオ−ドアレイ |
| DE3541790A DE3541790C2 (de) | 1984-11-26 | 1985-11-26 | Lichtemittierende lineare Festkörper-Diodenanordnung |
| US07/178,648 US4984035A (en) | 1984-11-26 | 1988-04-07 | Monolithic light emitting diode array |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60229727A JPS6288375A (ja) | 1985-10-15 | 1985-10-15 | モノリシツク発光ダイオ−ドアレイ |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6288375A JPS6288375A (ja) | 1987-04-22 |
| JPH0525189B2 true JPH0525189B2 (enrdf_load_stackoverflow) | 1993-04-12 |
Family
ID=16896747
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60229727A Granted JPS6288375A (ja) | 1984-11-26 | 1985-10-15 | モノリシツク発光ダイオ−ドアレイ |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6288375A (enrdf_load_stackoverflow) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01140115U (enrdf_load_stackoverflow) * | 1988-03-17 | 1989-09-26 |
-
1985
- 1985-10-15 JP JP60229727A patent/JPS6288375A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6288375A (ja) | 1987-04-22 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP3207773B2 (ja) | 化合物半導体発光素子及びその製造方法 | |
| US6222208B1 (en) | Light-emitting diode and light-emitting diode array | |
| JP2000323750A (ja) | 発光ダイオードアレイ | |
| JPH0525189B2 (enrdf_load_stackoverflow) | ||
| JPH0363830B2 (enrdf_load_stackoverflow) | ||
| JPH0525188B2 (enrdf_load_stackoverflow) | ||
| US20040113225A1 (en) | Semiconductor epitaxial structure and semiconductor light-emitting device | |
| JP3633018B2 (ja) | 半導体発光装置 | |
| JP3311946B2 (ja) | 発光ダイオードアレイ | |
| KR910006707B1 (ko) | 발광다이오드 및 제조방법 | |
| JPH07254731A (ja) | 発光素子 | |
| JPH03190287A (ja) | 発光ダイオードアレイ | |
| JP2948967B2 (ja) | 半導体発光素子 | |
| JPS5826676B2 (ja) | 発光ダイオ−ド | |
| JP3638413B2 (ja) | 半導体発光装置とその製造方法 | |
| JP2661009B2 (ja) | 窒化ガリウム系化合物半導体発光素子 | |
| JP3488783B2 (ja) | 発光ダイオードアレイ | |
| JP3464124B2 (ja) | 発光ダイオードアレイ | |
| GB1258360A (enrdf_load_stackoverflow) | ||
| JP3420417B2 (ja) | 発光ダイオードアレイ | |
| JPH06169104A (ja) | 半導体発光装置及びその製造方法 | |
| JPH0330311B2 (enrdf_load_stackoverflow) | ||
| JP3261032B2 (ja) | 発光ダイオードアレイ | |
| JPS6048915B2 (ja) | 注入型発光半導体装置およびその製造方法 | |
| JPH09174921A (ja) | 発光ダイオードアレイ |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |