JPH05251207A - Manufacturing method of ptc ceramics - Google Patents

Manufacturing method of ptc ceramics

Info

Publication number
JPH05251207A
JPH05251207A JP4084834A JP8483492A JPH05251207A JP H05251207 A JPH05251207 A JP H05251207A JP 4084834 A JP4084834 A JP 4084834A JP 8483492 A JP8483492 A JP 8483492A JP H05251207 A JPH05251207 A JP H05251207A
Authority
JP
Japan
Prior art keywords
ptc ceramics
ptc
material powder
dopant
electric resistivity
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4084834A
Other languages
Japanese (ja)
Inventor
Kazuhiko Hattori
和彦 服部
Toyoichi Kurushima
豊一 久留島
Kozo Ishizaki
幸三 石▲崎▼
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Inax Corp
Original Assignee
Inax Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Inax Corp filed Critical Inax Corp
Priority to JP4084834A priority Critical patent/JPH05251207A/en
Publication of JPH05251207A publication Critical patent/JPH05251207A/en
Pending legal-status Critical Current

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  • Thermistors And Varistors (AREA)
  • Compositions Of Oxide Ceramics (AREA)

Abstract

PURPOSE:To decrease the electric resistivity in low temperature region by a method wherein PTC ceramics material powder containing exceeding specific amount of dopant containing penta doping element is baked in reducing atmosphere. CONSTITUTION:Exceeding 0.5% of penta doping element such as Nb, etc., as a dopant is contained in PTC ceramics material powder mainly composed of barium titanate, etc. Next, said material powder containing this dopant is baked in reducing atmosphere. At this time, the sintering step can be satisfactorily advanced resultantly decreasing the electric resistivity. Through these procedures, the electric resistivity in the low temperature region as well as the power consumption of the PTC ceramics can be decreased as little as possible.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】この発明はPTCセラミックスの
製造方法に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for producing PTC ceramics.

【0002】[0002]

【発明の背景】一般に半導体は温度が上昇するにつれて
電気抵抗が減少する傾向を示すが、半導体化したBaT
iO3焼結体は低温側では低い電気抵抗を示し、ある温
度を境として、即ち結晶転移するキュリー温度を境とし
て急激に電気抵抗が増大する性質を示す。そしてこのP
TC効果によって消磁素子,ヒータ素子等として各種分
野で広く用いられている。
BACKGROUND OF THE INVENTION Generally, semiconductors tend to decrease in electric resistance as temperature rises.
The io 3 sintered body exhibits a low electric resistance on the low temperature side, and has a property of rapidly increasing the electric resistance at a certain temperature, that is, at the Curie temperature at which the crystal transition occurs. And this P
It is widely used in various fields as a demagnetizing element, a heater element, etc. due to the TC effect.

【0003】BaTiO3セラミックスにおけるこのよ
うなPTC特性は、チタン酸バリウムにLa(3価)等
微量のドープ元素を固溶させたときに発生する動き易い
電子が、低温(相転移温度より低い温度)では焼結体全
体の中を動き回ることができるが、相転移温度より高い
温度では焼結体中の粒界を超えて動くことが困難になる
ことによるものと考えられている。
Such PTC characteristics in BaTiO 3 ceramics are due to the fact that easily moving electrons generated when a small amount of doping element such as La (trivalent) is dissolved in barium titanate at low temperature (temperature lower than the phase transition temperature). However, it is thought that it is difficult to move beyond the grain boundaries in the sintered body at a temperature higher than the phase transition temperature.

【0004】ところでこのBaTiO3で代表されるP
TCセラミックスは、そのPTC特性に基づいて保護回
路部品としても用いられている。
By the way, P represented by BaTiO 3
TC ceramics are also used as protective circuit components based on their PTC characteristics.

【0005】PTCセラミックスを回路に直列に接続し
ておくと、回路に過電流が流れた時、PTCセラミック
スの発熱・温度上昇に基づく高抵抗化によって回路の電
流が遮断され、回路が保護されるのである。
When the PTC ceramics are connected in series to the circuit, when an overcurrent flows in the circuit, the resistance of the PTC ceramics is increased due to heat generation and temperature rise, so that the circuit current is cut off and the circuit is protected. Of.

【0006】而してPTCセラミックスをこのような保
護回路部品として用いるとき、室温、厳密には相転移温
度よりも低温領域における電気抵抗率は小さい方が望ま
しい。室温における電気抵抗率が高いとそれだけ電力を
多く消費してしまうからである。
When using PTC ceramics as such a protective circuit component, it is desirable that the electrical resistivity is smaller at room temperature, strictly speaking, at a temperature lower than the phase transition temperature. This is because the higher the electrical resistivity at room temperature, the more power is consumed.

【0007】PTCセラミックスの低温領域における電
気抵抗率を小さくする方法として、その原料中にドープ
剤を多く含有させるといったことが考えられるが、従来
ドープ剤として含有させ得る量はせいぜい0.5モル%
までとされており、これ以上含有させると焼結が良好に
行われなくなり、得られる焼成品は嵩密度の低い、ポー
ラスなものとなってしまって、PTC特性を有しないも
のとなる。
As a method for reducing the electrical resistivity of PTC ceramics in the low temperature region, it is conceivable to add a large amount of a doping agent to the raw material, but the amount that can be contained as a conventional doping agent is 0.5 mol% at most.
However, if the content exceeds this range, the sintering will not be performed well, and the obtained fired product will have a low bulk density and become porous, and will not have PTC characteristics.

【0008】[0008]

【課題を解決するための手段】本発明はこのような事情
を背景としてなされたもので、その要旨は、PTCセラ
ミックス原料粉末中に5価のドープ元素を含むドープ剤
をモル基準で0.5%以上含有させ、該ドープ剤を含有
する原料粉末を還元雰囲気中で焼成することにある。
The present invention has been made in view of such circumstances, and the gist thereof is that a PTC ceramic raw material powder contains a doping agent containing a pentavalent doping element in a molar amount of 0.5. % Or more, and the raw material powder containing the doping agent is fired in a reducing atmosphere.

【0009】[0009]

【作用及び発明の効果】本発明者は、上記事情を背景と
して従来よりも多量にドープ剤を含有させるべく各種条
件でPTCセラミックスの焼成実験を行ったところ、そ
の過程で5価のドープ元素の場合、これを0.5モル%
以上含有させた場合においても、焼成を還元雰囲気中で
行うならば焼結が良好に進行し、またこれに伴って電気
抵抗率も低下するという知見を得た。本発明はこのよう
な知見の下に成されたものである。
In view of the above circumstances, the present inventor conducted a firing test of PTC ceramics under various conditions so as to contain a larger amount of the doping agent than before, and in the process, the pentavalent doping element was added. If this is 0.5 mol%
It has been found that, even when the above content is included, if the firing is performed in a reducing atmosphere, the sintering proceeds well and the electrical resistivity also decreases accordingly. The present invention was made based on such knowledge.

【0010】而してこのように還元焼成したPTC焼結
品を続いて酸化焼成することによって、望ましいPTC
特性を付与することができる。
The PTC sintered product thus reduced and fired is then subjected to oxidative firing to obtain a desired PTC.
Properties can be imparted.

【0011】本発明によって得られるPTCセラミック
スは低温領域における電気抵抗が小さいため、上記保護
回路部品として用いた場合において電力消費を可及的に
少なくすることができる。
Since the PTC ceramics obtained by the present invention have a low electric resistance in a low temperature region, power consumption can be reduced as much as possible when used as the protection circuit component.

【0012】[0012]

【実施例】次に本発明の特徴を更に明確にすべく、以下
にその実施例を詳述する。モル基準(%)でBaC
3:100,TiO2:100.5,SiO2:0.3
から成るチタン酸バリウムセラミックス原料粉末中に、
ドープ剤としてNb23を0.2,0.5,2.5,
5.0の各量で含有させたもの、及び比較のためにLa
23を0.2,2.5,5.0含有させたものをそれぞ
れH2:8%,N2:92%の還元雰囲気中,1400℃
で4時間焼成した。また併せて空気中1350〜138
0℃×1時間の条件で焼成実験を行った。
EXAMPLES In order to further clarify the characteristics of the present invention, examples thereof will be described in detail below. BaC on a molar basis (%)
o 3: 100, TiO 2: 100.5, SiO 2: 0.3
In barium titanate ceramic raw material powder consisting of,
Nb 2 O 3 as a doping agent is 0.2, 0.5, 2.5,
Those contained in each amount of 5.0 and La for comparison
A mixture containing 0.2, 2.5 and 5.0 of 2 O 3 in a reducing atmosphere of H 2 : 8% and N 2 : 92% at 1400 ° C.
It was baked for 4 hours. In addition, 1350 to 138 in the air
A firing experiment was performed under the condition of 0 ° C. × 1 hour.

【0013】得られた焼成品の嵩密度及び電気抵抗率を
測定したところ図1及び図2の如くであった。。
The bulk density and the electrical resistivity of the obtained fired product were measured and found to be as shown in FIGS. .

【0014】この結果から分かるようにドープ元素とし
て3価のLaを用いた場合、ドープ剤の量が0.2%よ
り多いものについては酸化焼成,還元焼成いずれにおい
ても嵩密度が著しく低く、良好に焼結しなかった。
As can be seen from these results, when trivalent La is used as the doping element, the bulk density is extremely low in both the oxidation firing and the reduction firing when the amount of the doping agent is more than 0.2%, which is good. Did not sinter.

【0015】一方ドープ元素として5価のNbを用いた
ものについては、ドープ剤の量が0.2%を超えても焼
結は進行している。
On the other hand, in the case where pentavalent Nb is used as the doping element, sintering proceeds even if the amount of the doping agent exceeds 0.2%.

【0016】しかしながら図2の結果から分かるよう
に、ドープ剤が0.2%を超えたものについては、これ
を酸化焼成すると電気抵抗率が絶縁体に近い程に著しく
高くなってしまう。
However, as can be seen from the results shown in FIG. 2, when the doping agent exceeds 0.2%, the electrical resistivity becomes remarkably high as it becomes closer to an insulator when it is oxidized and fired.

【0017】これに対して還元焼成したものについて
は、ドープ剤の量が0.2%を超えても電気抵抗率は増
大せず、却ってドープ剤の添加量に応じて低下してい
る。
On the other hand, in the case of reduction firing, the electrical resistivity does not increase even if the amount of the dopant exceeds 0.2%, but rather decreases depending on the amount of the dopant added.

【0018】而してこのようにNbドープ剤を添加して
還元焼成したものは、そのままではPTC特性を示さな
いが、これを酸化焼成したところ図3に示しているよう
に良好なPTC特性を示した。
Thus, the product obtained by reducing and firing the Nb dopant in this way does not show the PTC characteristic as it is, but when it is oxidatively fired, it shows a good PTC characteristic as shown in FIG. Indicated.

【0019】尚図3はドープ剤としてNb23を5mo
l%添加したものの結果である。
In FIG. 3, Nb 2 O 3 as a doping agent is added at 5 mo.
The results are obtained by adding 1%.

【0020】以上本発明の実施例を詳述したがこれはあ
くまで一例示であり、本発明は例えばチタン酸バリウム
以外のPTCセラミックスに適用することも可能である
など、その主旨を逸脱しない範囲において、当業者の知
識に基づき様々な変更を加えた態様で実施可能である。
The embodiment of the present invention has been described in detail above, but this is merely an example, and the present invention can be applied to PTC ceramics other than barium titanate, for example, within the scope of the invention. It can be implemented with various modifications based on the knowledge of those skilled in the art.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明の実施例において得られたドープ剤の量
と嵩密度との関係を示す図である。
FIG. 1 is a diagram showing the relationship between the amount of a doping agent and the bulk density obtained in an example of the present invention.

【図2】同実施例において得られたドープ剤の量と電気
抵抗率との関係を示す図である。
FIG. 2 is a diagram showing the relationship between the amount of the dopant and the electrical resistivity obtained in the same example.

【図3】同実施例において得られた温度と電気抵抗率と
の関係を示す図である。
FIG. 3 is a diagram showing a relationship between temperature and electric resistivity obtained in the same example.

フロントページの続き (72)発明者 石▲崎▼ 幸三 新潟県長岡市深沢町1769番地1Continuation of the front page (72) Inventor Ishi ▲ Saki ▼ Kozo 1769-1 Fukasawa-cho, Nagaoka-shi, Niigata

Claims (1)

【特許請求の範囲】[Claims] 【請求項1】 PTCセラミックス原料粉末中に5価の
ドープ元素を含むドープ剤をモル基準で0.5%以上含
有させ、該ドープ剤を含有する原料粉末を還元雰囲気中
で焼成することを特徴とするPTCセラミックスの製造
方法。
1. A PTC ceramic raw material powder containing 0.5% or more of a doping agent containing a pentavalent doping element on a molar basis, and firing the raw material powder containing the doping agent in a reducing atmosphere. And a method for manufacturing PTC ceramics.
JP4084834A 1992-03-07 1992-03-07 Manufacturing method of ptc ceramics Pending JPH05251207A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4084834A JPH05251207A (en) 1992-03-07 1992-03-07 Manufacturing method of ptc ceramics

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4084834A JPH05251207A (en) 1992-03-07 1992-03-07 Manufacturing method of ptc ceramics

Publications (1)

Publication Number Publication Date
JPH05251207A true JPH05251207A (en) 1993-09-28

Family

ID=13841818

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4084834A Pending JPH05251207A (en) 1992-03-07 1992-03-07 Manufacturing method of ptc ceramics

Country Status (1)

Country Link
JP (1) JPH05251207A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6984355B2 (en) * 1999-11-02 2006-01-10 Murata Manufacturing Co., Ltd. Semiconducting ceramic material, process for producing the ceramic material, and thermistor

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6984355B2 (en) * 1999-11-02 2006-01-10 Murata Manufacturing Co., Ltd. Semiconducting ceramic material, process for producing the ceramic material, and thermistor

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