JP2725406B2 - Voltage-dependent nonlinear resistor element and method of manufacturing the same - Google Patents

Description

The present invention relates to an electronic device, an abnormal voltage generated in an electric device,
The present invention relates to a voltage-dependent nonlinear resistor element mainly composed of SrTiO ₃ for protecting a semiconductor and a circuit from noise, pulse and static electricity, and a method for manufacturing the same.

2. Description of the Related Art Conventionally, abnormal voltage generated in various electronic devices and electric devices,
SiC varistors and ZnO varistors with varistor characteristics have been used to remove noise, pulses and static electricity. The voltage-current characteristics of such a varistor can be approximately expressed by the following equation.

I = (V / C) ^α where I is current, V is voltage, C is a varistor-specific constant, and α is a voltage non-linear index. The voltage non-linear index α of the SiC varistor is about 2 to 7;
There are as many as 50. Such a varistor has excellent performance in absorbing relatively high voltage, but has a low dielectric constant, a small inherent capacitance, and a slow response, so that a low voltage or a frequency lower than the varistor voltage is used. But has little effect on absorption. Further, the dielectric loss tan δ is as large as 5 to 10%.

On the other hand, a semiconductor capacitor having an apparent dielectric constant 除去 of about 5 × 10 ⁴ and a dielectric loss tan δ of about 1% is used for removing low-voltage noise and the like. However, such a semiconductor capacitor is destroyed when a voltage or current exceeding a certain level is applied due to a surge or the like, and the semiconductor capacitor does not function as a capacitor. Therefore, in recent years, a material having SrTiO ₃ as a main component and having both functions of a varistor characteristic and a capacitor characteristic has been developed.

Problems to be Solved by the Invention A capacitive varistor containing SrTiO ₃ as a main component shows a negative temperature coefficient of the varistor voltage. Heat is generated and the varistor voltage is reduced, which may cause a short circuit in a severe case. In addition, when used at high temperatures or for a long time, the varistor voltage is expected to decrease, so that the effective voltage limit increases and a large load is imposed on various electronic and electrical devices. Have. Therefore, in the capacitive varistor containing SrTiO ₃ as a main component, the temperature coefficient of the varistor voltage needs to show a positive or zero value in order to suppress a decrease in the varistor voltage during high temperature or long-time use.

The present invention has been made in view of such a point, Sr
It is an object of the present invention to provide a voltage-dependent nonlinear resistor element containing TiO ₃ as a main component and a method for manufacturing the same.

Means for Solving the Problems In order to solve the above-mentioned problems, the present invention provides a semiconductor having a perovskite structure mainly composed of Sr and Ti atoms converted into a semiconductor by valence control, Na ₂ SiO ₃ to 0.2 to
An object of the present invention is to provide a voltage-dependent nonlinear resistor element containing 5.0 mol%. Further, using SrTiO ₃ powder as a raw material, N
b, Ta and other valence controlling agents are added in an appropriate amount, and Na ₂ SiO ₃
Was mixed and molded in a reducing atmosphere or a nitrogen atmosphere in a temperature range of 1200 to 1500 ° C., and then heat-treated in air at a temperature range of 900 to 1200 ° C. An object of the present invention is to provide a method for manufacturing a voltage-dependent nonlinear resistor element provided with electrodes by various methods later.

Action Generally, an appropriate amount of a valence controlling agent containing atoms such as Nb and Ta is added to SrTiO ₃ , and the element fired in a reducing atmosphere or a nitrogen atmosphere is subjected to a heat treatment in air, and then a capacitor formed by providing an electrode is formed. In the varistor, the degree of re-oxidation differs between the surface and the inside of the element and becomes non-uniform. As a result, the surface has an oxygen concentration gradient such that the oxygen concentration is high on the surface and low on the inside. The electron conduction mechanism of such a capacitive varistor is considered to be due to an asymmetric energy barrier caused by an oxygen concentration gradient. Therefore, when a capacitive varistor with such an electron conduction mechanism is used at high temperatures or for a long time, electrons are excited by thermal energy, and it is possible to easily overcome an energy barrier that was difficult to overcome at room temperature. As a result, the varistor voltage decreases. Further, in a capacitive varistor having such an asymmetric energy barrier, the varistor voltage is likely to be directional (polarized). Therefore, the following two methods can be considered as a method of eliminating the asymmetric energy barrier, that is, a method of suppressing the oxygen concentration gradient of the completed device. First, as a first method, when Na ₂ SiO ₃ is added and sintering is performed in a reducing atmosphere or a nitrogen atmosphere, Na atoms form a solid solution in the SrTiO ₃ crystal, and a stateally unstable lattice strain is generated.
When such a device is subjected to a heat treatment in air, it proceeds in a direction in which the lattice distortion is stable in a state, that is, in a direction in which the device is easily oxidized. It is considered that the concentration gradient is suppressed. As a second method, the heat treatment temperature in air is 900
If performed at a temperature of not less than ° C., it is considered that reoxidation is uniformly performed inside the element as in the first method, and the oxygen concentration gradient is suppressed. Therefore, in the capacitive varistor obtained by such a composition or manufacturing method, there is almost no oxygen concentration gradient, so that the varistor voltage can be suppressed even at a high temperature or for a long time. At this time, as in the present invention, Na ₂ SiO
The addition amount of ( ₃ ) was specified in the range of 0.2 to 5.0 mol% because 0.2 m
If it is less than ol%, the effect of addition cannot be obtained, and if it exceeds 5.0 mol%, the sinterability and reliability are reduced, and the function as a capacitive varistor is not achieved. The preferred range is 0.5 to 2.0 mol% in consideration of sinterability and reliability.

Therefore, a capacitive varistor having a perovskite structure mainly composed of Sr and Ti atoms converted into a semiconductor by valence control and an oxidation having a perovskite structure mainly composed of Sr and Ti atoms converted to a semiconductor by controlling valence. Things, Na
Capacitive varistors containing ₂ SiO ₃ have significantly different microstructures and electrical characteristics, and are considered to be completely different compositions.

Examples Hereinafter, the present invention will be described specifically with reference to examples. First, SrTiO ₃ as a raw material, Nb ₂ O _{5 as} a valence controlling agent, and Na ₂ SiO ₃ for improving the temperature coefficient of varistor voltage were weighed and mixed so as to have a composition ratio shown in the following table. After drying, this was ground in an automatic mortar. Thereafter, a 0.5 wt% polyvinyl alcohol solution was added, mixed for 1 hour, and granulated. After granulation,
Formed into a 12φ × 1.0 (mm) disc with a pressure of 1ton / cm ² ,
Next, the binder was removed in air at 400 ° C. for 2 hours. Then, in a reducing atmosphere of N ₂ : H ₂ = 10: 1, 1200-1500
Calcination was carried out at ℃ for 2 hours. The first obtained in this way
1. Heat treatment was performed on the sintered body 1 shown in FIG. 2 in air at 900 to 1200 ° C. for 2 hours, and thereafter, electrodes 2 and 3 were formed while leaving the outer periphery.

The sintered body thus obtained, which was fired at 1400 ° C. for 2 hours in a reducing atmosphere of N ₂ : H ₂ = 10: 1, was placed in air.
Heat treatment at 900-1200 ° C for 2 hours, heat treatment temperature of the capacitive varistor formed by applying In-Ga electrode is 900,
The values of the temperature coefficient of the varistor voltage when the temperature is changed to 1000, 1100, and 1200 ° C are also shown in the following table. Here, the value of the temperature coefficient of the varistor voltage is the varistor voltage V at the measurement temperature of 20, 80 ° C.
Calculated from the following formula from the change rate of _{0.1 mA} value First, when the above table is explained, sample numbers 1 to 3 are comparative examples. In these samples, the temperature coefficient of the varistor voltage becomes a negative value, and the value of the varistor voltage decreases as the measurement temperature increases, so that the effect of the additive can be obtained. On the other hand, sample No. 4 according to the other examples of the present invention
In the case of 1414, the temperature coefficient of the varistor voltage becomes positive or 0, and the value of the varistor voltage does not decrease even if the measurement temperature increases, and the effect of the additive can be obtained.

Here, the addition amount of Na ₂ SiO ₃ is 0.2 to 5.
The reason for defining the range of 0 mol% is that if the content is less than 0.2 mol%, the effect of addition cannot be obtained, and if the content exceeds 5.0 mol%, the sinterability and reliability are reduced, so that the function as a capacitive varistor is not achieved. . Also, the heat treatment temperature is specified in the range of 900 to 1200 ° C. If the temperature is lower than 900 ° C, it is not uniformly oxidized even to the inside of the element, the oxygen concentration gradient is exhibited, and the temperature coefficient of the varistor voltage shows a negative value. This is because directionality is generated, and when the temperature exceeds 1200 ° C., the varistor voltage increases, the varistor characteristics take precedence, the capacitor characteristics decrease, and the balance between the two characteristics is lost, so that the function as a capacitive varistor cannot be achieved. In the examples of the present invention, some combinations are shown, but it has been confirmed that other combinations have similar effects. Further, in the embodiment of the present invention, the case where the baking is performed in a reducing atmosphere has been described. However, the baking may be performed in a nitrogen atmosphere. However, when sintering is performed in a nitrogen atmosphere, there is a surface where it is difficult to turn into a semiconductor. Therefore, the temperature is slightly higher (1400 to 1500 ° C.) than when sintering is performed in a reducing atmosphere.
Baking on the side is preferable in terms of characteristics.

Furthermore, in the above embodiment, both sides of the heat-treated element
In-Ga was applied, electrodes were formed, and the electrical characteristics were measured.
Print conductive paste such as Ag paste, 500 ~ 900 ℃
The electrode may be formed by baking in the temperature range described above, or may be formed by a method such as vapor deposition, sputtering, or plating.

The thus obtained device of the present embodiment has a positive or zero temperature coefficient of the varistor voltage, and can suppress a decrease in the varistor voltage even when used at a high temperature or for a long time. , The temperature characteristics, reliability and life characteristics are improved.

Effects of the Invention As described above, according to the present invention, in a capacitive varistor containing SrTiO ₃ as a main component, the temperature coefficient of the varistor voltage shows a positive or zero value, and the directionality of the varistor voltage is suppressed. Therefore, the effect of improving temperature characteristics, reliability, and life characteristics can be obtained.

Compared to conventional capacitive varistors, the temperature coefficient of the varistor voltage shows a positive or zero value, preventing the varistor voltage from dropping even when used at high temperatures or for a long time, and prevents short-circuits and increases in the effective limiting voltage. Further, since the directionality of the varistor voltage is suppressed, the temperature characteristics, reliability, and life characteristics can be improved.

Therefore, according to the present invention, an element capable of protecting semiconductors and circuits from noise and static electricity having excellent temperature characteristics, reliability and life characteristics can be obtained, and the practical effect thereof is extremely large.

[Brief description of the drawings]

FIG. 1 is a top view showing a voltage-dependent nonlinear resistor element according to an embodiment of the present invention, and FIG. 2 is a sectional view of the element. 1 ... Sintered body, 2,3 ... Electrode.

Claims (2)

(57) [Claims] 1. A voltage-dependent non-linear resistance comprising 0.2 to 5.0 mol% of Na ₂ SiO ₃ in an oxide having a perovskite structure mainly composed of Sr and Ti atoms, which is made into a semiconductor by valence control. Body element. 2. A powder of SrTiO ₃ is used as a raw material, and an appropriate amount of a valence controlling agent such as Nb or Ta is added. Further, Na ₂ SiO ₃ is added in an amount of 0.2 to 5.0 mol%.
The added mixed powder is molded, fired in a reducing atmosphere or a nitrogen atmosphere at a temperature range of 1200 to 1500 ° C., and then heat-treated in a temperature range of 900 to 1200 ° C. in an air. A method for manufacturing a voltage-dependent nonlinear resistor element provided with: