JP2808777B2 - Varistor manufacturing method - Google Patents
Varistor manufacturing methodInfo
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- JP2808777B2 JP2808777B2 JP2013839A JP1383990A JP2808777B2 JP 2808777 B2 JP2808777 B2 JP 2808777B2 JP 2013839 A JP2013839 A JP 2013839A JP 1383990 A JP1383990 A JP 1383990A JP 2808777 B2 JP2808777 B2 JP 2808777B2
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Description
【発明の詳細な説明】 産業上の利用分野 本発明は電気機器、電子機器で発生する異常高電圧、
ノイズ、静電気などから機器の半導体および回路を保護
するためのコンデンサ特性とバリスタ特性を有するバリ
スタの製造方法に関するものである。The present invention relates to an electric device, an abnormal high voltage generated in an electronic device,
The present invention relates to a method for manufacturing a varistor having a capacitor characteristic and a varistor characteristic for protecting a semiconductor and a circuit of a device from noise, static electricity, and the like.
従来の技術 従来、各種の電気機器、電子機器における異常高電圧
の吸収、ノイズの除去、火花消去、静電気対策のために
電圧依存性非直線抵抗特性を有するSiCバリスタや、ZnO
系バリスタなどが使用されている。このようなバリスタ
の電圧−電流特性は近似的に次式のように表すことがで
きる。Conventional technology Conventionally, SiC varistors with voltage-dependent non-linear resistance characteristics, such as absorption of abnormal high voltage, noise elimination, spark extinction, and static electricity countermeasures in various electric and electronic devices, and ZnO
System varistors are used. The voltage-current characteristics of such a varistor can be approximately expressed by the following equation.
Ｉ＝（V/C）α ここで、Ｉは電流、Ｖは電圧、Ｃはバリスタ固有の定
数、αは電圧−電流非直線指数である。I = (V / C) α where I is current, V is voltage, C is a varistor-specific constant, and α is voltage-current nonlinear exponent.
SiCバリスタのαは２〜７程度、ZnO系バリスタではα
が50にもおよぶものがある。このようなバリスタは比較
的高い電圧の吸収には優れた性能を有しているが、誘電
率が低く、固有の静電容量が小さいため、バリスタ電圧
以下の比較的低い電圧の吸収にほとんど効果を示さず、
また誘電損失tanδが５〜10％と大きい。Α of the SiC varistor is about 2 to 7, and α of the ZnO varistor.
There are as many as 50. Such varistors have excellent performance in absorbing relatively high voltages, but have a low dielectric constant and a small inherent capacitance, so they are almost effective in absorbing relatively low voltages below the varistor voltage. Does not indicate
The dielectric loss tan δ is as large as 5 to 10%.
一方、これらの低電圧のノイズなどの除去には見かけ
の誘電率が５×104程度で、tanδが１％前後の半導体コ
ンデンサが利用されている。しかし、このような半導体
コンデンサはサージなどによりある程度以上の電圧また
は電流が印加されると、静電容量が減少したり破壊した
りしてコンデンサとしての機能を果たさなくなったりす
る。On the other hand, a semiconductor capacitor having an apparent dielectric constant of about 5 × 10 4 and a tan δ of about 1% is used for removing these low-voltage noises and the like. However, when a voltage or current exceeding a certain level is applied to such a semiconductor capacitor due to a surge or the like, the capacitance is reduced or destroyed, so that the function as a capacitor is not achieved.
そこで最近になってSrTiO3を主成分とし、バリスタ特
性とコンデンサ特性の両方の機能を有するものが開発さ
れ、コンピュータなどの電子機器におけるIC,LSIなどの
半導体素子の保護に利用されている。In recent years, a device having SrTiO 3 as a main component and having both functions of a varistor characteristic and a capacitor characteristic has been developed, and is used for protecting semiconductor elements such as ICs and LSIs in electronic devices such as computers.
発明が解決しようとする課題 上記のSrTiO3を主成分とするバリスタとコンデンサの
両方の機能を有する素子は、ZnO系バリスタに比べ誘電
率が約10倍と大きいが、αやサージ耐量が小さく、バリ
スタ電圧を低くすると特性が劣化しやすいといった欠点
を有していた。Problems to be Solved by the Invention An element having both functions of a varistor and a capacitor mainly composed of SrTiO 3 as described above has a dielectric constant of about 10 times as large as that of a ZnO-based varistor, but has a small α and a surge withstand capacity, If the varistor voltage is reduced, the characteristics are liable to deteriorate.
そこで本発明では、誘電率が大きく、バリスタ電圧が
低く、αが大きいと共にサージ耐量が大きいバリスタの
製造方法を提供することを目的とするものである。Therefore, an object of the present invention is to provide a method of manufacturing a varistor having a large dielectric constant, a low varistor voltage, a large α and a large surge withstand capability.
課題を解決するための手段 そしてこの目的を達成するために本発明は、Sr1-xBax
TiO3（0.001≦ｘ≦0.300）を90.000〜99.998mol％,Nb2O
5,Ta2O5,WO3,Dy2O3,Y2O3,La2O3,CeO2,Sm2O3,Pr6O11,Nd2
O3のうち少なくとも１種類以上を0.001〜5.000mol％,Al
2O3,Sb2O3,BaO,BeO,PbO,B2O3,Cr2O3,Fe2O3,CdO,K2O,Ca
O,Co2O3,CuO,Cu2O,Li2O,LiF,MgO,MnO2,MoO3,Na2O,NaF,N
iO,Rh2O3,SeO2,Ag2O,SiO2,SiC,SrO,Tl2O3,ThO2,TiO2,V2
O5,Bi2O3,ZnO,ZrO2,SnO2のうち少なくとも１種類以上を
0.001〜5.000mol％含有してなる主成分100重量部と、Mg
TiO360.000〜32.500mol％,SiO240.000〜67.5mol％から
なる混合物を1200℃以上で焼成してなる添加物0.001〜1
0.000重量部とからなる組成物を、1100℃以上で焼成し
たものである。Means for Solving the Problems And to achieve this object, the present invention provides Sr 1-x Ba x
90.000-99.998 mol% of TiO 3 (0.001 ≦ x ≦ 0.300), Nb 2 O
5, Ta 2 O 5, WO 3, Dy 2 O 3, Y 2 O 3, La 2 O 3, CeO 2, Sm 2 O 3, Pr 6 O 11, Nd 2
0.001 to 5.000 mol% of at least one of O 3 , Al
2 O 3 , Sb 2 O 3 , BaO, BeO, PbO, B 2 O 3 , Cr 2 O 3 , Fe 2 O 3 , CdO, K 2 O, Ca
O, Co 2 O 3 , CuO, Cu 2 O, Li 2 O, LiF, MgO, MnO 2 , MoO 3 , Na 2 O, NaF, N
iO, Rh 2 O 3 , SeO 2 , Ag 2 O, SiO 2 , SiC, SrO, Tl 2 O 3 , ThO 2 , TiO 2 , V 2
O 5 , Bi 2 O 3 , ZnO, ZrO 2 , SnO 2
100 parts by weight of a main component containing 0.001 to 5.000 mol%, and Mg
Additives obtained by firing a mixture consisting of TiO 3 60.000 to 32.500 mol% and SiO 2 40.000 to 67.5 mol% at 1200 ° C. or higher.
The composition consisting of 0.000 parts by weight was fired at 1100 ° C. or higher.
作用 上記の発明において、第１成分は主たる成分であり、
SrTiO3のSrの一部をBaで置換することにより、粒界に形
成される高抵抗層がサージに対して強くなる。第２成分
は主に第１成分の半導体化を促進する金属酸化物であ
る。また、第３成分は誘電率、α、サージ耐量の改善に
寄与するものであり、第４成分はバリスタ電圧の低下、
誘電率の改善に有効なものである。特に、第４成分は融
点が1230〜1250℃と比較的低いため、融点前後の温度で
焼成すると液相となり、その他の成分の反応を促進する
と共に粒子の成長を促進する。そのため粒界部分に第３
成分が偏析しやすくなり、粒界が高抵抗化されやすくな
ることから、バリスタ機能およびコンデンサ機能が改善
される。また、粒成長が促進されるためバリスタ電圧が
低くなり、粒径の均一性が向上するため特性の安定性が
良くなり、特にサージ耐量が改善されることとなる。Action In the above invention, the first component is a main component,
By substituting a part of Sr of SrTiO 3 with Ba, the high resistance layer formed at the grain boundary becomes strong against surge. The second component is a metal oxide mainly promoting the conversion of the first component into a semiconductor. The third component contributes to the improvement of the dielectric constant, α, and surge withstand capability, and the fourth component reduces the varistor voltage,
This is effective for improving the dielectric constant. In particular, since the fourth component has a relatively low melting point of 1230 to 1250 ° C., when it is fired at a temperature around the melting point, it becomes a liquid phase and promotes the reaction of other components and the growth of particles. Therefore, the third
Since the components are easily segregated and the grain boundaries are easily made to have high resistance, the varistor function and the capacitor function are improved. Further, since the grain growth is promoted, the varistor voltage is lowered, and the uniformity of the grain size is improved, so that the stability of the characteristics is improved, and in particular, the surge withstand capability is improved.
実施例 以下に、本発明を実施例を挙げて具体的に説明する。Examples Hereinafter, the present invention will be described specifically with reference to examples.
MgTiO3,SiO2を下記の第１表に示すように組成比を種
々変えて秤量し、ボールミルなどで20Hr混合する。次
に、乾燥した後、下記の第１表に示すように温度を種々
変えて焼成し、再びボールミルなどで20Hr粉砕した後、
乾燥し、第４成分とする。次いで、第１成分、第２成
分、第３成分、第４成分を下記の第１表に示した組成比
になるように秤量し、ボールミルなどで24Hr混合した
後、乾燥し、ポリビニルアルコールなどの有機バインダ
ーを10wt％添加して造粒した後、１（t/cm2）のプレス
圧力で10φ×1t（mm）の円板状に成形し、1000℃で10Hr
焼成し脱バインダーする。次に、第１表に示したように
温度を時間を種々変えて焼成（第１焼成）し、その後還
元性雰囲気、例えばN2:H2＝9:1のガス中で温度と時間を
種々変えて焼成（第２焼成）する。さらにその後、酸化
性雰囲気中で温度と時間を種々変えて焼成（第３焼成）
する。MgTiO 3 and SiO 2 are weighed at various composition ratios as shown in Table 1 below, and mixed for 20 hours by a ball mill or the like. Next, after drying, baking was carried out at various temperatures as shown in Table 1 below, and again crushed by a ball mill or the like for 20 hours.
Dry to make the fourth component. Next, the first component, the second component, the third component, and the fourth component are weighed so as to have the composition ratios shown in Table 1 below, mixed for 24 hours using a ball mill or the like, dried, and dried with polyvinyl alcohol or the like. After adding 10 wt% of organic binder and granulating, it is formed into a 10φ × 1 t (mm) disk at a press pressure of 1 (t / cm 2 ) and 10 hours at 1000 ° C.
Baking and debinding. Next, as shown in Table 1, calcination is performed by changing the temperature at various times (first calcination), and then the temperature and the time are variously changed in a reducing atmosphere, for example, a gas of N 2 : H 2 = 9: 1. The firing is changed (second firing). Further, thereafter, firing is performed in an oxidizing atmosphere by changing the temperature and time in various ways (third firing).
I do.
こうして得られた第１図および第２図に示す焼結体１
の両平面に外周を残すようにしてAgなどの導電性ペース
トをスクリーン印刷などにより塗布し、600℃,5minで焼
成し、電極２、３を形成する。次に、図示してはいない
が半田などによりリード線を取付け、エポキシなどの樹
脂を塗装する。このようにして得られた素子の特性を下
記の第２表に示す。The sintered body 1 thus obtained shown in FIGS. 1 and 2
A conductive paste such as Ag is applied by screen printing or the like so as to leave the outer periphery on both planes, and baked at 600 ° C. for 5 minutes to form electrodes 2 and 3. Next, although not shown, a lead wire is attached with solder or the like, and a resin such as epoxy is coated. The characteristics of the device thus obtained are shown in Table 2 below.
なお、誘電率は1KHzでの静電容量から計算したもので
あり、αは α＝1/Log（V10mA/V1mA） （ただし、V1mA、V10mAは1mA、10mAの電流を流した時に
素子の両端にかかる電圧である。）で評価した。また、
サージ耐量はパルス性の電流を印加した後のV1mAの変化
率が±10％以内である時の最大のパルス性電流値により
評価している。The dielectric constant is calculated from the capacitance at 1 KHz. Α is 1 / Log ( V10mA / V1mA ) (However, V1mA and V10mA are 1mA and 10mA This is the voltage applied to both ends of the device.). Also,
The surge withstand capability is evaluated by the maximum pulse current value when the rate of change of V1mA after application of the pulse current is within ± 10%.
また、本発明において第１成分のSr1-BaxTiO3のｘの
範囲を規定したのは、ｘが0.001よりも小さいと効果を
示さず、一方0.300を超えると格子欠陥が発生しにくく
なるため半導体化が促進されず、粒界にBaが単一相とし
て析出するため、組織が不均一になり、V1mAが高くなり
すぎて特性が劣化するためである。さらに、第２成分は
0.001mol％未満では効果を示さず、5.000mol％を超える
と粒界に偏析して粒界の高抵抗化を抑制し、粒界に第２
相を形成するため特性が劣化するものである。また、第
３成分は0.001mol％未満では効果を示さず、5.000mol％
を超えると粒界に偏析して第２相を形成するため特性が
劣化するものである。そして、第４成分はMgTiO3とSiO2
の２成分系の相図のなかで最も融点の低い領域の物質で
あり、その範囲外では融点が高くなるものである。ま
た、第４成分の添加量は、0.001重量部未満では効果を
示さず、10.000重量部を超えると粒界の抵抗は高くなる
が粒界の幅が厚くなるため、静電容量が小さくなると共
にV1mAが高くなり、サージに対して弱くなるものであ
る。さらに、第４成分の焼成温度を規定したのは、低融
点の第４成分が合成される温度が1200℃以上であるため
である。また、第１焼成の温度を規定したのは、第４成
分の融点が1230〜1250℃であるため、1100℃以上の温度
で焼成すると第４成分が液相に近い状態になって焼結が
促進されるためであり、1100℃未満では第４成分の液相
焼結効果がないためである。また、第２焼成の温度を規
定したのは、1200℃未満では第１焼成後の焼結体が十分
に還元されず、バリスタ特性、コンデンサ特性共に劣化
するためである。さらに、第３焼成の温度を規定したの
は、900℃未満では粒界の高抵抗化が十分に進まないた
め、V1mAが低くなりすぎバリスタ特性が劣化するためで
あり、1300℃を超えると静電容量が小さくなりすぎコン
デンサ特性が劣化するためである。また、第１焼成の雰
囲気は酸化性雰囲気でも還元性雰囲気でも同様の効果が
あることを確認した。 Further, in the present invention, the range of x of the first component Sr 1 -Ba x TiO 3 is specified because when x is smaller than 0.001, no effect is exhibited, and when x exceeds 0.300, lattice defects are less likely to occur. Therefore, the formation of a semiconductor is not promoted, and Ba precipitates as a single phase at the grain boundary, resulting in a non-uniform structure and an excessively high V1mA , deteriorating the characteristics. Further, the second component is
If the content is less than 0.001 mol%, no effect is exhibited. If the content exceeds 5.000 mol%, segregation at the grain boundaries suppresses the increase in resistance of the grain boundaries, and the second
Since the phase is formed, the characteristics are deteriorated. In addition, the third component has no effect at less than 0.001 mol%, and has a concentration of 5.000 mol%.
If it exceeds 300, it segregates at the grain boundaries to form the second phase, and the properties are degraded. And the fourth component is MgTiO 3 and SiO 2
In the two-component phase diagram, the substance has the lowest melting point, and outside the range, the melting point is high. When the amount of the fourth component is less than 0.001 part by weight, no effect is exhibited. When the amount exceeds 10.000 parts by weight, the resistance of the grain boundary is increased, but the width of the grain boundary is increased, so that the capacitance is reduced. V 1mA increases and becomes weak against surge. Further, the reason why the firing temperature of the fourth component is specified is that the temperature at which the fourth component having a low melting point is synthesized is 1200 ° C. or higher. In addition, the temperature of the first firing is specified because the melting point of the fourth component is 1230 to 1250 ° C, and when firing at a temperature of 1100 ° C or higher, the fourth component is in a state close to a liquid phase and sintering is performed. If the temperature is lower than 1100 ° C., there is no liquid phase sintering effect of the fourth component. The reason why the temperature for the second firing is specified is that if the temperature is lower than 1200 ° C., the sintered body after the first firing is not sufficiently reduced, and both the varistor characteristics and the capacitor characteristics deteriorate. Furthermore, the reason why the third firing temperature is specified is that if the temperature is lower than 900 ° C., the resistance of the grain boundary does not sufficiently increase, so that V 1 mA becomes too low and the varistor characteristics deteriorate. This is because the capacitance becomes too small and the capacitor characteristics deteriorate. It was also confirmed that the same effect was obtained regardless of whether the atmosphere for the first firing was an oxidizing atmosphere or a reducing atmosphere.
なお、本実施例では添加物の組み合わせについては、
第１成分としてSr1-xBaxTiO3（0.001≦ｘ≦0.300）、第
２成分としてNb2O5,Ta2O5,WO3,Dy2O3,Y2O3,La2O3,Ce
O2、第３成分としてAl2O3,PbO,Cr2O3,CdO,K2O,Co2O3,Cu
O,Cu2O,MnO2,MoO3,NiO,Ag2O,SiC2,Tl2O3,ZnO,ZrO2、第
４成分としてMgTiO3,SiO2についてのみ示したが、その
他に第２成分としてSm2O3,Pr6O11,Nd2O3、第３成分とし
てSb2O3,BaO,BeO,B2O3,Fe2O3,CaO,Li2O,LiF,MgO,Na2O,N
aF,Rh2O3,SeO2,SiO2,SrO,ThO2,TiO2,V2O5,Bi2O3,SnO2を
用いた組成の組み合わせでも同様の効果が得られること
を確認した。また、第１成分、第２成分、第３成分、第
４成分を第１焼成しただけでもバリスタ電圧が低く、誘
電率εを大きくするのに効果があることを確認した。In this example, the combination of additives is
Sr 1-x Ba x TiO 3 (0.001 ≦ x ≦ 0.300) as the first component, Nb 2 O 5 , Ta 2 O 5 , WO 3 , Dy 2 O 3 , Y 2 O 3 , La 2 O as the second component 3 , Ce
O 2 , Al 2 O 3 , PbO, Cr 2 O 3 , CdO, K 2 O, Co 2 O 3 , Cu as the third component
Only O, Cu 2 O, MnO 2 , MoO 3 , NiO, Ag 2 O, SiC 2 , Tl 2 O 3 , ZnO, ZrO 2 , and MgTiO 3 and SiO 2 as the fourth component are shown. Sm 2 O 3 , Pr 6 O 11 , Nd 2 O 3 as a component, Sb 2 O 3 , BaO, BeO, B 2 O 3 , Fe 2 O 3 , CaO, Li 2 O, LiF, MgO, as a third component Na 2 O, N
It has been confirmed that the same effect can be obtained even with the combination of compositions using aF, Rh 2 O 3 , SeO 2 , SiO 2 , SrO, ThO 2 , TiO 2 , V 2 O 5 , Bi 2 O 3 , SnO 2 . In addition, it was confirmed that the varistor voltage was low even if the first, second, third, and fourth components were simply baked for the first time, which was effective in increasing the dielectric constant ε.
発明の効果 以上に示したように本発明によれば、粒子径が大きい
ためバリスタ電圧が低く、誘電率εおよびαが大きく、
粒子径のばらつきが小さいためサージ電流が素子に均一
に流れ、またBaによって粒界が効果的に高抵抗化される
ため、サージ耐量が大きくなるという効果が得られる。Effects of the Invention As described above, according to the present invention, the particle diameter is large, the varistor voltage is low, the dielectric constants ε and α are large,
Since the variation in the particle diameter is small, the surge current flows uniformly in the element, and the grain boundary is effectively increased in resistance by Ba, so that the effect of increasing the surge withstand is obtained.
第１図は本発明による素子を示す上面図、第２図は本発
明による素子を示す断面図である。 １……焼結体、２、３……電極。FIG. 1 is a top view showing the device according to the present invention, and FIG. 2 is a cross-sectional view showing the device according to the present invention. 1 ... sintered body, 2, 3 ... electrode.
Claims (2)
00〜99.998mol％,Nb2O5,Ta2O5,WO3,Dy2O3,Y2O3,La2O3,C
eO2,Sm2O3,Pr6O11,Nd2O3のうち少なくとも１種類以上を
0.001〜5.000mol％,Al2O3,Sb2O3,BaO,BeO,PbO,B2O3,Cr2
O3,Fe2O3,CdO,K2O,CaO,Co2O3,CuO,Cu2O,Li2O,LiF,MgO,M
nO2,MoO3,Na2O,NaF,NiO,Rh2O3,SeO2,Ag2O,SiO2,SiC,Sr
O,Tl2O3,ThO2,TiO2,V2O5,Bi2O3,ZnO,ZrO2,SnO2のうち少
なくとも１種類以上を0.001〜5.000mol％含有してなる
主成分100重量部と、MgTiO360.000〜32.500mol％,SiO24
0.000〜67.5mol％からなる混合物を1200℃以上で焼成し
てなる添加物0.001〜10.000重量部とからなる組成物
を、1100℃以上で焼成したことを特徴とするバリスタの
製造方法。(1) Sr 1-x Ba x TiO 3 (0.001 ≦ x ≦ 0.300) is converted to 90.0%
00~99.998mol%, Nb 2 O 5, Ta 2 O 5, WO 3, Dy 2 O 3, Y 2 O 3, La 2 O 3, C
eO 2 , Sm 2 O 3 , Pr 6 O 11 , Nd 2 O 3
0.001 to 5.000 mol%, Al 2 O 3 , Sb 2 O 3 , BaO, BeO, PbO, B 2 O 3 , Cr 2
O 3 , Fe 2 O 3 , CdO, K 2 O, CaO, Co 2 O 3 , CuO, Cu 2 O, Li 2 O, LiF, MgO, M
nO 2 , MoO 3 , Na 2 O, NaF, NiO, Rh 2 O 3 , SeO 2 , Ag 2 O, SiO 2 , SiC, Sr
O, Tl 2 O 3 , ThO 2 , TiO 2 , V 2 O 5 , Bi 2 O 3 , ZnO, ZrO 2 , SnO 2 100% by weight of a main component containing 0.001 to 5.000 mol% of at least one kind or more. Part and MgTiO 3 60.000-32.500mol%, SiO 2 4
A method for producing a varistor, characterized in that a composition comprising 0.001 to 10.000 parts by weight of an additive obtained by firing a mixture of 0.000 to 67.5 mol% at 1200 ° C or higher is fired at 1100 ° C or higher.
00〜99.998mol％,Nb2O5,Ta2O5,WO3,Dy2O3,Y2O3,La2O3,C
eO2,Sm2O3,Pr6O11,Nd2O3のうち少なくとも１種類以上を
0.001〜5.000mol％,Al2O3,Sb2O3,BaO,BeO,PbO,B2O3,Cr2
O3,Fe2O3,CdO,K2O,CaO,Co2O3,CuO,Cu2O,Li2O,LiF,MgO,M
nO2,MoO3,Na2O,NaF,NiO,Rh2O3,SeO2,Ag2O,SiO2,SiC,Sr
O,Tl2O3,ThO2,TiO2,V2O5,Bi2O3,ZnO,ZrO2,SnO2のうち少
なくとも１種類以上を0.001〜5.000mol％含有してなる
主成分100重量部と、MgTiO360.000〜32.500mol％,SiO24
0.000〜67.5mol％からなる混合物を1200℃以上で焼成し
てなる添加物0.001〜10.000重量部とからなる組成物
を、1100℃以上で焼成した後、還元性雰囲気中で1200℃
以上で焼成し、その後酸化性雰囲気中で900〜1300℃で
焼成したことを特徴とするバリスタの製造方法。2. The method according to claim 1, wherein Sr 1-x Ba x TiO 3 (0.001 ≦ x ≦ 0.300) is converted to 90.0%.
00~99.998mol%, Nb 2 O 5, Ta 2 O 5, WO 3, Dy 2 O 3, Y 2 O 3, La 2 O 3, C
eO 2 , Sm 2 O 3 , Pr 6 O 11 , Nd 2 O 3
0.001 to 5.000 mol%, Al 2 O 3 , Sb 2 O 3 , BaO, BeO, PbO, B 2 O 3 , Cr 2
O 3 , Fe 2 O 3 , CdO, K 2 O, CaO, Co 2 O 3 , CuO, Cu 2 O, Li 2 O, LiF, MgO, M
nO 2 , MoO 3 , Na 2 O, NaF, NiO, Rh 2 O 3 , SeO 2 , Ag 2 O, SiO 2 , SiC, Sr
O, Tl 2 O 3 , ThO 2 , TiO 2 , V 2 O 5 , Bi 2 O 3 , ZnO, ZrO 2 , SnO 2 100% by weight of a main component containing 0.001 to 5.000 mol% of at least one kind or more. Part and MgTiO 3 60.000-32.500mol%, SiO 2 4
A composition comprising 0.001 to 10.000 parts by weight of an additive obtained by calcining a mixture consisting of 0.000 to 67.5 mol% at 1200 ° C. or more, and calcining at 1100 ° C. or more, and then 1200 ° C. in a reducing atmosphere.
A method for manufacturing a varistor, wherein the varistor is fired at a temperature of 900 to 1300 ° C. in an oxidizing atmosphere.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2013839A JP2808777B2 (en) | 1990-01-24 | 1990-01-24 | Varistor manufacturing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2013839A JP2808777B2 (en) | 1990-01-24 | 1990-01-24 | Varistor manufacturing method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH03218601A JPH03218601A (en) | 1991-09-26 |
| JP2808777B2 true JP2808777B2 (en) | 1998-10-08 |
Family
ID=11844449
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2013839A Expired - Fee Related JP2808777B2 (en) | 1990-01-24 | 1990-01-24 | Varistor manufacturing method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2808777B2 (en) |
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| CN112830775B (en) * | 2021-03-01 | 2023-06-23 | 南宁国人射频通信有限公司 | Low-dielectric-constant microwave dielectric ceramic and preparation method thereof |
| CN115304367B (en) * | 2022-07-21 | 2023-03-28 | 苏州市职业大学 | Preparation method and product of microwave dielectric ceramic |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS625611A (en) * | 1985-07-02 | 1987-01-12 | 松下電器産業株式会社 | Voltage depending non-linear resistor ceramic composition |
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1990
- 1990-01-24 JP JP2013839A patent/JP2808777B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH03218601A (en) | 1991-09-26 |
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