JPH0524662B2 - - Google Patents

Info

Publication number
JPH0524662B2
JPH0524662B2 JP57030003A JP3000382A JPH0524662B2 JP H0524662 B2 JPH0524662 B2 JP H0524662B2 JP 57030003 A JP57030003 A JP 57030003A JP 3000382 A JP3000382 A JP 3000382A JP H0524662 B2 JPH0524662 B2 JP H0524662B2
Authority
JP
Japan
Prior art keywords
semiconductor layer
semiconductor
layer
semiconductor device
field effect
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP57030003A
Other languages
English (en)
Japanese (ja)
Other versions
JPS58147166A (ja
Inventor
Kazukyo Tsunenobu
Takashi Mimura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP57030003A priority Critical patent/JPS58147166A/ja
Publication of JPS58147166A publication Critical patent/JPS58147166A/ja
Publication of JPH0524662B2 publication Critical patent/JPH0524662B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having 2D charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/473—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having confinement of carriers by multiple heterojunctions, e.g. quantum well HEMT
    • H10D30/4732—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having confinement of carriers by multiple heterojunctions, e.g. quantum well HEMT using Group III-V semiconductor material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes
    • H10D30/87—FETs having Schottky gate electrodes, e.g. metal-semiconductor FETs [MESFET]

Landscapes

  • Junction Field-Effect Transistors (AREA)
  • Bipolar Transistors (AREA)
JP57030003A 1982-02-26 1982-02-26 半導体装置 Granted JPS58147166A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57030003A JPS58147166A (ja) 1982-02-26 1982-02-26 半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57030003A JPS58147166A (ja) 1982-02-26 1982-02-26 半導体装置

Publications (2)

Publication Number Publication Date
JPS58147166A JPS58147166A (ja) 1983-09-01
JPH0524662B2 true JPH0524662B2 (OSRAM) 1993-04-08

Family

ID=12291719

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57030003A Granted JPS58147166A (ja) 1982-02-26 1982-02-26 半導体装置

Country Status (1)

Country Link
JP (1) JPS58147166A (OSRAM)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4745447A (en) * 1985-06-14 1988-05-17 American Telephone And Telegraph Company, At&T Bell Laboratories Gallium arsenide on gallium indium arsenide Schottky barrier device

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2913068A1 (de) * 1979-04-02 1980-10-23 Max Planck Gesellschaft Heterostruktur-halbleiterkoerper und verwendung hierfuer
JPS5713773A (en) * 1980-06-27 1982-01-23 Fujitsu Ltd Semiconductor device

Also Published As

Publication number Publication date
JPS58147166A (ja) 1983-09-01

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