JPS58147166A - 半導体装置 - Google Patents

半導体装置

Info

Publication number
JPS58147166A
JPS58147166A JP57030003A JP3000382A JPS58147166A JP S58147166 A JPS58147166 A JP S58147166A JP 57030003 A JP57030003 A JP 57030003A JP 3000382 A JP3000382 A JP 3000382A JP S58147166 A JPS58147166 A JP S58147166A
Authority
JP
Japan
Prior art keywords
layer
gaas
gallium
arsenided
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57030003A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0524662B2 (OSRAM
Inventor
Kazukiyo Tsunenobu
和清 常信
Takashi Mimura
高志 三村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP57030003A priority Critical patent/JPS58147166A/ja
Publication of JPS58147166A publication Critical patent/JPS58147166A/ja
Publication of JPH0524662B2 publication Critical patent/JPH0524662B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having 2D charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/473—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having confinement of carriers by multiple heterojunctions, e.g. quantum well HEMT
    • H10D30/4732—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having confinement of carriers by multiple heterojunctions, e.g. quantum well HEMT using Group III-V semiconductor material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes
    • H10D30/87—FETs having Schottky gate electrodes, e.g. metal-semiconductor FETs [MESFET]

Landscapes

  • Junction Field-Effect Transistors (AREA)
  • Bipolar Transistors (AREA)
JP57030003A 1982-02-26 1982-02-26 半導体装置 Granted JPS58147166A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57030003A JPS58147166A (ja) 1982-02-26 1982-02-26 半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57030003A JPS58147166A (ja) 1982-02-26 1982-02-26 半導体装置

Publications (2)

Publication Number Publication Date
JPS58147166A true JPS58147166A (ja) 1983-09-01
JPH0524662B2 JPH0524662B2 (OSRAM) 1993-04-08

Family

ID=12291719

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57030003A Granted JPS58147166A (ja) 1982-02-26 1982-02-26 半導体装置

Country Status (1)

Country Link
JP (1) JPS58147166A (OSRAM)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4745447A (en) * 1985-06-14 1988-05-17 American Telephone And Telegraph Company, At&T Bell Laboratories Gallium arsenide on gallium indium arsenide Schottky barrier device

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55132074A (en) * 1979-04-02 1980-10-14 Max Planck Gesellschaft Hetero semiconductor and method of using same
JPS5713773A (en) * 1980-06-27 1982-01-23 Fujitsu Ltd Semiconductor device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55132074A (en) * 1979-04-02 1980-10-14 Max Planck Gesellschaft Hetero semiconductor and method of using same
JPS5713773A (en) * 1980-06-27 1982-01-23 Fujitsu Ltd Semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4745447A (en) * 1985-06-14 1988-05-17 American Telephone And Telegraph Company, At&T Bell Laboratories Gallium arsenide on gallium indium arsenide Schottky barrier device

Also Published As

Publication number Publication date
JPH0524662B2 (OSRAM) 1993-04-08

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