JPH0524600B2 - - Google Patents
Info
- Publication number
- JPH0524600B2 JPH0524600B2 JP60025455A JP2545585A JPH0524600B2 JP H0524600 B2 JPH0524600 B2 JP H0524600B2 JP 60025455 A JP60025455 A JP 60025455A JP 2545585 A JP2545585 A JP 2545585A JP H0524600 B2 JPH0524600 B2 JP H0524600B2
- Authority
- JP
- Japan
- Prior art keywords
- cell
- cells
- memory cell
- test
- written
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Landscapes
- Read Only Memory (AREA)
- For Increasing The Reliability Of Semiconductor Memories (AREA)
- Techniques For Improving Reliability Of Storages (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP60025455A JPS61184799A (ja) | 1985-02-13 | 1985-02-13 | プログラマブル・リ−ド・オンリ−・メモリ |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP60025455A JPS61184799A (ja) | 1985-02-13 | 1985-02-13 | プログラマブル・リ−ド・オンリ−・メモリ |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS61184799A JPS61184799A (ja) | 1986-08-18 |
JPH0524600B2 true JPH0524600B2 (enrdf_load_stackoverflow) | 1993-04-08 |
Family
ID=12166499
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP60025455A Granted JPS61184799A (ja) | 1985-02-13 | 1985-02-13 | プログラマブル・リ−ド・オンリ−・メモリ |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS61184799A (enrdf_load_stackoverflow) |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57117200A (en) * | 1980-11-25 | 1982-07-21 | Raytheon Co | Programmable read only memory circuit and method of testing the same |
JPS57191900A (en) * | 1981-05-22 | 1982-11-25 | Hitachi Ltd | Method for junction destructive prom test |
-
1985
- 1985-02-13 JP JP60025455A patent/JPS61184799A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS61184799A (ja) | 1986-08-18 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US8004873B2 (en) | Resistance change memory device | |
US4365319A (en) | Semiconductor memory device | |
US4392211A (en) | Semiconductor memory device technical field | |
JPS583193A (ja) | 電気的にプログラム可能な読取り専用メモリ | |
JPH0355920B2 (enrdf_load_stackoverflow) | ||
JPH04232693A (ja) | スタティック型半導体記憶装置 | |
US5289409A (en) | Bipolar transistor memory cell and method | |
EP0032015B1 (en) | Field programmable device with test-bits | |
US4320507A (en) | Field programmable device having test provisions for fault detection | |
JPH0156479B2 (enrdf_load_stackoverflow) | ||
JPH01208795A (ja) | 半導体記憶装置 | |
US6373760B1 (en) | Static type semiconductor memory device adopting a redundancy system | |
US4638466A (en) | Programmable semiconductor memory device having separate read word line drivers and write-only word line drivers | |
US10141035B1 (en) | Memory cell with a read selection transistor and a program selection transistor | |
JPH0524600B2 (enrdf_load_stackoverflow) | ||
US11133056B2 (en) | Two-stage signaling for voltage driver coordination in integrated circuit memory devices | |
JPS62132300A (ja) | マトリツクスアレイリ−ドオンリメモリ装置 | |
EP0185156B1 (en) | Random access memory | |
JPH0527199B2 (enrdf_load_stackoverflow) | ||
JP2874935B2 (ja) | 半導体メモリ装置 | |
JP3107615B2 (ja) | 半導体記憶装置 | |
JPS59162699A (ja) | リ−ド・オンリ・メモリ | |
JPS61187200A (ja) | プログラマブル・リ−ド・オンリ−・メモリ | |
JPS58139397A (ja) | 読出専用記憶装置の不良検出回路 | |
JPS60145597A (ja) | プログラマブル・リ−ド・オンリ−・メモリ |