JPH0527199B2 - - Google Patents

Info

Publication number
JPH0527199B2
JPH0527199B2 JP60072140A JP7214085A JPH0527199B2 JP H0527199 B2 JPH0527199 B2 JP H0527199B2 JP 60072140 A JP60072140 A JP 60072140A JP 7214085 A JP7214085 A JP 7214085A JP H0527199 B2 JPH0527199 B2 JP H0527199B2
Authority
JP
Japan
Prior art keywords
memory cell
memory
row
written
test
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP60072140A
Other languages
English (en)
Japanese (ja)
Other versions
JPS61230700A (ja
Inventor
Hajime Masuda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP60072140A priority Critical patent/JPS61230700A/ja
Publication of JPS61230700A publication Critical patent/JPS61230700A/ja
Publication of JPH0527199B2 publication Critical patent/JPH0527199B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • For Increasing The Reliability Of Semiconductor Memories (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)
  • Read Only Memory (AREA)
JP60072140A 1985-04-05 1985-04-05 プログラマブル・リ−ド・オンリ−・メモリ Granted JPS61230700A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60072140A JPS61230700A (ja) 1985-04-05 1985-04-05 プログラマブル・リ−ド・オンリ−・メモリ

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60072140A JPS61230700A (ja) 1985-04-05 1985-04-05 プログラマブル・リ−ド・オンリ−・メモリ

Publications (2)

Publication Number Publication Date
JPS61230700A JPS61230700A (ja) 1986-10-14
JPH0527199B2 true JPH0527199B2 (enrdf_load_stackoverflow) 1993-04-20

Family

ID=13480680

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60072140A Granted JPS61230700A (ja) 1985-04-05 1985-04-05 プログラマブル・リ−ド・オンリ−・メモリ

Country Status (1)

Country Link
JP (1) JPS61230700A (enrdf_load_stackoverflow)

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5410415A (en) * 1977-06-24 1979-01-26 Ishikawajima Harima Heavy Ind Co Ltd Dripping-proof device for nozzle
JPS6027120B2 (ja) * 1977-11-04 1985-06-27 日本電気株式会社 プログラマブルメモリ
JPS5693189A (en) * 1979-12-18 1981-07-28 Fujitsu Ltd Field programable element
JPS57133599A (en) * 1981-02-12 1982-08-18 Mitsubishi Electric Corp Semiconductor memory device
JPS57191900A (en) * 1981-05-22 1982-11-25 Hitachi Ltd Method for junction destructive prom test
JPS59162699A (ja) * 1983-03-07 1984-09-13 Hitachi Micro Comput Eng Ltd リ−ド・オンリ・メモリ

Also Published As

Publication number Publication date
JPS61230700A (ja) 1986-10-14

Similar Documents

Publication Publication Date Title
US4392211A (en) Semiconductor memory device technical field
US8004873B2 (en) Resistance change memory device
JPS583193A (ja) 電気的にプログラム可能な読取り専用メモリ
US4459694A (en) Field programmable device with circuitry for detecting poor insulation between adjacent word lines
JPS631676B2 (enrdf_load_stackoverflow)
JPH0156479B2 (enrdf_load_stackoverflow)
US4638466A (en) Programmable semiconductor memory device having separate read word line drivers and write-only word line drivers
EP0087360B1 (en) Technique for programming junction-programmable read-only memories
US10141035B1 (en) Memory cell with a read selection transistor and a program selection transistor
EP0059630A2 (en) Field programmable device
JPH0527199B2 (enrdf_load_stackoverflow)
JP2549999B2 (ja) 集積回路メモリ
JPH0524600B2 (enrdf_load_stackoverflow)
US4852058A (en) Semiconductor memory circuit having inspection circuit
EP0185156A2 (en) Random access memory
US3475735A (en) Semiconductor memory
US6958946B2 (en) Memory storage device which regulates sense voltages
JPS60145597A (ja) プログラマブル・リ−ド・オンリ−・メモリ
EP0530623B1 (en) SCR Type memory apparatus
JPS61204898A (ja) プログラム可能な読出し専用半導体記憶装置の検査方法
JPS58139397A (ja) 読出専用記憶装置の不良検出回路
JPS6113320B2 (enrdf_load_stackoverflow)
JPS63107000A (ja) プログラマブル・リ−ド・オンリ−・メモリ
KR830001768B1 (ko) 피일드 프로그램 가능 장치
JPS63300497A (ja) プログラマブルリ−ドオンリ−メモリ