JPH0521983B2 - - Google Patents

Info

Publication number
JPH0521983B2
JPH0521983B2 JP60146528A JP14652885A JPH0521983B2 JP H0521983 B2 JPH0521983 B2 JP H0521983B2 JP 60146528 A JP60146528 A JP 60146528A JP 14652885 A JP14652885 A JP 14652885A JP H0521983 B2 JPH0521983 B2 JP H0521983B2
Authority
JP
Japan
Prior art keywords
magnetic field
gas
film
vacuum chamber
amorphous silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP60146528A
Other languages
English (en)
Japanese (ja)
Other versions
JPS627859A (ja
Inventor
Takeshi Watanabe
Kazufumi Azuma
Masahiro Tanaka
Mitsuo Nakatani
Tadashi Sonobe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP14652885A priority Critical patent/JPS627859A/ja
Publication of JPS627859A publication Critical patent/JPS627859A/ja
Publication of JPH0521983B2 publication Critical patent/JPH0521983B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/24—Deposition of silicon only

Landscapes

  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Photoreceptors In Electrophotography (AREA)
  • Chemical Vapour Deposition (AREA)
JP14652885A 1985-07-05 1985-07-05 アモルフアスシリコン膜の形成方法 Granted JPS627859A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14652885A JPS627859A (ja) 1985-07-05 1985-07-05 アモルフアスシリコン膜の形成方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14652885A JPS627859A (ja) 1985-07-05 1985-07-05 アモルフアスシリコン膜の形成方法

Publications (2)

Publication Number Publication Date
JPS627859A JPS627859A (ja) 1987-01-14
JPH0521983B2 true JPH0521983B2 (enrdf_load_html_response) 1993-03-26

Family

ID=15409681

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14652885A Granted JPS627859A (ja) 1985-07-05 1985-07-05 アモルフアスシリコン膜の形成方法

Country Status (1)

Country Link
JP (1) JPS627859A (enrdf_load_html_response)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4926791A (en) 1987-04-27 1990-05-22 Semiconductor Energy Laboratory Co., Ltd. Microwave plasma apparatus employing helmholtz coils and ioffe bars
JPH0794712B2 (ja) * 1987-05-28 1995-10-11 東京エレクトロン株式会社 プラズマ処理装置
US5125358A (en) * 1988-07-26 1992-06-30 Matsushita Electric Industrial Co., Ltd. Microwave plasma film deposition system
US5180436A (en) * 1988-07-26 1993-01-19 Matsushita Electric Industrial Co., Ltd. Microwave plasma film deposition system
EP0488112B1 (en) * 1990-11-30 1994-08-03 Central Glass Company, Limited Method of forming thin film of amorphous silicon by plasma CVD
US5346792A (en) * 1991-06-11 1994-09-13 Canon Kabushiki Kaisha Color toner
US5204272A (en) * 1991-12-13 1993-04-20 United Solar Systems Corporation Semiconductor device and microwave process for its manufacture

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56155535A (en) * 1980-05-02 1981-12-01 Nippon Telegr & Teleph Corp <Ntt> Film forming device utilizing plasma
JPS60117712A (ja) * 1983-11-30 1985-06-25 Toshiba Corp 薄膜形成方法

Also Published As

Publication number Publication date
JPS627859A (ja) 1987-01-14

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